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author | Hardik Ghaghada | 2014-06-20 15:52:25 +0530 |
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committer | Hardik Ghaghada | 2014-06-20 15:52:25 +0530 |
commit | e1e59ca3a50d9f93e8b7bc0693b8081d5db77771 (patch) | |
tree | f54eab21dd3d725d64a495fcd47c00d37abed004 /Electronic_Devices_/Chapter7.ipynb | |
parent | a78126bbe4443e9526a64df9d8245c4af8843044 (diff) | |
parent | 83c1bfceb1b681b4bb7253b47491be2d8b2014a1 (diff) | |
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Merge pull request #1 from debashisdeb/master
removing problem statements from all the chapters to avoid copyright violations
Diffstat (limited to 'Electronic_Devices_/Chapter7.ipynb')
-rw-r--r-- | Electronic_Devices_/Chapter7.ipynb | 17 |
1 files changed, 0 insertions, 17 deletions
diff --git a/Electronic_Devices_/Chapter7.ipynb b/Electronic_Devices_/Chapter7.ipynb index c8920a17..ac08bd97 100644 --- a/Electronic_Devices_/Chapter7.ipynb +++ b/Electronic_Devices_/Chapter7.ipynb @@ -42,7 +42,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' Constant current area of operation of JFET'''", "", "# variable declaration", "V_GS_off=-4; # voltage in volt", @@ -83,7 +82,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "'''Drain current'''", "", "print('The p-channel JFET requires a positive gate to source voltage.')", "print('The more positive the voltage, the lesser the drain current.')", @@ -113,7 +111,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "'''JFET current voltage'''", "", "I_DSS=9.0*10**-3;", "V_GS_off=-8.0;", @@ -152,7 +149,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "'''JFET transconductance'''", "", "#Variable Declaration", "I_DSS=3.0*10**-3;", @@ -192,7 +188,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find input resistance'''", "", "# variable declaration", "V_GS=-20.0; # voltage in volt", @@ -227,7 +222,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find gate to source voltage'''", "", "# variable declaration", "V_DD=15; # voltage in volt", @@ -270,7 +264,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find Gate resistance'''", "", "# variable declaration", "V_GS=-5.0; # voltage in volt", @@ -304,7 +297,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "'''Self bias Q point'''", "", "I_DSS=25.0*10**-3;", "V_GS_off=15.0;", @@ -337,7 +329,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find Drain resistance'''", "", "# variable declaration", "V_D=6; # drain voltage in volt", @@ -378,7 +369,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find transfer characteristic'''", "", "import pylab", "import numpy", @@ -456,7 +446,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find gate to source voltage'''", "", "# variable declaration", "V_DD=12; # voltage in volt", @@ -499,7 +488,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find transfer characteristic for Q-point'''", "", "# variable declaration", "R_1=2.2*10**6; # resistance in ohm ", @@ -547,7 +535,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "'''DMOSFET'''", "", "I_DSS=10.0*10**-3;", "V_GS_off=-8.0;", @@ -581,7 +568,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "'''EMOSFET'''", "", "#variable Declaration", "I_D_on=500.0*10**-3;", @@ -614,7 +600,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find drain to source voltage'''", "", "# variable declaration", "I_DSS=12*10**-3; # currenin ampere", @@ -650,7 +635,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "'''EMOSFET bias'''", "", "#variable Declaration", "I_D_on=200.0*10**-3;", @@ -694,7 +678,6 @@ "cell_type": "code", "collapsed": false, "input": [ - "''' To find drain current'''", "", "# variable declaration", "V_GS_on=3; # voltage in volt", |