/* autogenerated from "macros/Electrical/NMOS.sci" */
function NMOS() {
    NMOS.prototype.define = function NMOS() {
model=scicos_model();
W=20.e-6;
L=6.e-6;
Beta=0.041e-3;
Vt=0.8;
K2=1.144;
K5=0.7311;
dW=-2.5e-6;
dL=-1.5e-6;
RDS=1.e+7;
model.sim="NMOS";
model.blocktype="c";
model.dep_ut=[true,false];
mo=modelica();
mo.model="NMOS";
mo.outputs=[["D"],["B"],["S"]];
mo.inputs="G";
mo.parameters=list([["W"],["L"],["Beta"],["Vt"],["K2"],["K5"],["dW"],["dL"],["RDS"]],[[W],[L],[Beta],[Vt],[K2],[K5],[dW],[dL],[RDS]]);
model.equations=mo;
model.in1=ones(size(mo.inputs,"*"),1);
model.out=ones(size(mo.outputs,"*"),1);
exprs=[[string(W)],[string(L)],[string(Beta)],[string(Vt)],[string(K2)],[string(K5)],[string(dW)],[string(dL)],[string(RDS)]];
gr_i=[];
x=standard_define([2,2],model,exprs,gr_i);
x.graphics.in_implicit=["I"];
x.graphics.out_implicit=[["I"],["I"],["I"]];
    }
    NMOS.prototype.details = function NMOS() {
    }
    NMOS.prototype.get = function NMOS() {
    }
    NMOS.prototype.set = function NMOS() {
x=arg1;
graphics=arg1.graphics;
exprs=graphics.exprs;
model=arg1.model;
while (true) {
[ok,W,L,Beta,Vt,K2,K5,dW,dL,RDS,exprs]=scicos_getvalue("Set NMOS Transistor block parameters",[["Width [m]"],["Length [m]"],["Transconductance parameter [A/(V*V)]"],["Zero bias threshold voltage [V]"],["Bulk threshold parameter"],["Reduction of pinch-off region"],["Narrowing of channel [m]"],["Shortening of channel [m]"],["Drain-Source-Resistance [Ohm]"]],list("vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1),exprs);
if (!ok) {
break;
}
model.equations.parameters[2-1]=list(W,L,Beta,Vt,K2,K5,dW,dL,RDS);
graphics.exprs=exprs;
x.graphics=graphics;
x.model=model;
break;
}
    }
}