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Silicon Resistor
* This simulation demonstrates the effects of velocity saturation at
* high lateral electric fields.
VPP 1 0 10v PWL 0s 0.0v 100s 10v
VNN 2 0 0.0v
D1 1 2 M_RES AREA=1
.MODEL M_RES numd level=1
+ options resistor defa=1p
+ x.mesh loc=0.0 num=1
+ x.mesh loc=1.0 num=101
+ domain num=1 material=1
+ material num=1 silicon
+ doping unif n.type conc=2.5e16
+ models bgn srh conctau auger concmob fieldmob
+ method ac=direct
*.OP
.DC VPP 0.0v 10.01v 0.1v
*.TRAN 1s 100.001s 0s 0.2s
.PRINT I(VPP)
.OPTION ACCT BYPASS=1 RELTOL=1e-12
.END
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