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**********************************************************************
* EKV v2.6 parameters for 0.5um CMOS C. EPFL-LEG, 1999
* ----------------------------------
*
* ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set
* for the EKV v2.6 model is provided for NMOS and PMOS.
*
*
* IMPORTANT NOTES:
* ----------------
*
* Parameters do not correspond to a particular technology but
* have reasonable values for standard 0.5um CMOS.
* Not intended for use in real design.
*
* Includes all intrinsic model parameters. An example set for
* extrinsic model parameters is provided.
*
* Geometry range: W >= 0.8um, L >= 0.5um
* Voltage range: |Vgb| < 3.3V, |Vdb| < 3.3V, |Vsb| < 2V
*
* For use with either simulator, comment/uncomment respective lines.
* Use of extrinsic model parameters and models (series resistance,
* junction currents/capacitances) is in general simulator-dependent.
*
**********************************************************************
* EKV v2.6 NMOS
*---------------
.MODEL NCH NMOS
+ LEVEL = 44
*** Setup Parameters
*+ UPDATE = 2.6
*+ XQC = 0.4
*** Process Related Model Parameters
+ COX = 3.45E-3
+ XJ = 0.15E-6
*** Intrinsic Model Parameters
+ VTO = 0.6
+ GAMMA = 0.71
+ PHI = 0.97
+ KP = 150E-6
+ E0 = 88.0E6
+ UCRIT = 4.5E6
+ DL = -0.05E-6
+ DW = -0.02E-6
+ LAMBDA = 0.23
+ LETA = 0.28
+ WETA = 0.05
+ Q0 = 280E-6
+ LK = 0.5E-6
*** Substrate Current Parameters
+ IBN = 1.0
+ IBA = 200E6
+ IBB = 350E6
*** Intrinsic Model Temperature Parameters
+ TNOM = 25.0
+ TCV = 1.5E-3
+ BEX = -1.5
+ UCEX = 1.7
+ IBBT = 0.0
*** 1/f Noise Model Parameters
+ KF = 1E-27
+ AF = 1
*** Short-Distance Matching Statistical Parameters (for MC simulation only)
*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6
*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6
*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6
*** Series Resistance and Area Calulation Parameters
*+ RLEV = 3
+ HDIF = 0.9E-6
+ RSH = 510
*** Junction Current Parameters
*+ ALEV = 3
+ JS = 8.0E-6
+ JSW = 1.5E-10
+ XTI = 0
+ N = 1.5
*** Junction Capacitances Parameters
+ CJ = 8.0E-4
+ CJSW = 3.0E-10
+ MJ = 0.5
+ MJSW = 0.3
+ PB = 0.9
+ PBSW = 0.5
+ FC = 0.5
*** Gate Overlap Capacitances
+ CGSO = 1.5E-10
+ CGDO = 1.5E-10
+ CGBO = 4.0E-10
* EKV v2.6 PMOS
*---------------
.MODEL PCH PMOS
+ LEVEL = 44
*** Setup Parameters
*+ UPDATE = 2.6
*+ XQC = 0.4
*** Process Related Model Parameters
+ COX = 3.45E-3
+ XJ = 0.15E-6
*** Intrinsic Model Parameters
+ VTO = -0.55
+ GAMMA = 0.69
+ PHI = 0.87
+ KP = 35.0E-6
+ E0 = 51.0E6
+ UCRIT = 18.0E6
+ DL = -0.05E-6
+ DW = -0.03E-6
+ LAMBDA = 1.1
+ LETA = 0.45
+ WETA = 0.0
+ Q0 = 200E-6
+ LK = 0.6E-6
*** Substrate Current Parameters
+ IBN = 1.0
+ IBA = 10E6
+ IBB = 300E6
*** Intrinsic Model Temperature Parameters
+ TNOM = 25.0
+ TCV = -1.4E-3
+ BEX = -1.4
+ UCEX = 2.0
+ IBBT = 0.0
*** 1/f Noise Model Parameters
+ KF = 1.0E-28
+ AF = 1
*** Short-Distance Matching Statistical Parameters (for MC simulation only)
*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6
*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6
*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6
*** Series Resistance and Area Calulation Parameters
*+ RLEV = 3
+ HDIF = 0.9E-6
+ RSH = 990
*** Junction Current Parameters
*+ ALEV = 3
+ JS = 4.0E-5
+ JSW = 7.0E-10
+ XTI = 0
+ N = 1.8
*** Junction Capacitances Parameters
+ CJ = 8.0E-4
+ CJSW = 4.0E-10
+ MJ = 0.5
+ MJSW = 0.35
+ PB = 0.9
+ PBSW = 0.8
+ FC = 0.5
*** Gate Overlap Capacitances
+ CGSO = 1.5E-10
+ CGDO = 1.5E-10
+ CGBO = 4.0E-10
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