**
* Numerical models for a
* polysilicon emitter complementary bipolar process.
* The default device size is 1um by 10um (LxW)
**

.model M_NPN nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0  n=51
+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
+ domain   num=1 material=1 x.l=0.0
+ domain   num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
+ doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
+ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 ac=direct itlim=15

.model M_NPSUB numd level=1
+ title One-Dimensional Numerical Collector-Substrate Diode
+ options defa=10p
+ x.mesh loc=1.3  n=1
+ x.mesh loc=2.0  n=101
+ domain   num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ doping unif  p.type conc=1e15  x.l=0.0 x.h=2.0
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 itlim=10

.model M_PNP nbjt level=1
+ title One-Dimensional Numerical Bipolar
+ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p
+ x.mesh loc=-0.2 n=1
+ x.mesh loc=0.0  n=51
+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
+ domain   num=1 material=1 x.l=0.0
+ domain   num=2 material=2 x.h=0.0
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ material num=2 polysilicon
+ mobility mat=2 concmod=ct fieldmod=ct
+ doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
+ doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
+ doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
+ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 ac=direct itlim=15

.model M_PNSUB numd level=1
+ title One-Dimensional Numerical Collector-Substrate Diode
+ options defa=10p
+ x.mesh loc=1.3  n=1
+ x.mesh loc=2.0  n=101
+ domain   num=1 material=1
+ material num=1 silicon
+ mobility mat=1 concmod=ct fieldmod=ct
+ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
+ doping unif  n.type conc=1e15  x.l=0.0 x.h=2.0
+ models bgn srh auger conctau concmob fieldmob ^aval
+ method devtol=1e-12 itlim=10