.MODEL M_NPN nbjt level=2 + title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR + * Since, we are only simulating half of a device, we double the unit width + * 1.0 um emitter length + options defw=2.0u + output dc.debug stat + + *x.mesh w=2.5 n=5 + x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 + x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 + + y.mesh l=-0.2 n=1 + y.mesh l= 0.0 n=5 + y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 + y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 + y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 + y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 + y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 + + domain num=1 material=1 x.l=2.0 y.h=0.0 + domain num=2 material=2 x.h=2.0 y.h=0.0 + domain num=3 material=3 y.l=0.0 + material num=1 polysilicon + material num=2 oxide + material num=3 silicon + + elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 + elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 + + doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 + + char.l=0.047 lat.rotate + doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 + + char.l=0.094 lat.rotate + doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 + doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 + + char.l=0.100 lat.rotate + + method ac=direct itlim=10 + models bgn srh auger conctau concmob fieldmob .MODEL M_NMOS_1 numos + output dc.debug stat + title 1.0um NMOS Device + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 + + doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 + + char.l=0.30 + doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 + doping gauss n.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss n.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=4.10 + models concmob fieldmob surfmob srh auger conctau bgn ^aval + method ac=direct itlim=10 onec .MODEL M_PMOS_1 numos + title 1.0um PMOS Device + + x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 + x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 + x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 + x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 + + y.mesh l=-.0200 n=1 + y.mesh l=0.0 n=6 + y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 + y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 + y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 + + region num=1 material=1 y.h=0.0 + region num=2 material=2 y.l=0.0 + interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 + material num=1 oxide + material num=2 silicon + + elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 + elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 + elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 + elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 + + doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 + + char.l=0.30 + doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 + doping gauss p.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + doping gauss p.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 + + char.l=0.16 lat.rotate ratio=0.65 + doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 + + char.l=0.03 lat.rotate ratio=0.65 + + contact num=2 workf=5.29 + models concmob fieldmob surfmob srh auger conctau bgn ^aval + method ac=direct itlim=10 onec