**********************************************************************
*  EKV v2.6 parameters for 0.5um CMOS		C. EPFL-LEG, 1999
*  ----------------------------------
*
*  ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set
*  for the EKV v2.6 model is provided for NMOS and PMOS.
*
*
*  IMPORTANT NOTES:
*  ----------------
*
*  Parameters do not correspond to a particular technology but
*  have reasonable values for standard 0.5um CMOS.
*  Not intended for use in real design.
*
*  Includes all intrinsic model parameters. An example set for
*  extrinsic model parameters is provided.
*
*  Geometry range:  W >= 0.8um, L >= 0.5um
*  Voltage range:   |Vgb| < 3.3V, |Vdb| < 3.3V,  |Vsb| < 2V
*  
*  For use with either simulator, comment/uncomment respective lines.
*  Use of extrinsic model parameters and models (series resistance,
*  junction currents/capacitances) is in general simulator-dependent.
*
**********************************************************************

*  EKV v2.6 NMOS
*---------------
.MODEL NCH NMOS
+ LEVEL  = 44
*** Setup Parameters
*+ UPDATE = 2.6
*+ XQC    = 0.4
*** Process Related Model Parameters
+ COX    = 3.45E-3
+ XJ     = 0.15E-6
*** Intrinsic Model Parameters
+ VTO    = 0.6
+ GAMMA  = 0.71
+ PHI    = 0.97
+ KP     = 150E-6
+ E0     = 88.0E6
+ UCRIT  = 4.5E6
+ DL     = -0.05E-6
+ DW     = -0.02E-6
+ LAMBDA = 0.23
+ LETA   = 0.28
+ WETA   = 0.05
+ Q0     = 280E-6
+ LK     = 0.5E-6
*** Substrate Current Parameters
+ IBN    = 1.0
+ IBA    = 200E6
+ IBB    = 350E6
*** Intrinsic Model Temperature Parameters
+ TNOM   = 25.0
+ TCV    = 1.5E-3
+ BEX    = -1.5
+ UCEX   = 1.7
+ IBBT   = 0.0
*** 1/f Noise Model Parameters
+ KF     = 1E-27
+ AF     = 1
*** Short-Distance Matching Statistical Parameters (for MC simulation only)
*+ AVTO   = 0		DEV = 10.0E-3	; ELDO v4.6 
*+ AGAMMA = 0		DEV = 10.0E-3	; ELDO v4.6
*+ AKP    = 0		DEV = 25.0E-3	; ELDO v4.6
*** Series Resistance and Area Calulation Parameters
*+ RLEV   = 3
+ HDIF   = 0.9E-6
+ RSH    = 510
*** Junction Current Parameters
*+ ALEV   = 3
+ JS     = 8.0E-6
+ JSW    = 1.5E-10
+ XTI    = 0
+ N      = 1.5
*** Junction Capacitances Parameters
+ CJ     = 8.0E-4
+ CJSW   = 3.0E-10
+ MJ     = 0.5
+ MJSW   = 0.3
+ PB     = 0.9
+ PBSW   = 0.5
+ FC     = 0.5
*** Gate Overlap Capacitances
+ CGSO   = 1.5E-10
+ CGDO   = 1.5E-10
+ CGBO   = 4.0E-10


*  EKV v2.6 PMOS
*---------------
.MODEL PCH PMOS
+ LEVEL  = 44
*** Setup Parameters
*+ UPDATE = 2.6
*+ XQC    = 0.4
*** Process Related Model Parameters
+ COX    = 3.45E-3
+ XJ     = 0.15E-6
*** Intrinsic Model Parameters
+ VTO    = -0.55
+ GAMMA  = 0.69
+ PHI    = 0.87
+ KP     = 35.0E-6
+ E0     = 51.0E6
+ UCRIT  = 18.0E6
+ DL     = -0.05E-6
+ DW     = -0.03E-6
+ LAMBDA = 1.1
+ LETA   = 0.45
+ WETA   = 0.0
+ Q0     = 200E-6
+ LK     = 0.6E-6
*** Substrate Current Parameters
+ IBN    = 1.0
+ IBA    = 10E6
+ IBB    = 300E6
*** Intrinsic Model Temperature Parameters
+ TNOM   = 25.0
+ TCV    = -1.4E-3
+ BEX    = -1.4
+ UCEX   = 2.0
+ IBBT   = 0.0
*** 1/f Noise Model Parameters
+ KF     = 1.0E-28
+ AF     = 1
*** Short-Distance Matching Statistical Parameters (for MC simulation only)
*+ AVTO   = 0		DEV = 10.0E-3	; ELDO v4.6
*+ AGAMMA = 0		DEV = 10.0E-3	; ELDO v4.6
*+ AKP    = 0		DEV = 25.0E-3	; ELDO v4.6
*** Series Resistance and Area Calulation Parameters
*+ RLEV   = 3
+ HDIF   = 0.9E-6
+ RSH    = 990
*** Junction Current Parameters
*+ ALEV   = 3
+ JS     = 4.0E-5
+ JSW    = 7.0E-10
+ XTI    = 0
+ N      = 1.8
*** Junction Capacitances Parameters
+ CJ     = 8.0E-4
+ CJSW   = 4.0E-10
+ MJ     = 0.5
+ MJSW   = 0.35
+ PB     = 0.9
+ PBSW   = 0.8
+ FC     = 0.5
*** Gate Overlap Capacitances
+ CGSO   = 1.5E-10
+ CGDO   = 1.5E-10
+ CGBO   = 4.0E-10