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-Code Model Test - 3d Table Model
-* Ring oscillator made of NAND gates
-*
-*** analysis type ***
-.control
-option trtol=1
-*dc V1 0.0 1.7 0.1 V2 0.3 1.7 0.3
-*op
-tran 100p 20n
-*plot i(Vs) i(Vs2)
-plot v(in1)
-rusage
-.endc
-*
-*** input sources ***
-*
-v1 d 0 DC 1.5
-v2 g 0 DC 1.5
-Vs s 0 0
-Vs2 s2 0 0
-
-vsinv vss 0 0
-vdinv vdd 0 1.5
-*
-*********************
-
-*xmosnt d g s tbmosn
-*mn2 d g s2 s2 n1 l=0.13u w=10u ad=5p pd=6u as=5p ps=6u rgeoMod=1
-
-.SUBCKT NAND VDD VSS in1 in2 out
-* NODES: VCC, Ground, INPUT(2), OUTPUT
-xmospt1 out in2 vdd vdd tbmosp
-xmosnt2 net.1 in2 vss vss tbmosn
-xmospt3 out in1 vdd vdd tbmosp
-xmosnt4 out in1 net.1 vss tbmosn
-.ENDS NAND
-
-
-xmosinv1 vdd vss in1 in1 out1 nand
-xmosinv2 vdd vss out1 out1 out2 nand
-xmosinv3 vdd vss out2 out2 out3 nand
-xmosinv4 vdd vss out3 out3 out4 nand
-xmosinv5 vdd vss out4 out4 in1 nand
-
-.subckt tbmosn d g s b
-*** table model of nmos transistor ***
-cdg d g 0.01p
-csg s g 0.014p
-amos1 %vd(d s) %vd(g s) %vd(b s) %id(d s) mostable1
-.model mostable1 table3d (offset=0.0 gain=0.5 order=3 file="bsim4n-3d-1.table")
-* NMOS L=0.13u W=10.0u rgeoMod=1
-* BSIM 4.7
-* change width of transistor by modifying parameter "gain"
-.ends
-
-.subckt tbmosp d g s b
-*** table model of pmos transistor ***
-cdg d g 0.01p
-csg s g 0.014p
-amos2 %vd(d s) %vd(g s) %vd(b s) %id(d s) mostable2
-.model mostable2 table3d (offset=0.0 gain=1 order=3 file="bsim4p-3d-1.table")
-* PMOS L=0.13u W=10.0u rgeoMod=1
-* BSIM 4.7
-* change width of transistor by modifying parameter "gain"
-.ends
-
-.include ./modelcards/modelcard.nmos
-.include ./modelcards/modelcard.pmos
-
-.end