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-***** Single NMOS Transistor .measure (Id-Vd) ***
-* Altering device witdth leads to select new model due to binning limits.
-* New model has artificially thick gate oxide (changed from default 3n to 4n)
-* to demonstrate the effect.
-m1 d g s b nch L=0.6u W=9.99u ; W is slightly below binning limit
-
-vgs g 0 3.5
-vds d 0 3.5
-vs s 0 dc 0
-vb b 0 dc 0
-
-* model binning
-* uses default parameters, except toxe
-.model nch.1 nmos ( version=4.7 level=54 lmin=0.1u lmax=20u wmin=0.1u wmax=10u toxe=3n )
-.model nch.2 nmos ( version=4.7 level=54 lmin=0.1u lmax=20u wmin=10u wmax=100u toxe=4n)
-
-.control
-dc vds 0 3.5 0.05 vgs 3.5 0.5 -0.5
-meas dc is_at FIND i(vs) AT=1
-meas dc is_max max i(vs)
-meas dc vds_at2 when i(vs)=10m
-* starting with branches in descending order of vgs
-* trig ist the first branch which crosses 5mA
-* Targ is the first branch crossing 10mA
-meas dc vd_diff1 trig i(vs) val=0.005 rise=1 targ i(vs) val=0.01 rise=1
-* trig ist the first branch which crosses 5mA
-* Targ is the second branch crossing 10mA
-meas dc vd_diff2 trig i(vs) val=0.005 rise=2 targ i(vs) val=0.01 rise=2
-alter @m1[w]=10.01u ; W is slightly above binning limit
-dc vds 0 3.5 0.05 vgs 3.5 0.5 -0.5
-meas dc is_at FIND i(vs) AT=1
-meas dc is_max max i(vs)
-meas dc vds_at2 when i(vs)=10m
-meas dc vd_diff1 trig i(vs) val=0.005 rise=1 targ i(vs) val=0.01 rise=1
-* there is only one branch crossing 10mA, so this second meas fails with targ out of interval
-echo
-echo The next one will fail (no two branches crossing 10 mA):
-meas dc vd_diff2 trig i(vs) val=0.005 rise=2 targ i(vs) val=0.01 rise=2
-*rusage all
-plot dc1.i(vs) i(vs)
-.endc
-
-
-.end
-
-
-
-
-