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Diffstat (limited to 'Windows/spice/examples/cider/parallel/BICMOS.LIB')
| -rw-r--r-- | Windows/spice/examples/cider/parallel/BICMOS.LIB | 931 |
1 files changed, 931 insertions, 0 deletions
diff --git a/Windows/spice/examples/cider/parallel/BICMOS.LIB b/Windows/spice/examples/cider/parallel/BICMOS.LIB new file mode 100644 index 00000000..606570ca --- /dev/null +++ b/Windows/spice/examples/cider/parallel/BICMOS.LIB @@ -0,0 +1,931 @@ +** +* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process +* Contains CIDER input descriptions as well as matching +* SPICE models for some of the CIDER models. +** + +** +* One-dimensional models for a +* polysilicon emitter complementary bipolar process. +* The default device size is 1um by 1um (LxW) +** + +.model M_NPN1D nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ++ method devtol=1e-12 ac=direct itlim=15 + +.model M_PNP1D nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ++ method devtol=1e-12 ac=direct itlim=15 + +** +* Two-dimensional models for a +* polysilicon emitter complementary bipolar process. +* The default device size is 1um by 1um (LxW) +** + +.MODEL M_NPNS nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter. Use a small mesh for this model. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 ++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5 ++ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5 ++ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_NPN nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter length. Uses a finer mesh in the X direction. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.003 h.m=0.01 r=1.5 ++ y.mesh w=0.15 h.s=0.003 h.m=0.02 r=1.5 ++ y.mesh w=0.35 h.s=0.02 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_PNPS nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter length. Use a small mesh for this model. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 ++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.12 h.e=0.004 h.m=0.05 r=2.5 ++ y.mesh w=0.28 h.s=0.004 h.m=0.02 r=2.5 ++ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.200 lat.rotate ++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_PNP nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter length. Uses a finer mesh in the X direction. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.12 h.e=0.003 h.m=0.01 r=1.5 ++ y.mesh w=0.28 h.s=0.003 h.m=0.02 r=1.5 ++ y.mesh w=0.20 h.s=0.02 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.200 lat.rotate ++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +** +* Two-dimensional models for a +* complementary MOS process. +* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided. +** + +.MODEL M_NMOS_1 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_2 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_3 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 ++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_4 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 ++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_5 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 ++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_10 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 ++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_50 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 ++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_1 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_2 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_3 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 ++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_4 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 ++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_5 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 ++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_10 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 ++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_50 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 ++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +** +* BSIM1 NMOS and PMOS 1.0 \um models. +* Gummel-Poon bipolar models. +** +.model M_NSIM_1 nmos level=4 ++vfb= -1.1908 ++phi= .8399 ++k1= 1.5329 ++k2= 193.7322m ++eta= 2m ++muz= 746.0 ++u0= 90.0m ++x2mz= 10.1429 ++x2e= -2.5m ++x3e= 0.2m ++x2u0= -10.0m ++mus= 975.0 ++u1= .20 ++x2ms= 0.0 ++x2u1= 0.0 ++x3ms= 10 ++x3u1= 5.0m ++tox=2.00000e-02 ++cgdo=2.0e-10 ++cgso=2.0e-10 ++cgbo=0.0 ++temp= 27 ++vdd= 7.0 ++xpart ++n0= 1.5686 ++nb= 94.6392m ++nd=0.00000e+00 ++rsh=30.0 cj=7.000e-004 cjsw=4.20e-010 ++js=1.00e-008 pb=0.700e000 ++pbsw=0.8000e000 mj=0.5 mjsw=0.33 ++wdf=0 dell=0.20u + +.model M_PSIM_1 pmos level=4 ++vfb= -1.3674 ++phi= .8414 ++k1= 1.5686 ++k2= 203m ++eta= 2m ++muz= 340.0 ++u0= 35.0m ++x2mz= 6.0 ++x2e= 0.0 ++x3e= -0.2m ++x2u0= -15.0m ++mus= 440.0 ++u1= .38 ++x2ms= 0.0 ++x2u1= 0.0 ++x3ms= -20 ++x3u1= -10.0m ++tox=2.00000e-02 ++cgdo=2.0e-10 ++cgso=2.0e-10 ++cgbo=0.0 ++temp= 27 ++vdd= 5.0 ++xpart ++n0= 1.5686 ++nb= 94.6392m ++nd=0.00000e+00 ++rsh=80.0 cj=7.000e-004 cjsw=4.20e-010 ++js=1.00e-008 pb=0.700e000 ++pbsw=0.8000e000 mj=0.5 mjsw=0.33 ++wdf=0 dell=0.17u + +.model M_GNPN npn ++ is=1.3e-16 ++ nf=1.00 bf=262.5 ikf=25mA vaf=20v ++ nr=1.00 br=97.5 ikr=0.5mA var=1.8v ++ rc=20.0 ++ re=0.09 ++ rb=15.0 ++ ise=4.0e-16 ne=2.1 ++ isc=7.2e-17 nc=2.0 ++ tf=9.4ps itf=26uA xtf=0.5 ++ tr=10ns ++ cje=89.44fF vje=0.95 mje=0.5 ++ cjc=12.82fF vjc=0.73 mjc=0.49 + +.model M_GPNP pnp ++ is=5.8e-17 ++ nf=1.001 bf=96.4 ikf=12mA vaf=29v ++ nr=1.0 br=17.3 ikr=0.2mA var=2.0v ++ rc=50.0 ++ re=0.17 ++ rb=20.0 ++ ise=6.8e-17 ne=2.0 ++ isc=9.0e-17 nc=2.1 ++ tf=27.4ps itf=26uA xtf=0.5 ++ tr=10ns ++ cje=55.36fF vje=0.95 mje=0.58 ++ cjc=11.80fF vjc=0.72 mjc=0.46 |