diff options
Diffstat (limited to 'Windows/spice/examples/adms/hicum0')
| -rw-r--r-- | Windows/spice/examples/adms/hicum0/hic0_gum.sp | 17 | ||||
| -rw-r--r-- | Windows/spice/examples/adms/hicum0/hic0_out.sp | 17 | ||||
| -rw-r--r-- | Windows/spice/examples/adms/hicum0/model-card-hicumL0V1p11.lib | 251 |
3 files changed, 285 insertions, 0 deletions
diff --git a/Windows/spice/examples/adms/hicum0/hic0_gum.sp b/Windows/spice/examples/adms/hicum0/hic0_gum.sp new file mode 100644 index 00000000..4d055f26 --- /dev/null +++ b/Windows/spice/examples/adms/hicum0/hic0_gum.sp @@ -0,0 +1,17 @@ +HICUM0 Gummel Test Ic=f(Vc,Vb) + +VB B 0 0.5 +VC C 0 1.0 +VS S 0 0.0 +X1 C B 0 S DT hicumL0V1p1_c_sbt + +.control +dc vb 0.2 1.4 0.01 +run +plot abs(i(vc)) abs(i(vb)) abs(i(vs)) ylimit 0.1e-12 100e-3 ylog +plot abs(i(vc))/abs(i(vb)) vs abs(-i(vc)) xlog xlimit 1e-09 10e-3 ylimit 0 300 +.endc + +.include model-card-hicumL0V1p11.lib + +.end diff --git a/Windows/spice/examples/adms/hicum0/hic0_out.sp b/Windows/spice/examples/adms/hicum0/hic0_out.sp new file mode 100644 index 00000000..aa14ed57 --- /dev/null +++ b/Windows/spice/examples/adms/hicum0/hic0_out.sp @@ -0,0 +1,17 @@ +HICUM0 Output Test Ic=f(Vc,Ib) + +IB 0 B 200n +VC C 0 2.0 +VS S 0 0.0 +X1 C B 0 S DT hicumL0V1p1_c_slh + +.control +dc vc 0.0 3.0 0.05 ib 10u 100u 10u +run +plot abs(i(vc)) +plot v(dt) +.endc + +.include model-card-hicumL0V1p11.lib + +.end diff --git a/Windows/spice/examples/adms/hicum0/model-card-hicumL0V1p11.lib b/Windows/spice/examples/adms/hicum0/model-card-hicumL0V1p11.lib new file mode 100644 index 00000000..0f536d48 --- /dev/null +++ b/Windows/spice/examples/adms/hicum0/model-card-hicumL0V1p11.lib @@ -0,0 +1,251 @@ +******************************************************************************** +******************************************************************************** +* HICUM Level0 Version 1.1 model cards for testing +******************************************************************************** +******************************************************************************** +* 1D transistor: Isothermal Simulation and Temperature dependence +******************************************************************************** +.subckt hicumL0V1p1_1D c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=0.0 rbx=0.0 fgeo=0.73 re=0.0 rcx=0.0 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=1.0e-20 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=0.0 cbcpar=0.0 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_1D +******************************************************************************** +* 1D transistor: Electrothermal Simulation to test self-heating +******************************************************************************** +.subckt hicumL0V1p1_1D_slh c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=0.0 rbx=0.0 fgeo=0.73 re=0.0 rcx=0.0 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=1.0e-20 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=0.0 cbcpar=0.0 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=1000.0 cth=1.0e-10 ++ tnom=27.0 dt=0.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_1D_slh +******************************************************************************** +* 1D transistor: Isothermal Simulation with NQS Effect: future +******************************************************************************** +.subckt hicumL0V1p1_1D_nqs c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=0.0 rbx=0.0 fgeo=0.73 re=0.0 rcx=0.0 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=1.0e-20 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=0.0 cbcpar=0.0 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_1D_nqs +******************************************************************************** +* 1D transistor: Isothermal Simulation to test collector current spreading +******************************************************************************** +.subckt hicumL0V1p1_1D_ccs c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=0.0 rbx=0.0 fgeo=0.73 re=0.0 rcx=0.0 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=1.0e-20 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=0.0 cbcpar=0.0 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_1D_ccs +******************************************************************************** +* Internal transistor: Isothermal Simulation and Temperature dependence (Tunneling current at peripheral node:future) +******************************************************************************** +.subckt hicumL0V1p1_i_tnp c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=0.0 fgeo=0.73 re=0.0 rcx=0.0 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=1.0e-20 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=0.0 cbcpar=0.0 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_i_tnp +******************************************************************************** +* Internal transistor: Isothermal Simulation and Temperature dependence (Tunneling current at internal node:future) +******************************************************************************** +.subckt hicumL0V1p1_i_tni c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=0.0 fgeo=0.73 re=0.0 rcx=0.0 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=1.0e-20 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=0.0 cbcpar=0.0 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_i_tni +******************************************************************************** +* Complete transistor: Isothermal Simulation and Temperature dependence +******************************************************************************** +.subckt hicumL0V1p1_c c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=8.83 fgeo=0.73 re=12.534 rcx=9.165 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=5.4e-15 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=1.13e-15 cbcpar=2.97e-15 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_c +******************************************************************************** +* Complete transistor: Electrothermal Simulation to test self-heating +******************************************************************************** +.subckt hicumL0V1p1_c_slh c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=8.83 fgeo=0.73 re=12.534 rcx=9.165 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=5.4e-15 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=1.13e-15 cbcpar=2.97e-15 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=1000.0 cth=1.0e-10 flsh=2 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_c_slh +******************************************************************************** +* Complete transistor: Isothermal Simulation with NQS Effect: future +******************************************************************************** +.subckt hicumL0V1p1_c_nqs c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=8.83 fgeo=0.73 re=12.534 rcx=9.165 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=5.4e-15 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=1.13e-15 cbcpar=2.97e-15 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_c_nqs +******************************************************************************** +* Complete transistor: Isothermal Simulation to test collector current spreading +******************************************************************************** +.subckt hicumL0V1p1_c_ccs c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=8.83 fgeo=0.73 re=12.534 rcx=9.165 iscs=0.0 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=5.4e-15 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=0.0 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=1.13e-15 cbcpar=2.97e-15 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_c_ccs +******************************************************************************** +* Complete transistor: Isothermal Simulation with substrate diode +******************************************************************************** +.subckt hicumL0V1p1_c_sbt c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=8.83 fgeo=0.73 re=12.534 rcx=9.165 iscs=1.0e-17 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=5.4e-15 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=3.64e-14 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=1.13e-15 cbcpar=2.97e-15 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_c_sbt +******************************************************************************** +* Complete transistor: Isothermal Simulation with substrate network: future +******************************************************************************** +.subckt hicumL0V1p1_c_sbn c b e s dt +qhcm0 c b e s dt hic0_full +.model hic0_full npn level=7 is=1.3525E-18 vef=8.0 iqf=3.0e-2 iqr=1e6 ++ iqfh=1e6 tfh=1e-8 ibes=1.16E-20 mbe=1.015 ires=1.16e-16 mre=2.0 ibcs=1.16e-20 ++ mbc=1.015 mcf=1.0 mcr=1 kavl=0.9488 eavl=11.96e10 alkav=0.825e-4 ++ aleav=0.196e-3 rbi0=71.76 rbx=8.83 fgeo=0.73 re=12.534 rcx=9.165 iscs=1.0e-17 msc=1.0 ++ cje0=8.11e-15 vde=0.95 ze=0.5 aje=1.8 cjci0=1.16e-15 vdci=0.8 zci=0.333 ++ vptci=46 cjcx0=5.4e-15 vdcx=0.7 zcx=0.333 vptcx=100 fbc=0.1526 vr0e=1.6 vr0c=8.0 ++ cjs0=3.64e-14 vds=0.6 zs=0.447 vpts=100 t0=4.75e-12 dt0h=2.1e-12 tbvl=4.0e-12 ++ tef0=1.8e-12 gte=1.4 thcs=30.0e-12 ahc=0.75 tr=0.0 rci0=127.8 vlim=0.7 ++ vces=0.1 vpt=5 cbepar=1.13e-15 cbcpar=2.97e-15 kf=1.43e-8 af=2.0 vgb=1.17 ++ alt0=0.0 kt0=0.0 zetaci=1.6 alvs=1.0e-3 alces=0.4e-3 zetarbi=0.588 ++ zetarbx=0.206 zetarcx=0.223 zetare=0.0 vge=1.1386 vgc=1.1143 vgs=1.15 f1vg=-1.02377e-4 ++ f2vg=4.3215e-4 zetact=3.5 zetabet=4.0 rth=0.0 cth=0.0 ++ tnom=27.0 npn=1 pnp=0 +*+ dt=0.0 +.ends hicumL0V1p1_c_sbn +******************************************************************************** +* Complete test transistor: default +******************************************************************************** +.subckt hicumL0V11_default c b e s dt +qhcm0 c b e s dt hic0_full +.ends hicumL0V11_default +******************************************************************************** |