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Diffstat (limited to 'Windows/spice/examples/adms/ekv/ekv26_0u5.par')
| -rw-r--r-- | Windows/spice/examples/adms/ekv/ekv26_0u5.par | 155 |
1 files changed, 155 insertions, 0 deletions
diff --git a/Windows/spice/examples/adms/ekv/ekv26_0u5.par b/Windows/spice/examples/adms/ekv/ekv26_0u5.par new file mode 100644 index 00000000..0e6c7835 --- /dev/null +++ b/Windows/spice/examples/adms/ekv/ekv26_0u5.par @@ -0,0 +1,155 @@ +********************************************************************** +* EKV v2.6 parameters for 0.5um CMOS C. EPFL-LEG, 1999 +* ---------------------------------- +* +* ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set +* for the EKV v2.6 model is provided for NMOS and PMOS. +* +* +* IMPORTANT NOTES: +* ---------------- +* +* Parameters do not correspond to a particular technology but +* have reasonable values for standard 0.5um CMOS. +* Not intended for use in real design. +* +* Includes all intrinsic model parameters. An example set for +* extrinsic model parameters is provided. +* +* Geometry range: W >= 0.8um, L >= 0.5um +* Voltage range: |Vgb| < 3.3V, |Vdb| < 3.3V, |Vsb| < 2V +* +* For use with either simulator, comment/uncomment respective lines. +* Use of extrinsic model parameters and models (series resistance, +* junction currents/capacitances) is in general simulator-dependent. +* +********************************************************************** + +* EKV v2.6 NMOS +*--------------- +.MODEL NCH NMOS ++ LEVEL = 44 +*** Setup Parameters +*+ UPDATE = 2.6 +*+ XQC = 0.4 +*** Process Related Model Parameters ++ COX = 3.45E-3 ++ XJ = 0.15E-6 +*** Intrinsic Model Parameters ++ VTO = 0.6 ++ GAMMA = 0.71 ++ PHI = 0.97 ++ KP = 150E-6 ++ E0 = 88.0E6 ++ UCRIT = 4.5E6 ++ DL = -0.05E-6 ++ DW = -0.02E-6 ++ LAMBDA = 0.23 ++ LETA = 0.28 ++ WETA = 0.05 ++ Q0 = 280E-6 ++ LK = 0.5E-6 +*** Substrate Current Parameters ++ IBN = 1.0 ++ IBA = 200E6 ++ IBB = 350E6 +*** Intrinsic Model Temperature Parameters ++ TNOM = 25.0 ++ TCV = 1.5E-3 ++ BEX = -1.5 ++ UCEX = 1.7 ++ IBBT = 0.0 +*** 1/f Noise Model Parameters ++ KF = 1E-27 ++ AF = 1 +*** Short-Distance Matching Statistical Parameters (for MC simulation only) +*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 +*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 +*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 +*** Series Resistance and Area Calulation Parameters +*+ RLEV = 3 ++ HDIF = 0.9E-6 ++ RSH = 510 +*** Junction Current Parameters +*+ ALEV = 3 ++ JS = 8.0E-6 ++ JSW = 1.5E-10 ++ XTI = 0 ++ N = 1.5 +*** Junction Capacitances Parameters ++ CJ = 8.0E-4 ++ CJSW = 3.0E-10 ++ MJ = 0.5 ++ MJSW = 0.3 ++ PB = 0.9 ++ PBSW = 0.5 ++ FC = 0.5 +*** Gate Overlap Capacitances ++ CGSO = 1.5E-10 ++ CGDO = 1.5E-10 ++ CGBO = 4.0E-10 + + +* EKV v2.6 PMOS +*--------------- +.MODEL PCH PMOS ++ LEVEL = 44 +*** Setup Parameters +*+ UPDATE = 2.6 +*+ XQC = 0.4 +*** Process Related Model Parameters ++ COX = 3.45E-3 ++ XJ = 0.15E-6 +*** Intrinsic Model Parameters ++ VTO = -0.55 ++ GAMMA = 0.69 ++ PHI = 0.87 ++ KP = 35.0E-6 ++ E0 = 51.0E6 ++ UCRIT = 18.0E6 ++ DL = -0.05E-6 ++ DW = -0.03E-6 ++ LAMBDA = 1.1 ++ LETA = 0.45 ++ WETA = 0.0 ++ Q0 = 200E-6 ++ LK = 0.6E-6 +*** Substrate Current Parameters ++ IBN = 1.0 ++ IBA = 10E6 ++ IBB = 300E6 +*** Intrinsic Model Temperature Parameters ++ TNOM = 25.0 ++ TCV = -1.4E-3 ++ BEX = -1.4 ++ UCEX = 2.0 ++ IBBT = 0.0 +*** 1/f Noise Model Parameters ++ KF = 1.0E-28 ++ AF = 1 +*** Short-Distance Matching Statistical Parameters (for MC simulation only) +*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 +*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 +*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 +*** Series Resistance and Area Calulation Parameters +*+ RLEV = 3 ++ HDIF = 0.9E-6 ++ RSH = 990 +*** Junction Current Parameters +*+ ALEV = 3 ++ JS = 4.0E-5 ++ JSW = 7.0E-10 ++ XTI = 0 ++ N = 1.8 +*** Junction Capacitances Parameters ++ CJ = 8.0E-4 ++ CJSW = 4.0E-10 ++ MJ = 0.5 ++ MJSW = 0.35 ++ PB = 0.9 ++ PBSW = 0.8 ++ FC = 0.5 +*** Gate Overlap Capacitances ++ CGSO = 1.5E-10 ++ CGDO = 1.5E-10 ++ CGBO = 4.0E-10 |