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-README for VDMOS model in NGSPICE
-==================
-
-A simmple MOS model for vertical power transistors (VDMOS model) is under
-development. Originally it has been available in LTSPICE
-(see http://ltwiki.org/LTspiceHelp/LTspiceHelp/M_MOSFET.htm) or
-SuperSpice (https://www.anasoft.co.uk/MOS1Model.htm).
-
-It is based on the MOS1 model. The Meyer capacitance has been
-replaced by a special cap model. A body diode with series
-resistance is parallel to the D/S device nodes. It defines the
-reverse behavior, but also the breakdown of the transistor.
-
-Basic current equations for ac, dc and tran operations are
-available as well as the capacitance model.
-
-Subthreshold behavior (parameter ksubthres) is available,
-and is compatible with LTSPICE. An alternative weak inversion
-model may be seected by choosing the subslope parameter instead
-of ksubthres.
-
-A quasi saturation model enhancement is available.
-
-The model parameters supported are:
-
-/* basic device */
-"vto",   ,"Threshold voltage"
-"kp",    "Transconductance parameter"
-"phi",   "Surface potential"
-"lambda","Channel length modulation"
-"rd",    "Drain ohmic resistance"
-"rs",    "Source ohmic resistance"
-"rg",    "Gate ohmic resistance"
-
-"tnom",  "Parameter measurement temperature"
-"kf",    "Flicker noise coefficient"
-"af",    "Flicker noise exponent"
-
-/* quasi saturation */
-"rq",    "Quasi saturation resistance fitting parameter"
-"vq",    "Quasi saturation voltage fitting parameter"
-
-"mtriode", "Conductance multiplier in triode region"
-
-/* weak inversion */
-"subslope",  "Slope of weak inversion log current versus vgs - vth "
-"subshift",  "Shift of weak inversion plot on the vgs axis "
-"ksubthres", "Slope n from (vgs-vth)/n, LTSPICE and SuperSpice standard"
-
-/* body diode */
-"bv",    "Vds breakdown voltage"
-"ibv",   "Current at Vds=bv"
-"nbv",   "Vds breakdown emission coefficient"
-"rds",   "Drain-source shunt resistance"
-"rb",    "Body diode ohmic resistance"
-"n",     "Bulk diode emission coefficient"
-"tt",    "Body diode transit time"
-"eg",    "Body diode activation energy for temperature effect on Is"
-"Xti",   "Body diode saturation current temperature exponent"
-"is",    "Body diode saturation current"
-"vj",    "Body diode junction potential"
-
-/* body diode capacitance (e.g. source-drain capacitance */
-"fc",    "Body diode coefficient for forward-bias depletion capacitance formula"
-"cjo",   "Zero-bias body diode junction capacitance"
-"m",     "Body diode grading coefficient"
-
-/* gate-source and gate-drain capacitances */
-"cgdmin", "Minimum non-linear G-D capacitance"
-"cgdmax", "Maximum non-linear G-D capacitance"
-"a",      "Non-linear Cgd capacitance parameter"
-"cgs",    "Gate-source capacitance"