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diff --git a/Windows/spice/examples/measure/mos-meas-dc-control.sp b/Windows/spice/examples/measure/mos-meas-dc-control.sp
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+***** Single NMOS Transistor .measure (Id-Vd) ***
+* Altering device witdth leads to select new model due to binning limits.
+* New model has artificially thick gate oxide (changed from default 3n to 4n)
+* to demonstrate the effect.
+m1 d g s b nch L=0.6u W=9.99u  ; W is slightly below binning limit
+
+vgs g 0 3.5 
+vds d 0 3.5 
+vs s 0 dc 0
+vb b 0 dc 0
+
+* model binning
+* uses default parameters, except toxe
+.model nch.1 nmos ( version=4.4 level=54 lmin=0.1u lmax=20u wmin=0.1u wmax=10u toxe=3n )
+.model nch.2 nmos ( version=4.4 level=54 lmin=0.1u lmax=20u wmin=10u  wmax=100u toxe=4n)
+
+.control
+dc vds 0 3.5 0.05 vgs 3.5 0.5 -0.5
+meas dc is_at FIND i(vs) AT=1
+meas dc is_max max i(vs)
+meas dc vds_at2 when i(vs)=10m
+* starting with branches in descending order of vgs
+* trig ist the first branch which crosses 5mA
+* Targ is the first branch crossing 10mA
+meas dc vd_diff1 trig i(vs)  val=0.005   rise=1 targ i(vs) val=0.01  rise=1
+* trig ist the first branch which crosses 5mA
+* Targ is the second branch crossing 10mA
+meas dc vd_diff2 trig i(vs)  val=0.005   rise=2 targ i(vs) val=0.01  rise=2
+alter @m1[w]=10.01u   ; W is slightly above binning limit
+dc vds 0 3.5 0.05 vgs 3.5 0.5 -0.5
+meas dc is_at FIND i(vs) AT=1
+meas dc is_max max i(vs)
+meas dc vds_at2 when i(vs)=10m
+meas dc vd_diff1 trig i(vs)  val=0.005   rise=1 targ i(vs) val=0.01  rise=1
+* there is only one branch crossing 10mA, so this second meas fails with targ out of interval
+echo
+echo The next one will fail (no two branches crossing 10 mA):
+meas dc vd_diff2 trig i(vs)  val=0.005   rise=2 targ i(vs) val=0.01  rise=2
+*rusage all
+plot dc1.i(vs) i(vs)
+.endc
+
+
+.end
+
+
+
+
+