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| author | rahulp13 | 2021-01-07 18:22:29 +0530 |
|---|---|---|
| committer | rahulp13 | 2021-01-07 18:22:29 +0530 |
| commit | d4fd47ecf77597595d3f4fa72fd5334a5fe7417b (patch) | |
| tree | 28095229ec3035d15c569fbedac83cf5876aa196 /Windows/spice/examples/cider | |
| parent | 376e748df438933088721286402462dffd6367c0 (diff) | |
| parent | 63e3156454f39732a3101c29d42b473a89ca68d2 (diff) | |
| download | eSim-d4fd47ecf77597595d3f4fa72fd5334a5fe7417b.tar.gz eSim-d4fd47ecf77597595d3f4fa72fd5334a5fe7417b.tar.bz2 eSim-d4fd47ecf77597595d3f4fa72fd5334a5fe7417b.zip | |
Merge windows installer updates with linux installer
Diffstat (limited to 'Windows/spice/examples/cider')
51 files changed, 0 insertions, 3134 deletions
diff --git a/Windows/spice/examples/cider/bicmos/bicmos.lib b/Windows/spice/examples/cider/bicmos/bicmos.lib deleted file mode 100644 index cc1eb20d..00000000 --- a/Windows/spice/examples/cider/bicmos/bicmos.lib +++ /dev/null @@ -1,127 +0,0 @@ -.MODEL M_NPN nbjt level=2 -+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ * Since, we are only simulating half of a device, we double the unit width -+ * 1.0 um emitter length -+ options defw=2.0u -+ output dc.debug stat -+ -+ *x.mesh w=2.5 n=5 -+ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 -+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 -+ -+ y.mesh l=-0.2 n=1 -+ y.mesh l= 0.0 n=5 -+ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 -+ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 -+ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 -+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 -+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 -+ -+ domain num=1 material=1 x.l=2.0 y.h=0.0 -+ domain num=2 material=2 x.h=2.0 y.h=0.0 -+ domain num=3 material=3 y.l=0.0 -+ material num=1 polysilicon -+ material num=2 oxide -+ material num=3 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 -+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 -+ -+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.047 lat.rotate -+ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.094 lat.rotate -+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 -+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 -+ + char.l=0.100 lat.rotate -+ -+ method ac=direct itlim=10 -+ models bgn srh auger conctau concmob fieldmob - -.MODEL M_NMOS_1 numos -+ output dc.debug stat -+ title 1.0um NMOS Device -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob fieldmob surfmob srh auger conctau bgn ^aval -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_1 numos -+ title 1.0um PMOS Device -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob fieldmob surfmob srh auger conctau bgn ^aval -+ method ac=direct itlim=10 onec diff --git a/Windows/spice/examples/cider/bicmos/bicmpd.cir b/Windows/spice/examples/cider/bicmos/bicmpd.cir deleted file mode 100644 index 8096b49b..00000000 --- a/Windows/spice/examples/cider/bicmos/bicmpd.cir +++ /dev/null @@ -1,26 +0,0 @@ -BiCMOS Pulldown Circuit - -VSS 2 0 0v - -VIN 3 2 0v (PULSE 0.0v 4.2v 0ns 1ns 1ns 9ns 20ns) - -M1 8 3 5 11 M_NMOS_1 W=4u L=1u -VD 4 8 0v -VBK 11 2 0v - -Q1 10 7 9 M_NPN AREA=8 -VC 4 10 0v -VB 5 7 0v -VE 9 2 0v - -CL 4 6 1pF -VL 6 2 0v - -.IC V(10)=5.0v V(7)=0.0v -.TRAN 0.1ns 5ns 0ns 0.1ns -.PLOT TRAN I(VIN) - -.include bicmos.lib - -.OPTIONS ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/bjt/astable.cir b/Windows/spice/examples/cider/bjt/astable.cir deleted file mode 100644 index bdb4a8a8..00000000 --- a/Windows/spice/examples/cider/bjt/astable.cir +++ /dev/null @@ -1,34 +0,0 @@ -Astable multivibrator - -vin 5 0 dc 0 pulse(0 5 0 1us 1us 100us 100us) -vcc 6 0 5.0 -rc1 6 1 1k -rc2 6 2 1k -rb1 6 3 30k -rb2 5 4 30k -c1 1 4 150pf -c2 2 3 150pf -q1 1 3 0 qmod area = 100p -q2 2 4 0 qmod area = 100p - -.option acct bypass=1 -.tran 0.05us 8us 0us 0.05us -.print tran v(1) v(2) v(3) v(4) - -.model qmod nbjt level=1 -+ x.mesh node=1 loc=0.0 -+ x.mesh node=61 loc=3.0 -+ region num=1 material=1 -+ material num=1 silicon nbgnn=1e17 nbgnp=1e17 -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 -+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 -+ models bgnw srh conctau auger concmob fieldmob -+ options base.length=1.0 base.depth=1.25 - -.end diff --git a/Windows/spice/examples/cider/bjt/colposc.cir b/Windows/spice/examples/cider/bjt/colposc.cir deleted file mode 100644 index bd4d31fa..00000000 --- a/Windows/spice/examples/cider/bjt/colposc.cir +++ /dev/null @@ -1,33 +0,0 @@ -Colpitt's Oscillator Circuit - -r1 1 0 1 -q1 2 1 3 qmod area = 100p -vcc 4 0 5 -rl 4 2 750 -c1 2 3 500p -c2 4 3 4500p -l1 4 2 5uH -re 3 6 4.65k -vee 6 0 dc -15 pwl 0 -15 1e-9 -10 - -.tran 30n 12u -.print tran v(2) - -.model qmod nbjt level=1 -+ x.mesh node=1 loc=0.0 -+ x.mesh node=61 loc=3.0 -+ region num=1 material=1 -+ material num=1 silicon nbgnn=1e17 nbgnp=1e17 -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 -+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 -+ models bgnw srh conctau auger concmob fieldmob -+ options base.length=1.0 base.depth=1.25 - -.options acct bypass=1 -.end diff --git a/Windows/spice/examples/cider/bjt/ecp.cir b/Windows/spice/examples/cider/bjt/ecp.cir deleted file mode 100644 index 6fb2bda9..00000000 --- a/Windows/spice/examples/cider/bjt/ecp.cir +++ /dev/null @@ -1,57 +0,0 @@ -Emitter Coupled Pair - -VCC 1 0 5v -VEE 2 0 0v -RCP 1 11 10k -RCN 1 21 10k -VBBP 12 0 3v AC 1 -VBBN 22 0 3v -IEE 13 2 0.1mA -Q1 11 12 13 M_NPN AREA=8 -Q2 21 22 13 M_NPN AREA=8 - -.DC VBBP 2.75v 3.25001v 10mv -.PRINT V(21) V(11) - -.MODEL M_NPN nbjt level=2 -+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ * Since, we are only simulating half of a device, we double the unit width -+ * 1.0 um emitter length -+ options defw=2.0u -+ -+ *x.mesh w=2.5 n=5 -+ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 -+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 -+ -+ y.mesh l=-0.2 n=1 -+ y.mesh l= 0.0 n=5 -+ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 -+ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 -+ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 -+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 -+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 -+ -+ domain num=1 material=1 x.l=2.0 y.h=0.0 -+ domain num=2 material=2 x.h=2.0 y.h=0.0 -+ domain num=3 material=3 y.l=0.0 -+ material num=1 polysilicon -+ material num=2 oxide -+ material num=3 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 -+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 -+ -+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.047 lat.rotate -+ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.094 lat.rotate -+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 -+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 -+ + char.l=0.100 lat.rotate -+ -+ method ac=direct itlim=10 -+ models bgn srh auger conctau concmob fieldmob - -.OPTIONS ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/bjt/invchain.cir b/Windows/spice/examples/cider/bjt/invchain.cir deleted file mode 100644 index 92c6fad8..00000000 --- a/Windows/spice/examples/cider/bjt/invchain.cir +++ /dev/null @@ -1,38 +0,0 @@ -4 Stage RTL Inverter Chain - -vin 1 0 dc 0v pwl 0ns 0v 1ns 5v -vcc 12 0 dc 5.0v -rc1 12 3 2.5k -rb1 1 2 8k -q1 3 2 0 qmod area = 100p -rb2 3 4 8k -rc2 12 5 2.5k -q2 5 4 0 qmod area = 100p -rb3 5 6 8k -rc3 12 7 2.5k -q3 7 6 0 qmod area = 100p -rb4 7 8 8k -rc4 12 9 2.5k -q4 9 8 0 qmod area = 100p - -.print tran v(3) v(5) v(9) -.tran 1e-9 10e-9 - -.model qmod nbjt level=1 -+ x.mesh node=1 loc=0.0 -+ x.mesh node=61 loc=3.0 -+ region num=1 material=1 -+ material num=1 silicon nbgnn=1e17 nbgnp=1e17 -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 -+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 -+ models bgnw srh conctau auger concmob fieldmob -+ options base.length=1.0 base.depth=1.25 - -.option acct bypass=1 -.end diff --git a/Windows/spice/examples/cider/bjt/meclgate.cir b/Windows/spice/examples/cider/bjt/meclgate.cir deleted file mode 100644 index 33542d5d..00000000 --- a/Windows/spice/examples/cider/bjt/meclgate.cir +++ /dev/null @@ -1,74 +0,0 @@ -Motorola MECL III ECL gate -*.dc vin -2.0 0 0.02 -.tran 0.2ns 20ns -vee 22 0 -6.0 -vin 1 0 pulse -0.8 -1.8 0.2ns 0.2ns 0.2ns 10ns 20ns -rs 1 2 50 -q1 4 2 6 qmod area = 100p -q2 4 3 6 qmod area = 100p -q3 5 7 6 qmod area = 100p -q4 0 8 7 qmod area = 100p - -d1 8 9 dmod -d2 9 10 dmod - -rp1 3 22 50k -rc1 0 4 100 -rc2 0 5 112 -re 6 22 380 -r1 7 22 2k -r2 0 8 350 -r3 10 22 1958 - -q5 0 5 11 qmod area = 100p -q6 0 4 12 qmod area = 100p - -rp2 11 22 560 -rp3 12 22 560 - -q7 13 12 15 qmod area = 100p -q8 14 16 15 qmod area = 100p - -re2 15 22 380 -rc3 0 13 100 -rc4 0 14 112 - -q9 0 17 16 qmod area = 100p - -r4 16 22 2k -r5 0 17 350 -d3 17 18 dmod -d4 18 19 dmod -r6 19 22 1958 - -q10 0 14 20 qmod area = 100p -q11 0 13 21 qmod area = 100p - -rp4 20 22 560 -rp5 21 22 560 - -.model dmod d rs=40 tt=0.1ns cjo=0.9pf n=1 is=1e-14 eg=1.11 vj=0.8 m=0.5 - -.model qmod nbjt level=1 -+ x.mesh node=1 loc=0.0 -+ x.mesh node=10 loc=0.9 -+ x.mesh node=20 loc=1.1 -+ x.mesh node=30 loc=1.4 -+ x.mesh node=40 loc=1.6 -+ x.mesh node=61 loc=3.0 -+ region num=1 material=1 -+ material num=1 silicon nbgnn=1e17 nbgnp=1e17 -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 -+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 -+ models bgnw srh conctau auger concmob fieldmob -+ options base.length=1.0 base.depth=1.25 - -.options acct bypass=1 -.print tran v(12) v(21) -.end diff --git a/Windows/spice/examples/cider/bjt/pebjt.lib b/Windows/spice/examples/cider/bjt/pebjt.lib deleted file mode 100644 index afbdb36c..00000000 --- a/Windows/spice/examples/cider/bjt/pebjt.lib +++ /dev/null @@ -1,71 +0,0 @@ -** -* Numerical models for a -* polysilicon emitter complementary bipolar process. -* The default device size is 1um by 10um (LxW) -** - -.model M_NPN nbjt level=1 -+ title One-Dimensional Numerical Bipolar -+ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p -+ x.mesh loc=-0.2 n=1 -+ x.mesh loc=0.0 n=51 -+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 -+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 -+ domain num=1 material=1 x.l=0.0 -+ domain num=2 material=2 x.h=0.0 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ material num=2 polysilicon -+ mobility mat=2 concmod=ct fieldmod=ct -+ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 -+ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 -+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 -+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 -+ models bgn srh auger conctau concmob fieldmob ^aval -+ method devtol=1e-12 ac=direct itlim=15 - -.model M_NPSUB numd level=1 -+ title One-Dimensional Numerical Collector-Substrate Diode -+ options defa=10p -+ x.mesh loc=1.3 n=1 -+ x.mesh loc=2.0 n=101 -+ domain num=1 material=1 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 -+ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 -+ models bgn srh auger conctau concmob fieldmob ^aval -+ method devtol=1e-12 itlim=10 - -.model M_PNP nbjt level=1 -+ title One-Dimensional Numerical Bipolar -+ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p -+ x.mesh loc=-0.2 n=1 -+ x.mesh loc=0.0 n=51 -+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 -+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 -+ domain num=1 material=1 x.l=0.0 -+ domain num=2 material=2 x.h=0.0 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ material num=2 polysilicon -+ mobility mat=2 concmod=ct fieldmod=ct -+ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 -+ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 -+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 -+ models bgn srh auger conctau concmob fieldmob ^aval -+ method devtol=1e-12 ac=direct itlim=15 - -.model M_PNSUB numd level=1 -+ title One-Dimensional Numerical Collector-Substrate Diode -+ options defa=10p -+ x.mesh loc=1.3 n=1 -+ x.mesh loc=2.0 n=101 -+ domain num=1 material=1 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 -+ doping unif n.type conc=1e15 x.l=0.0 x.h=2.0 -+ models bgn srh auger conctau concmob fieldmob ^aval -+ method devtol=1e-12 itlim=10 diff --git a/Windows/spice/examples/cider/bjt/pz.cir b/Windows/spice/examples/cider/bjt/pz.cir deleted file mode 100644 index ad3ee675..00000000 --- a/Windows/spice/examples/cider/bjt/pz.cir +++ /dev/null @@ -1,16 +0,0 @@ -PZ Analysis of a Common Emitter Amplifier - -Vcc 1 0 5v -Vee 2 0 0v - -Vin 3 0 0.7838 AC 1 -RS 3 4 1K -Q1 5 4 2 M_NPN AREA=4 SAVE -RL 1 5 2.5k -CL 5 0 0.1pF - -.INCLUDE pebjt.lib - -.PZ 3 0 5 0 vol pz - -.END diff --git a/Windows/spice/examples/cider/bjt/rtlinv.cir b/Windows/spice/examples/cider/bjt/rtlinv.cir deleted file mode 100644 index f45eb983..00000000 --- a/Windows/spice/examples/cider/bjt/rtlinv.cir +++ /dev/null @@ -1,29 +0,0 @@ -RTL inverter - -vin 1 0 dc 1 pwl 0 4 1ns 0 -vcc 12 0 dc 5.0 -rc1 12 3 2.5k -rb1 1 2 8k -q1 3 2 0 qmod area = 100p - -.option acct bypass=1 -.tran 0.5n 5n -.print tran v(2) v(3) - -.model qmod nbjt level=1 -+ x.mesh node=1 loc=0.0 -+ x.mesh node=61 loc=3.0 -+ region num=1 material=1 -+ material num=1 silicon nbgnn=1e17 nbgnp=1e17 -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 -+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 -+ models bgnw srh conctau auger concmob fieldmob -+ options base.length=1.0 base.depth=1.25 - -.end diff --git a/Windows/spice/examples/cider/bjt/vco.cir b/Windows/spice/examples/cider/bjt/vco.cir deleted file mode 100644 index d1b1a058..00000000 --- a/Windows/spice/examples/cider/bjt/vco.cir +++ /dev/null @@ -1,45 +0,0 @@ -Voltage controlled oscillator - -rc1 7 5 1k -rc2 7 6 1k - -q5 7 7 5 qmod area = 100p -q6 7 7 6 qmod area = 100p - -q3 7 5 2 qmod area = 100p -q4 7 6 1 qmod area = 100p - -ib1 2 0 .5ma -ib2 1 0 .5ma -cb1 2 0 1pf -cb2 1 0 1pf - -q1 5 1 3 qmod area = 100p -q2 6 2 4 qmod area = 100p - -c1 3 4 .1uf - -is1 3 0 dc 2.5ma pulse 2.5ma 0.5ma 0 1us 1us 50ms -is2 4 0 1ma -vcc 7 0 10 - -.model qmod nbjt level=1 -+ x.mesh node=1 loc=0.0 -+ x.mesh node=61 loc=3.0 -+ region num=1 material=1 -+ material num=1 silicon nbgnn=1e17 nbgnp=1e17 -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 -+ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 -+ models bgnw srh conctau auger concmob fieldmob -+ options base.length=1.0 base.depth=1.25 - -.option acct bypass=1 -.tran 3us 600us 0 3us -.print tran v(4) -.end diff --git a/Windows/spice/examples/cider/diode/diode.cir b/Windows/spice/examples/cider/diode/diode.cir deleted file mode 100644 index e0ace324..00000000 --- a/Windows/spice/examples/cider/diode/diode.cir +++ /dev/null @@ -1,35 +0,0 @@ -One-Dimensional Diode Simulation - -* Several simulations are performed by this file. -* They are: -* 1. An operating point at 0.7v forward bias. -* 2. An ac analysis at 0.7v forward bias. -* 3. The forward and reverse bias characteristics from -3v to 2v. - -Vpp 1 0 0.7v (PWL 0ns 3.0v 0.01ns -6.0v) (AC 1v) -Vnn 2 0 0v -D1 1 2 M_PN AREA=100 - -.model M_PN numd level=1 -+ *************************************** -+ *** One-Dimensional Numerical Diode *** -+ *************************************** -+ options defa=1p -+ x.mesh loc=0.0 n=1 -+ x.mesh loc=1.3 n=201 -+ domain num=1 material=1 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.0 char.l=0.100 -+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 -+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.l=0.100 -+ models bgn aval srh auger conctau concmob fieldmob -+ method ac=direct - -.option acct bypass=0 abstol=1e-18 itl2=100 -.op -.ac dec 10 100kHz 10gHz -.dc Vpp -3.0v 2.0001v 50mv -.print i(Vpp) - -.END diff --git a/Windows/spice/examples/cider/diode/diotran.cir b/Windows/spice/examples/cider/diode/diotran.cir deleted file mode 100644 index 110d2550..00000000 --- a/Windows/spice/examples/cider/diode/diotran.cir +++ /dev/null @@ -1,31 +0,0 @@ -Diode Reverse Recovery - -* This file simulates reverse recovery of a diode as it switched from an -* on to off state. - -Vpp 1 0 0.7v (PWL 0ns 3.0v 0.1ns 3.0v 0.11ns -6.0v) (AC 1v) -Vnn 2 0 0v -R1 1 3 1k -D1 3 2 M_PN area=100 - -.MODEL M_PN numd level=1 -+ *************************************** -+ *** One-Dimensional Numerical Diode *** -+ *************************************** -+ options defa=1p -+ x.mesh loc=0.0 n=1 -+ x.mesh loc=1.3 n=201 -+ domain num=1 material=1 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ doping gauss p.type conc=3e20 x.l=0.0 x.h=0.0 char.l=0.100 -+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 -+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.l=0.100 -+ models bgn aval srh auger conctau concmob fieldmob -+ method ac=direct - -.option acct bypass=1 abstol=1e-15 itl2=100 -.tran 0.001ns 1.0ns -.print i(Vpp) - -.END diff --git a/Windows/spice/examples/cider/diode/pindiode.cir b/Windows/spice/examples/cider/diode/pindiode.cir deleted file mode 100644 index 1eb18b42..00000000 --- a/Windows/spice/examples/cider/diode/pindiode.cir +++ /dev/null @@ -1,42 +0,0 @@ -TWO-DIMENSIONAL PIN-DIODE CIRCUIT - -VIN 1 0 0.0v (PWL 0ns 0.8v 1ns -50.0v) -L1 1 2 0.5uH -VD 2 3 0.0v -D1 3 0 M_PIN AREA=200 IC.FILE="OP.0.d1" -VRC 2 4 0.0v -R1 4 5 100 -C1 5 0 1.0nF - -.MODEL M_PIN NUMD LEVEL=2 -+ options defw=1000u -+ x.mesh n=1 l=0.0 -+ x.mesh n=2 l=0.2 -+ x.mesh n=4 l=0.4 -+ x.mesh n=8 l=0.6 -+ x.mesh n=13 l=1.0 -+ -+ y.mesh n=1 l=0.0 -+ y.mesh n=9 l=4.0 -+ y.mesh n=24 l=10.0 -+ y.mesh n=29 l=15.0 -+ y.mesh n=34 l=20.0 -+ -+ domain num=1 material=1 -+ material num=1 silicon tn=20ns tp=20ns -+ -+ electrode num=1 x.l=0.6 x.h=1.0 y.h=0.0 -+ electrode num=2 y.l=20.0 -+ -+ doping gauss p.type conc=1.0e20 char.len=1.076 x.l=0.75 x.h=1.1 y.h=0.0 -+ + lat.rotate ratio=0.1 -+ doping unif n.type conc=1.0e14 -+ doping gauss n.type conc=1.0e20 char.len=1.614 x.l=-0.1 x.h=1.1 y.l=20.0 -+ -+ models bgn srh auger conctau concmob fieldmob - -.OPTION ACCT BYPASS=1 -.TRAN 1NS 100NS -.PRINT TRAN v(3) I(VIN) - -.END diff --git a/Windows/spice/examples/cider/jfet/jfet.cir b/Windows/spice/examples/cider/jfet/jfet.cir deleted file mode 100644 index e3f00536..00000000 --- a/Windows/spice/examples/cider/jfet/jfet.cir +++ /dev/null @@ -1,36 +0,0 @@ -Two-dimensional Junction Field-Effect Transistor (JFET) - -VDD 1 0 0.5V -VGG 2 0 -1.0v AC 1V -VSS 3 0 0.0V -QJ1 1 2 3 M_NJF AREA=1 - -.MODEL M_NJF NBJT LEVEL=2 -+ options jfet defw=10.0um -+ output dc.debug phin phip equ.psi vac.psi -+ x.mesh w=0.2 h.e=0.001 r=1.8 -+ x.mesh w=0.8 h.s=0.001 h.m=0.1 r=2.0 -+ x.mesh w=0.8 h.e=0.001 h.m=0.1 r=2.0 -+ x.mesh w=0.2 h.s=0.001 r=1.8 -+ y.mesh w=0.2 h.e=0.01 r=1.8 -+ y.mesh w=0.8 h.s=0.01 h.m=0.1 r=1.8 -+ -+ domain num=1 mat=1 -+ material num=1 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=0.0 y.h=1.0 -+ elec num=2 x.l=0.5 x.h=1.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=2.0 y.l=0.0 y.h=1.0 -+ -+ doping unif n.type conc=3.0e15 -+ doping unif p.type conc=2.0e17 x.l=0.2 x.h=1.8 y.h=0.2 -+ -+ models bgn srh auger conctau concmob fieldmob ^aval - -.option acct bypass=1 temp=27 -*.op -.dc vgg 0.0 -2.0001 -0.1 -*.ac dec 10 1k 100g -.print i(vnn) - -.end diff --git a/Windows/spice/examples/cider/mos/bootinv.cir b/Windows/spice/examples/cider/mos/bootinv.cir deleted file mode 100644 index 4c2ea40d..00000000 --- a/Windows/spice/examples/cider/mos/bootinv.cir +++ /dev/null @@ -1,59 +0,0 @@ -NMOS Enhancement-Load Bootstrap Inverter - -Vdd 1 0 5.0v -Vss 2 0 0.0v - -Vin 5 0 0.0v PWL (0.0ns 5.0v) (1ns 0.0v) (10ns 0.0v) (11ns 5.0v) -+ (20ns 5.0v) (21ns 0.0v) (30ns 0.0v) (31ns 5.0v) -M1 1 1 3 2 M_NMOS w=5u -M2 1 3 4 4 M_NMOS w=5u -M3 4 5 2 2 M_NMOS w=5u -CL 4 0 0.1pf -CB 3 4 0.1pf - -.model M_NMOS numos -+ x.mesh l=0.0 n=1 -+ x.mesh l=0.6 n=4 -+ x.mesh l=0.7 n=5 -+ x.mesh l=1.0 n=7 -+ x.mesh l=1.2 n=11 -+ x.mesh l=3.2 n=21 -+ x.mesh l=3.4 n=25 -+ x.mesh l=3.7 n=27 -+ x.mesh l=3.8 n=28 -+ x.mesh l=4.4 n=31 -+ -+ y.mesh l=-.05 n=1 -+ y.mesh l=0.0 n=5 -+ y.mesh l=.05 n=9 -+ y.mesh l=0.3 n=14 -+ y.mesh l=2.0 n=19 -+ -+ region num=1 material=1 y.l=0.0 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 init elec major -+ mobility material=1 init elec minor -+ mobility material=1 init hole major -+ mobility material=1 init hole minor -+ -+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 -+ material num=2 oxide -+ -+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 -+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 -+ -+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 -+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 -+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 -+ -+ models concmob fieldmob -+ method ac=direct onec - -.tran 0.2ns 40ns -.print v(4) -.options acct bypass=1 method=gear -.end diff --git a/Windows/spice/examples/cider/mos/charge.cir b/Windows/spice/examples/cider/mos/charge.cir deleted file mode 100644 index 845a14a8..00000000 --- a/Windows/spice/examples/cider/mos/charge.cir +++ /dev/null @@ -1,57 +0,0 @@ -MOS charge pump - -vin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100ns -vdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100ns -vbb 0 7 dc 0v pulse 0 5 0ns 5ns 5ns 50ns 100ns -rd 6 2 10k -m1 5 4 3 7 mmod w=100um -vs 3 2 0 -vc 2 1 0 -c2 1 0 10pf - -.ic v(3)=1.0 -.tran 2ns 200ns -.options acct bypass=1 -.print tran v(1) v(2) - -.model mmod numos -+ x.mesh n=1 l=0 -+ x.mesh n=3 l=0.4 -+ x.mesh n=7 l=0.6 -+ x.mesh n=15 l=1.4 -+ x.mesh n=19 l=1.6 -+ x.mesh n=21 l=2.0 -+ -+ y.mesh n=1 l=0 -+ y.mesh n=4 l=0.015 -+ y.mesh n=8 l=0.05 -+ y.mesh n=12 l=0.25 -+ y.mesh n=14 l=0.35 -+ y.mesh n=17 l=0.5 -+ y.mesh n=21 l=1.0 -+ -+ region num=1 material=1 y.l=0.015 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ -+ region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5 -+ material num=2 oxide -+ -+ elec num=1 ix.l=18 ix.h=21 iy.l=4 iy.h=4 -+ elec num=2 ix.l=5 ix.h=17 iy.l=1 iy.h=1 -+ elec num=3 ix.l=1 ix.h=4 iy.l=4 iy.h=4 -+ elec num=4 ix.l=1 ix.h=21 iy.l=21 iy.h=21 -+ -+ doping unif n.type conc=1e18 x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25 -+ doping unif n.type conc=1e18 x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25 -+ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0 -+ doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05 -+ -+ models concmob fieldmob -+ method onec - -.end diff --git a/Windows/spice/examples/cider/mos/cmosinv.cir b/Windows/spice/examples/cider/mos/cmosinv.cir deleted file mode 100644 index 8f153cc7..00000000 --- a/Windows/spice/examples/cider/mos/cmosinv.cir +++ /dev/null @@ -1,115 +0,0 @@ -CMOS Inverter - -Vdd 1 0 5.0v -Vss 2 0 0.0v - -X1 1 2 3 4 INV - -Vin 3 0 2.5v - -.SUBCKT INV 1 2 3 4 -* Vdd Vss Vin Vout -M1 14 13 15 16 M_PMOS w=6.0u -M2 24 23 25 26 M_NMOS w=3.0u - -Vgp 3 13 0.0v -Vdp 4 14 0.0v -Vsp 1 15 0.0v -Vbp 1 16 0.0v - -Vgn 3 23 0.0v -Vdn 4 24 0.0v -Vsn 2 25 0.0v -Vbn 2 26 0.0v -.ENDS INV - -.model M_NMOS numos -+ x.mesh l=0.0 n=1 -+ x.mesh l=0.6 n=4 -+ x.mesh l=0.7 n=5 -+ x.mesh l=1.0 n=7 -+ x.mesh l=1.2 n=11 -+ x.mesh l=3.2 n=21 -+ x.mesh l=3.4 n=25 -+ x.mesh l=3.7 n=27 -+ x.mesh l=3.8 n=28 -+ x.mesh l=4.4 n=31 -+ -+ y.mesh l=-.05 n=1 -+ y.mesh l=0.0 n=5 -+ y.mesh l=.05 n=9 -+ y.mesh l=0.3 n=14 -+ y.mesh l=2.0 n=19 -+ -+ region num=1 material=1 y.l=0.0 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ -+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 -+ material num=2 oxide -+ -+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 -+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 -+ -+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 -+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 -+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 -+ -+ models concmob fieldmob bgn srh conctau -+ method ac=direct onec - -.model M_PMOS numos -+ x.mesh l=0.0 n=1 -+ x.mesh l=0.6 n=4 -+ x.mesh l=0.7 n=5 -+ x.mesh l=1.0 n=7 -+ x.mesh l=1.2 n=11 -+ x.mesh l=3.2 n=21 -+ x.mesh l=3.4 n=25 -+ x.mesh l=3.7 n=27 -+ x.mesh l=3.8 n=28 -+ x.mesh l=4.4 n=31 -+ -+ y.mesh l=-.05 n=1 -+ y.mesh l=0.0 n=5 -+ y.mesh l=.05 n=9 -+ y.mesh l=0.3 n=14 -+ y.mesh l=2.0 n=19 -+ -+ region num=1 material=1 y.l=0.0 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ -+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 -+ material num=2 oxide -+ -+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 -+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 -+ -+ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 -+ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 -+ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 -+ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 -+ -+ models concmob fieldmob bgn srh conctau -+ method ac=direct onec - -*.tran 0.1ns 5ns -*.op -.dc Vin 0.0v 5.001v 0.05v -.print v(4) -.options acct bypass=1 method=gear -.end diff --git a/Windows/spice/examples/cider/mos/nmosinv.cir b/Windows/spice/examples/cider/mos/nmosinv.cir deleted file mode 100644 index ac49c754..00000000 --- a/Windows/spice/examples/cider/mos/nmosinv.cir +++ /dev/null @@ -1,55 +0,0 @@ -Resistive load NMOS inverter -vin 1 0 pwl 0 0.0 2ns 5 -vdd 3 0 dc 5.0 -rd 3 2 2.5k -m1 2 1 4 5 mmod w=10um -cl 2 0 2pf -vb 5 0 0 -vs 4 0 0 - -.model mmod numos -+ x.mesh l=0.0 n=1 -+ x.mesh l=0.6 n=4 -+ x.mesh l=0.7 n=5 -+ x.mesh l=1.0 n=7 -+ x.mesh l=1.2 n=11 -+ x.mesh l=3.2 n=21 -+ x.mesh l=3.4 n=25 -+ x.mesh l=3.7 n=27 -+ x.mesh l=3.8 n=28 -+ x.mesh l=4.4 n=31 -+ -+ y.mesh l=-.05 n=1 -+ y.mesh l=0.0 n=5 -+ y.mesh l=.05 n=9 -+ y.mesh l=0.3 n=14 -+ y.mesh l=2.0 n=19 -+ -+ region num=1 material=1 y.l=0.0 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ -+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 -+ material num=2 oxide -+ -+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 -+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 -+ -+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 -+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 -+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 -+ -+ models concmob fieldmob -+ method ac=direct onec - -.tran 0.2ns 30ns -.options acct bypass=1 -.print tran v(1) v(2) -.end diff --git a/Windows/spice/examples/cider/mos/pass.cir b/Windows/spice/examples/cider/mos/pass.cir deleted file mode 100644 index a58c8a5f..00000000 --- a/Windows/spice/examples/cider/mos/pass.cir +++ /dev/null @@ -1,59 +0,0 @@ -Turnoff transient of pass transistor - -M1 11 2 3 4 mmod w=20um -Cs 1 0 6.0pF -Cl 3 0 6.0pF -R1 3 6 200k -Vin 6 0 dc 0 -Vdrn 1 11 dc 0 -Vg 2 0 dc 5 pwl 0 5 0.1n 0 1 0 -Vb 4 0 dc 0.0 - -.tran 0.05ns 0.2ns 0.0ns 0.05ns -.print tran v(1) i(Vdrn) -.ic v(1)=0 v(3)=0 -.option acct bypass=1 - -.model mmod numos -+ x.mesh l=0.0 n=1 -+ x.mesh l=0.6 n=4 -+ x.mesh l=0.7 n=5 -+ x.mesh l=1.0 n=7 -+ x.mesh l=1.2 n=11 -+ x.mesh l=3.2 n=21 -+ x.mesh l=3.4 n=25 -+ x.mesh l=3.7 n=27 -+ x.mesh l=3.8 n=28 -+ x.mesh l=4.4 n=31 -+ -+ y.mesh l=-.05 n=1 -+ y.mesh l=0.0 n=5 -+ y.mesh l=.05 n=9 -+ y.mesh l=0.3 n=14 -+ y.mesh l=2.0 n=19 -+ -+ region num=1 material=1 y.l=0.0 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ -+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 -+ material num=2 oxide -+ -+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 -+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 -+ -+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 -+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 -+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 -+ -+ models concmob fieldmob -+ method ac=direct onec - -.end diff --git a/Windows/spice/examples/cider/mos/ringosc.cir b/Windows/spice/examples/cider/mos/ringosc.cir deleted file mode 100644 index 0f313320..00000000 --- a/Windows/spice/examples/cider/mos/ringosc.cir +++ /dev/null @@ -1,122 +0,0 @@ -CMOS Ring Oscillator - -Vdd 1 0 5.0v -Vss 2 0 0.0v - -X1 1 2 3 4 INV -X2 1 2 4 5 INV -X3 1 2 5 3 INV -*X4 1 2 6 7 INV -*X5 1 2 7 8 INV -*X6 1 2 8 9 INV -*X7 1 2 9 3 INV - -.IC V(3)=0.0v V(4)=2.5v V(5)=5.0v -* V(6)=0.0v V(7)=5.0v V(8)=0.0v V(9)=5.0v - -Vin 3 0 2.5v - -.SUBCKT INV 1 2 3 4 -* Vdd Vss Vin Vout -M1 14 13 15 16 M_PMOS w=6.0u -M2 24 23 25 26 M_NMOS w=3.0u - -Vgp 3 13 0.0v -Vdp 4 14 0.0v -Vsp 1 15 0.0v -Vbp 1 16 0.0v - -Vgn 3 23 0.0v -Vdn 4 24 0.0v -Vsn 2 25 0.0v -Vbn 2 26 0.0v -.ENDS INV - -.model M_NMOS numos -+ x.mesh l=0.0 n=1 -+ x.mesh l=0.6 n=4 -+ x.mesh l=0.7 n=5 -+ x.mesh l=1.0 n=7 -+ x.mesh l=1.2 n=11 -+ x.mesh l=3.2 n=21 -+ x.mesh l=3.4 n=25 -+ x.mesh l=3.7 n=27 -+ x.mesh l=3.8 n=28 -+ x.mesh l=4.4 n=31 -+ -+ y.mesh l=-.05 n=1 -+ y.mesh l=0.0 n=5 -+ y.mesh l=.05 n=9 -+ y.mesh l=0.3 n=14 -+ y.mesh l=2.0 n=19 -+ -+ region num=1 material=1 y.l=0.0 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ -+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 -+ material num=2 oxide -+ -+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 -+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 -+ -+ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 -+ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 -+ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 -+ -+ models concmob fieldmob bgn srh conctau -+ method ac=direct onec - -.model M_PMOS numos -+ x.mesh l=0.0 n=1 -+ x.mesh l=0.6 n=4 -+ x.mesh l=0.7 n=5 -+ x.mesh l=1.0 n=7 -+ x.mesh l=1.2 n=11 -+ x.mesh l=3.2 n=21 -+ x.mesh l=3.4 n=25 -+ x.mesh l=3.7 n=27 -+ x.mesh l=3.8 n=28 -+ x.mesh l=4.4 n=31 -+ -+ y.mesh l=-.05 n=1 -+ y.mesh l=0.0 n=5 -+ y.mesh l=.05 n=9 -+ y.mesh l=0.3 n=14 -+ y.mesh l=2.0 n=19 -+ -+ region num=1 material=1 y.l=0.0 -+ material num=1 silicon -+ mobility material=1 concmod=sg fieldmod=sg -+ mobility material=1 elec major -+ mobility material=1 elec minor -+ mobility material=1 hole major -+ mobility material=1 hole minor -+ -+ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 -+ material num=2 oxide -+ -+ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 -+ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 -+ -+ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 -+ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 -+ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 -+ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 -+ -+ models concmob fieldmob bgn srh conctau -+ method ac=direct onec - -.tran 0.1ns 5ns -.print v(4) -.options acct bypass=1 method=gear -.end diff --git a/Windows/spice/examples/cider/parallel/BICMOS.LIB b/Windows/spice/examples/cider/parallel/BICMOS.LIB deleted file mode 100644 index 606570ca..00000000 --- a/Windows/spice/examples/cider/parallel/BICMOS.LIB +++ /dev/null @@ -1,931 +0,0 @@ -** -* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process -* Contains CIDER input descriptions as well as matching -* SPICE models for some of the CIDER models. -** - -** -* One-dimensional models for a -* polysilicon emitter complementary bipolar process. -* The default device size is 1um by 1um (LxW) -** - -.model M_NPN1D nbjt level=1 -+ title One-Dimensional Numerical Bipolar -+ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p -+ x.mesh loc=-0.2 n=1 -+ x.mesh loc=0.0 n=51 -+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 -+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 -+ domain num=1 material=1 x.l=0.0 -+ domain num=2 material=2 x.h=0.0 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ material num=2 polysilicon -+ mobility mat=2 concmod=ct fieldmod=ct -+ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 -+ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 -+ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 -+ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 -+ models bgn srh auger conctau concmob fieldmob -+ method devtol=1e-12 ac=direct itlim=15 - -.model M_PNP1D nbjt level=1 -+ title One-Dimensional Numerical Bipolar -+ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p -+ x.mesh loc=-0.2 n=1 -+ x.mesh loc=0.0 n=51 -+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 -+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 -+ domain num=1 material=1 x.l=0.0 -+ domain num=2 material=2 x.h=0.0 -+ material num=1 silicon -+ mobility mat=1 concmod=ct fieldmod=ct -+ material num=2 polysilicon -+ mobility mat=2 concmod=ct fieldmod=ct -+ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 -+ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 -+ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 -+ models bgn srh auger conctau concmob fieldmob -+ method devtol=1e-12 ac=direct itlim=15 - -** -* Two-dimensional models for a -* polysilicon emitter complementary bipolar process. -* The default device size is 1um by 1um (LxW) -** - -.MODEL M_NPNS nbjt level=2 -+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ * Since half the device is simulated, double the unit width to get -+ * 1.0 um emitter. Use a small mesh for this model. -+ options defw=2.0u -+ output stat -+ -+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 -+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 -+ -+ y.mesh l=-0.2 n=1 -+ y.mesh l= 0.0 n=5 -+ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5 -+ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5 -+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 -+ -+ domain num=1 material=1 x.l=2.0 y.h=0.0 -+ domain num=2 material=2 x.h=2.0 y.h=0.0 -+ domain num=3 material=3 y.l=0.0 -+ material num=1 polysilicon -+ material num=2 oxide -+ material num=3 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 -+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 -+ -+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.047 lat.rotate -+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.100 lat.rotate -+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 -+ + char.l=0.100 lat.rotate ratio=0.7 -+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 -+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 -+ + char.l=0.100 lat.rotate -+ -+ method ac=direct itlim=10 -+ models bgn srh auger conctau concmob fieldmob - -.MODEL M_NPN nbjt level=2 -+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ * Since half the device is simulated, double the unit width to get -+ * 1.0 um emitter length. Uses a finer mesh in the X direction. -+ options defw=2.0u -+ output stat -+ -+ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 -+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 -+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 -+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 -+ -+ y.mesh l=-0.2 n=1 -+ y.mesh l= 0.0 n=5 -+ y.mesh w=0.10 h.e=0.003 h.m=0.01 r=1.5 -+ y.mesh w=0.15 h.s=0.003 h.m=0.02 r=1.5 -+ y.mesh w=0.35 h.s=0.02 h.m=0.2 r=1.5 -+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 -+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 -+ -+ domain num=1 material=1 x.l=2.0 y.h=0.0 -+ domain num=2 material=2 x.h=2.0 y.h=0.0 -+ domain num=3 material=3 y.l=0.0 -+ material num=1 polysilicon -+ material num=2 oxide -+ material num=3 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 -+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 -+ -+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.047 lat.rotate -+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.100 lat.rotate -+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 -+ + char.l=0.100 lat.rotate ratio=0.7 -+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 -+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 -+ + char.l=0.100 lat.rotate -+ -+ method ac=direct itlim=10 -+ models bgn srh auger conctau concmob fieldmob - -.MODEL M_PNPS nbjt level=2 -+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ * Since half the device is simulated, double the unit width to get -+ * 1.0 um emitter length. Use a small mesh for this model. -+ options defw=2.0u -+ output stat -+ -+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 -+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 -+ -+ y.mesh l=-0.2 n=1 -+ y.mesh l= 0.0 n=5 -+ y.mesh w=0.12 h.e=0.004 h.m=0.05 r=2.5 -+ y.mesh w=0.28 h.s=0.004 h.m=0.02 r=2.5 -+ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 -+ -+ domain num=1 material=1 x.l=2.0 y.h=0.0 -+ domain num=2 material=2 x.h=2.0 y.h=0.0 -+ domain num=3 material=3 y.l=0.0 -+ material num=1 polysilicon -+ material num=2 oxide -+ material num=3 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 -+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 -+ -+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.047 lat.rotate -+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.200 lat.rotate -+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 -+ + char.l=0.100 lat.rotate ratio=0.7 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 -+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 -+ + char.l=0.100 lat.rotate -+ -+ method ac=direct itlim=10 -+ models bgn srh auger conctau concmob fieldmob - -.MODEL M_PNP nbjt level=2 -+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ * Since half the device is simulated, double the unit width to get -+ * 1.0 um emitter length. Uses a finer mesh in the X direction. -+ options defw=2.0u -+ output stat -+ -+ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 -+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 -+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 -+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 -+ -+ y.mesh l=-0.2 n=1 -+ y.mesh l= 0.0 n=5 -+ y.mesh w=0.12 h.e=0.003 h.m=0.01 r=1.5 -+ y.mesh w=0.28 h.s=0.003 h.m=0.02 r=1.5 -+ y.mesh w=0.20 h.s=0.02 h.m=0.2 r=1.5 -+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 -+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 -+ -+ domain num=1 material=1 x.l=2.0 y.h=0.0 -+ domain num=2 material=2 x.h=2.0 y.h=0.0 -+ domain num=3 material=3 y.l=0.0 -+ material num=1 polysilicon -+ material num=2 oxide -+ material num=3 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 -+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 -+ -+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.047 lat.rotate -+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.200 lat.rotate -+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 -+ + char.l=0.100 lat.rotate ratio=0.7 -+ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 -+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 -+ + char.l=0.100 lat.rotate -+ -+ method ac=direct itlim=10 -+ models bgn srh auger conctau concmob fieldmob - -** -* Two-dimensional models for a -* complementary MOS process. -* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided. -** - -.MODEL M_NMOS_1 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_NMOS_2 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 -+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_NMOS_3 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 -+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_NMOS_4 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 -+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_NMOS_5 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 -+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_NMOS_10 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 -+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_NMOS_50 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 -+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_1 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_2 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 -+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_3 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 -+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_4 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 -+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_5 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 -+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_10 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 -+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_50 numos -+ output stat -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 -+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob surfmob transmob fieldmob srh auger conctau bgn -+ method ac=direct itlim=10 onec - -** -* BSIM1 NMOS and PMOS 1.0 \um models. -* Gummel-Poon bipolar models. -** -.model M_NSIM_1 nmos level=4 -+vfb= -1.1908 -+phi= .8399 -+k1= 1.5329 -+k2= 193.7322m -+eta= 2m -+muz= 746.0 -+u0= 90.0m -+x2mz= 10.1429 -+x2e= -2.5m -+x3e= 0.2m -+x2u0= -10.0m -+mus= 975.0 -+u1= .20 -+x2ms= 0.0 -+x2u1= 0.0 -+x3ms= 10 -+x3u1= 5.0m -+tox=2.00000e-02 -+cgdo=2.0e-10 -+cgso=2.0e-10 -+cgbo=0.0 -+temp= 27 -+vdd= 7.0 -+xpart -+n0= 1.5686 -+nb= 94.6392m -+nd=0.00000e+00 -+rsh=30.0 cj=7.000e-004 cjsw=4.20e-010 -+js=1.00e-008 pb=0.700e000 -+pbsw=0.8000e000 mj=0.5 mjsw=0.33 -+wdf=0 dell=0.20u - -.model M_PSIM_1 pmos level=4 -+vfb= -1.3674 -+phi= .8414 -+k1= 1.5686 -+k2= 203m -+eta= 2m -+muz= 340.0 -+u0= 35.0m -+x2mz= 6.0 -+x2e= 0.0 -+x3e= -0.2m -+x2u0= -15.0m -+mus= 440.0 -+u1= .38 -+x2ms= 0.0 -+x2u1= 0.0 -+x3ms= -20 -+x3u1= -10.0m -+tox=2.00000e-02 -+cgdo=2.0e-10 -+cgso=2.0e-10 -+cgbo=0.0 -+temp= 27 -+vdd= 5.0 -+xpart -+n0= 1.5686 -+nb= 94.6392m -+nd=0.00000e+00 -+rsh=80.0 cj=7.000e-004 cjsw=4.20e-010 -+js=1.00e-008 pb=0.700e000 -+pbsw=0.8000e000 mj=0.5 mjsw=0.33 -+wdf=0 dell=0.17u - -.model M_GNPN npn -+ is=1.3e-16 -+ nf=1.00 bf=262.5 ikf=25mA vaf=20v -+ nr=1.00 br=97.5 ikr=0.5mA var=1.8v -+ rc=20.0 -+ re=0.09 -+ rb=15.0 -+ ise=4.0e-16 ne=2.1 -+ isc=7.2e-17 nc=2.0 -+ tf=9.4ps itf=26uA xtf=0.5 -+ tr=10ns -+ cje=89.44fF vje=0.95 mje=0.5 -+ cjc=12.82fF vjc=0.73 mjc=0.49 - -.model M_GPNP pnp -+ is=5.8e-17 -+ nf=1.001 bf=96.4 ikf=12mA vaf=29v -+ nr=1.0 br=17.3 ikr=0.2mA var=2.0v -+ rc=50.0 -+ re=0.17 -+ rb=20.0 -+ ise=6.8e-17 ne=2.0 -+ isc=9.0e-17 nc=2.1 -+ tf=27.4ps itf=26uA xtf=0.5 -+ tr=10ns -+ cje=55.36fF vje=0.95 mje=0.58 -+ cjc=11.80fF vjc=0.72 mjc=0.46 diff --git a/Windows/spice/examples/cider/parallel/bicmpd.cir b/Windows/spice/examples/cider/parallel/bicmpd.cir deleted file mode 100644 index be26e40d..00000000 --- a/Windows/spice/examples/cider/parallel/bicmpd.cir +++ /dev/null @@ -1,26 +0,0 @@ -BICMOS INVERTER PULLDOWN CIRCUIT - -VSS 2 0 0V - -VIN 3 2 0V (PULSE 0.0V 4.2V 0NS 1NS 1NS 9NS 20NS) - -M1 8 3 5 11 M_NMOS_1 W=4U L=1U -VD 4 8 0V -VBK 11 2 0V - -Q1 10 7 9 M_NPNS AREA=8 -VC 4 10 0V -VB 5 7 0V -VE 9 2 0V - -CL 4 6 1PF -VL 6 2 0V - -.IC V(10)=5.0V V(7)=0.0V -.TRAN 0.1NS 5NS 0NS 0.1NS -.PLOT TRAN I(VIN) - -.INCLUDE BICMOS.LIB - -.OPTIONS ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/parallel/bicmpu.cir b/Windows/spice/examples/cider/parallel/bicmpu.cir deleted file mode 100644 index 7067ce14..00000000 --- a/Windows/spice/examples/cider/parallel/bicmpu.cir +++ /dev/null @@ -1,24 +0,0 @@ -BICMOS INVERTER PULLUP CIRCUIT - -VDD 1 0 5.0V -VSS 2 0 0.0V - -VIN 3 0 0.75V - -VC 1 11 0.0V -VB 5 15 0.0V - -Q1 11 15 4 M_NPNS AREA=8 -M1 5 3 1 1 M_PMOS_1 W=10U L=1U - -CL 4 0 5.0PF - -.IC V(4)=0.75V V(5)=0.0V - -.INCLUDE BICMOS.LIB - -.TRAN 0.5NS 4.0NS -.PRINT TRAN V(3) V(4) - -.OPTION ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/parallel/clkfeed.cir b/Windows/spice/examples/cider/parallel/clkfeed.cir deleted file mode 100644 index d0a06f15..00000000 --- a/Windows/spice/examples/cider/parallel/clkfeed.cir +++ /dev/null @@ -1,34 +0,0 @@ -SWITCHED CURRENT CELL - CLOCK FEEDTHROUGH - -VDD 1 0 5.0V -VSS 2 0 0.0V - -IIN 13 0 0.0 -VIN 13 3 0.0 -VL 4 0 2.5V -VCK 6 0 5.0V PULSE 5.0V 0.0V 5.0NS 5NS 5NS 20NS 50NS - -M1 3 3 2 2 M_NMOS_5 W=5U L=5U -M2 4 5 2 2 M_NMOS_5 W=10U L=5U -M3 23 26 25 22 M_NMOS_5 W=5U L=5U -RLK1 3 0 100G -RLK2 5 0 100G -VD 3 23 0.0V -VG 6 26 0.0V -VS 5 25 0.0V -VB 2 22 0.0V - -M4 7 7 1 1 M_PMOS_IDEAL W=100U L=1U -M5 3 7 1 1 M_PMOS_IDEAL W=100U L=1U -M6 4 7 1 1 M_PMOS_IDEAL W=200U L=1U -IREF 7 0 50UA - -****** MODELS ****** -.MODEL M_PMOS_IDEAL PMOS VTO=-1.0V KP=100U - -.INCLUDE BICMOS.LIB - -.TRAN 0.1NS 50NS - -.OPTIONS ACCT BYPASS=1 METHOD=GEAR -.END diff --git a/Windows/spice/examples/cider/parallel/cmosamp.cir b/Windows/spice/examples/cider/parallel/cmosamp.cir deleted file mode 100644 index f88115b5..00000000 --- a/Windows/spice/examples/cider/parallel/cmosamp.cir +++ /dev/null @@ -1,29 +0,0 @@ -CMOS 2-STAGE OPERATIONAL AMPLIFIER - -VDD 1 0 2.5V -VSS 2 0 -2.5V - -IBIAS 9 0 100UA - -VPL 3 0 0.0V AC 0.5V -VMI 4 0 0.0V AC 0.5V 180 - -M1 6 3 5 5 M_PMOS_1 W=15U L=1U -M2 7 4 5 5 M_PMOS_1 W=15U L=1U -M3 6 6 2 2 M_NMOS_1 W=7.5U L=1U -M4 7 6 2 2 M_NMOS_1 W=7.5U L=1U -M5 8 7 2 2 M_NMOS_1 W=15U L=1U -M6 9 9 1 1 M_PMOS_1 W=15U L=1U -M7 5 9 1 1 M_PMOS_1 W=15U L=1U -M8 8 9 1 1 M_PMOS_1 W=15U L=1U - -*CC 7 8 0.1PF - -.INCLUDE BICMOS.LIB - -*.OP -*.AC DEC 10 1K 100G -.DC VPL -5MV 5MV 0.1MV - -.OPTIONS ACCT BYPASS=1 METHOD=GEAR -.END diff --git a/Windows/spice/examples/cider/parallel/eclinv.cir b/Windows/spice/examples/cider/parallel/eclinv.cir deleted file mode 100644 index a63c1c14..00000000 --- a/Windows/spice/examples/cider/parallel/eclinv.cir +++ /dev/null @@ -1,30 +0,0 @@ -ECL INVERTER -*** (FROM MEINERZHAGEN ET AL.) - -VCC 1 0 0.0V -VEE 2 0 -5.2V - -VIN 3 0 -1.25V -VRF 4 0 -1.25V - -*** INPUT STAGE -Q1 5 3 9 M_NPNS AREA=8 -Q2 6 4 9 M_NPNS AREA=8 -R1 1 5 662 -R2 1 6 662 -R3 9 2 2.65K - -*** OUTPUT BUFFERS -Q3 1 5 7 M_NPNS AREA=8 -Q4 1 6 8 M_NPNS AREA=8 -R4 7 2 4.06K -R5 8 2 4.06K - -*** MODEL LIBRARY -.INCLUDE BICMOS.LIB - -.DC VIN -2.00 0.001 0.05 -.PLOT DC V(7) V(8) - -.OPTIONS ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/parallel/ecpal.cir b/Windows/spice/examples/cider/parallel/ecpal.cir deleted file mode 100644 index 4485a442..00000000 --- a/Windows/spice/examples/cider/parallel/ecpal.cir +++ /dev/null @@ -1,19 +0,0 @@ -EMITTER COUPLED PAIR WITH ACTIVE LOAD - -VCC 1 0 5V -VEE 2 0 0V -VINP 4 0 2.99925V AC 0.5V -VINM 7 0 3V AC 0.5V 180 -IEE 5 2 0.1MA -Q1 3 4 5 M_NPNS AREA=8 -Q2 6 7 5 M_NPNS AREA=8 -Q3 3 3 1 M_PNPS AREA=8 -Q4 6 3 1 M_PNPS AREA=8 - -.AC DEC 10 10K 100G -.PLOT AC VDB(6) - -.INCLUDE BICMOS.LIB - -.OPTIONS ACCT RELTOL=1E-6 -.END diff --git a/Windows/spice/examples/cider/parallel/foobar b/Windows/spice/examples/cider/parallel/foobar deleted file mode 100644 index 1e5e7b73..00000000 --- a/Windows/spice/examples/cider/parallel/foobar +++ /dev/null @@ -1,10 +0,0 @@ -\section*{BICMPD Benchmark} -\section*{BICMPU Benchmark} -\section*{CLKFEED Benchmark} -\section*{CMOSAMP Benchmark} -\section*{ECLINV Benchmark} -\section*{ECPAL Benchmark} -\section*{GMAMP Benchmark} -\section*{LATCH Benchmark} -\section*{PPEF Benchmarks} -\section*{RINGOSC Benchmarks} diff --git a/Windows/spice/examples/cider/parallel/gmamp.cir b/Windows/spice/examples/cider/parallel/gmamp.cir deleted file mode 100644 index e570beca..00000000 --- a/Windows/spice/examples/cider/parallel/gmamp.cir +++ /dev/null @@ -1,34 +0,0 @@ -BICMOS 3-STAGE AMPLIFIER -*** IN GRAY & MEYER, 3RD ED. P.266, PROB. 3.12, 8.19 - -VDD 1 0 5.0V -VSS 2 0 0.0V - -*** VOLTAGE INPUT -*VIN 13 0 0.0V AC 1V -*CIN 13 3 1UF - -*** CURRENT INPUT -IIN 3 0 0.0 AC 1.0 - -M1 4 3 2 2 M_NMOS_1 W=300U L=1U -M2 7 7 2 2 M_NMOS_1 W=20U L=1U - -Q1 6 5 4 M_NPNS AREA=40 -Q2 5 5 7 M_NPNS AREA=40 -Q3 1 6 8 M_NPNS AREA=40 - -RL1 1 4 1K -RL2 1 6 10K -RB1 1 5 10K -RL3 8 2 1K -RF1 3 8 30K - -*** NUMERICAL MODEL LIBRARY *** -.INCLUDE BICMOS.LIB - -.AC DEC 10 100KHZ 100GHZ -.PLOT AC VDB(8) - -.OPTIONS ACCT BYPASS=1 KEEPOPINFO -.END diff --git a/Windows/spice/examples/cider/parallel/latch.cir b/Windows/spice/examples/cider/parallel/latch.cir deleted file mode 100644 index 3ad63335..00000000 --- a/Windows/spice/examples/cider/parallel/latch.cir +++ /dev/null @@ -1,46 +0,0 @@ -STATIC LATCH -*** IC=1MA, RE6=3K -*** SPICE ORIGINAL 1-7-80, CIDER REVISED 4-16-93 - -*** BIAS CIRCUIT -*** RESISTORS -RCC2 6 8 3.33K -REE2 9 0 200 -*** TRANSISTORS -Q1 6 8 4 M_NPN1D AREA=8 -Q2 8 4 9 M_NPN1D AREA=8 - -*** MODELS -.INCLUDE BICMOS.LIB - -*** SOURCES -VCC 6 0 5V -VREF 3 0 2.5V -VRSET 1 0 PULSE(2V 3V 0.1NS 0.1NS 0.1NS 0.9NS 4NS) -VSET 7 0 PULSE(2V 3V 2.1NS 0.1NS 0.1NS 0.9NS 4NS) - -*** LATCH -X1 1 2 3 4 5 6 ECLNOR2 -X2 5 7 3 4 2 6 ECLNOR2 - -*** SUBCIRCUITS -.SUBCKT ECLNOR2 1 2 3 4 5 6 -** RESISTORS -RS 6 11 520 -RC2 11 10 900 -RE4 12 0 200 -RE6 5 0 6K -** TRANSISTORS -Q1 9 1 8 M_NPN1D AREA=8 -Q2 9 2 8 M_NPN1D AREA=8 -Q3 11 3 8 M_NPN1D AREA=8 -Q4 8 4 12 M_NPN1D AREA=8 -Q5 10 10 9 M_NPN1D AREA=8 -Q6 6 9 5 M_NPN1D AREA=8 -.ENDS ECLNOR2 - -*** CONTROL CARDS -.TRAN 0.01NS 8NS -.PRINT TRAN V(1) V(7) V(5) V(2) -.OPTIONS ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/parallel/ppef.1d.cir b/Windows/spice/examples/cider/parallel/ppef.1d.cir deleted file mode 100644 index 8690c665..00000000 --- a/Windows/spice/examples/cider/parallel/ppef.1d.cir +++ /dev/null @@ -1,25 +0,0 @@ -PUSH-PULL EMITTER FOLLOWER - ONE-DIMENSIONAL MODELS - -VCC 1 0 5.0V -VEE 2 0 -5.0V - -VIN 3 0 0.0V (SIN 0.0V 0.1V 1KHZ) AC 1 -VBU 13 3 0.7V -VBL 3 23 0.7V - -RL 4 44 50 -VLD 44 0 0V - -Q1 5 13 4 M_NPN1D AREA=40 -Q2 4 5 1 M_PNP1D AREA=200 - -Q3 6 23 4 M_PNP1D AREA=100 -Q4 4 6 2 M_NPN1D AREA=80 - -.INCLUDE BICMOS.LIB - -.TRAN 0.01MS 1.00001MS 0US 0.01MS -.PLOT TRAN V(4) - -.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5 -.END diff --git a/Windows/spice/examples/cider/parallel/ppef.2d.cir b/Windows/spice/examples/cider/parallel/ppef.2d.cir deleted file mode 100644 index 07fa10fb..00000000 --- a/Windows/spice/examples/cider/parallel/ppef.2d.cir +++ /dev/null @@ -1,25 +0,0 @@ -PUSH-PULL EMITTER FOLLOWER - TWO-DIMENSIONAL MODELS - -VCC 1 0 5.0V -VEE 2 0 -5.0V - -VIN 3 0 0.0V (SIN 0.0V 0.1V 1KHZ) AC 1 -VBU 13 3 0.7V -VBL 3 23 0.7V - -RL 4 44 50 -VLD 44 0 0V - -Q1 5 13 4 M_NPNS AREA=40 -Q2 4 5 1 M_PNPS AREA=200 - -Q3 6 23 4 M_PNPS AREA=100 -Q4 4 6 2 M_NPNS AREA=80 - -.INCLUDE BICMOS.LIB - -.TRAN 0.01MS 1.00001MS 0US 0.01MS -.PLOT TRAN V(4) - -.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5 -.END diff --git a/Windows/spice/examples/cider/parallel/readme b/Windows/spice/examples/cider/parallel/readme deleted file mode 100644 index 077c78f6..00000000 --- a/Windows/spice/examples/cider/parallel/readme +++ /dev/null @@ -1,3 +0,0 @@ -This directory contains the additional CIDER parallel-version benchmarks -used in the thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" -by David A. Gates. diff --git a/Windows/spice/examples/cider/parallel/ringosc.1u.cir b/Windows/spice/examples/cider/parallel/ringosc.1u.cir deleted file mode 100644 index 2304c4eb..00000000 --- a/Windows/spice/examples/cider/parallel/ringosc.1u.cir +++ /dev/null @@ -1,39 +0,0 @@ -CMOS RING OSCILLATOR - 1UM DEVICES - -VDD 1 0 5.0V -VSS 2 0 0.0V - -X1 1 2 3 4 INV -X2 1 2 4 5 INV -X3 1 2 5 6 INV -X4 1 2 6 7 INV -X5 1 2 7 8 INV -X6 1 2 8 9 INV -X7 1 2 9 3 INV - -.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V -+ V(6)=0.0V V(7)=5.0V V(8)=0.0V V(9)=5.0V - -.SUBCKT INV 1 2 3 4 -* VDD VSS VIN VOUT -M1 14 13 15 16 M_PMOS_1 W=6.0U -M2 24 23 25 26 M_NMOS_1 W=3.0U - -VGP 3 13 0.0V -VDP 4 14 0.0V -VSP 1 15 0.0V -VBP 1 16 0.0V - -VGN 3 23 0.0V -VDN 4 24 0.0V -VSN 2 25 0.0V -VBN 2 26 0.0V -.ENDS INV - -.INCLUDE BICMOS.LIB - -.TRAN 0.1NS 1NS -.PRINT TRAN V(3) V(4) V(5) - -.OPTIONS ACCT BYPASS=1 METHOD=GEAR -.END diff --git a/Windows/spice/examples/cider/parallel/ringosc.2u.cir b/Windows/spice/examples/cider/parallel/ringosc.2u.cir deleted file mode 100644 index c79885ab..00000000 --- a/Windows/spice/examples/cider/parallel/ringosc.2u.cir +++ /dev/null @@ -1,114 +0,0 @@ -CMOS RING OSCILLATOR - 2UM DEVICES - -VDD 1 0 5.0V -VSS 2 0 0.0V - -X1 1 2 3 4 INV -X2 1 2 4 5 INV -X3 1 2 5 6 INV -X4 1 2 6 7 INV -X5 1 2 7 8 INV -X6 1 2 8 9 INV -X7 1 2 9 3 INV - -.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V V(6)=0.0V -+ V(7)=5.0V V(8)=0.0V V(9)=5.0V - -.SUBCKT INV 1 2 3 4 -* VDD VSS VIN VOUT -M1 14 13 15 16 M_PMOS W=6.0U -M2 24 23 25 26 M_NMOS W=3.0U - -VGP 3 13 0.0V -VDP 4 14 0.0V -VSP 1 15 0.0V -VBP 1 16 0.0V - -VGN 3 23 0.0V -VDN 4 24 0.0V -VSN 2 25 0.0V -VBN 2 26 0.0V -.ENDS INV - -.MODEL M_NMOS NUMOS -+ X.MESH L=0.0 N=1 -+ X.MESH L=0.6 N=4 -+ X.MESH L=0.7 N=5 -+ X.MESH L=1.0 N=7 -+ X.MESH L=1.2 N=11 -+ X.MESH L=3.2 N=21 -+ X.MESH L=3.4 N=25 -+ X.MESH L=3.7 N=27 -+ X.MESH L=3.8 N=28 -+ X.MESH L=4.4 N=31 -+ -+ Y.MESH L=-.05 N=1 -+ Y.MESH L=0.0 N=5 -+ Y.MESH L=.05 N=9 -+ Y.MESH L=0.3 N=14 -+ Y.MESH L=2.0 N=19 -+ -+ REGION NUM=1 MATERIAL=1 Y.L=0.0 -+ MATERIAL NUM=1 SILICON -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ -+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 -+ MATERIAL NUM=2 OXIDE -+ -+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 -+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 -+ -+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 -+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 -+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 -+ -+ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU -+ METHOD AC=DIRECT ONEC -+ OUTPUT ^ALL.DEBUG - -.MODEL M_PMOS NUMOS -+ X.MESH L=0.0 N=1 -+ X.MESH L=0.6 N=4 -+ X.MESH L=0.7 N=5 -+ X.MESH L=1.0 N=7 -+ X.MESH L=1.2 N=11 -+ X.MESH L=3.2 N=21 -+ X.MESH L=3.4 N=25 -+ X.MESH L=3.7 N=27 -+ X.MESH L=3.8 N=28 -+ X.MESH L=4.4 N=31 -+ -+ Y.MESH L=-.05 N=1 -+ Y.MESH L=0.0 N=5 -+ Y.MESH L=.05 N=9 -+ Y.MESH L=0.3 N=14 -+ Y.MESH L=2.0 N=19 -+ -+ REGION NUM=1 MATERIAL=1 Y.L=0.0 -+ MATERIAL NUM=1 SILICON -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ -+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 -+ MATERIAL NUM=2 OXIDE -+ -+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 -+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 -+ -+ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 -+ DOPING UNIF P.TYPE CONC=3E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 -+ DOPING UNIF P.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 -+ DOPING UNIF P.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 -+ -+ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU -+ METHOD AC=DIRECT ONEC -+ OUTPUT ^ALL.DEBUG - -.TRAN 0.1NS 5.0NS -.PRINT V(4) -.OPTIONS ACCT BYPASS=1 METHOD=GEAR -.END diff --git a/Windows/spice/examples/cider/resistor/gaasres.cir b/Windows/spice/examples/cider/resistor/gaasres.cir deleted file mode 100644 index c35d0ddc..00000000 --- a/Windows/spice/examples/cider/resistor/gaasres.cir +++ /dev/null @@ -1,30 +0,0 @@ -Gallium Arsenide Resistor - -* This transient simulation demonstrates the effects of velocity overshoot -* and velocity saturation at high lateral electric fields. -* Do not try to do DC analysis of this resistor. It will not converge -* because of the peculiar characteristics of the GaAs velocity-field -* relation. In some cases, problems can arise in transient simulation -* as well. - -VPP 1 0 1v PWL 0s 0.0v 10s 1v -VNN 2 0 0.0v -D1 1 2 M_RES AREA=1 - -.MODEL M_RES numd level=1 -+ options resistor defa=1p -+ x.mesh loc=0.0 num=1 -+ x.mesh loc=1.0 num=101 -+ domain num=1 material=1 -+ material num=1 gaas -+ doping unif n.type conc=2.5e16 -+ models fieldmob srh auger conctau -+ method ac=direct - -*.OP -*.DC VPP 0.0v 10.01v 0.1v -.TRAN 1s 10.001s 0s 0.1s -.PRINT I(VPP) - -.OPTION ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/resistor/sires.cir b/Windows/spice/examples/cider/resistor/sires.cir deleted file mode 100644 index 45e2aa12..00000000 --- a/Windows/spice/examples/cider/resistor/sires.cir +++ /dev/null @@ -1,26 +0,0 @@ -Silicon Resistor - -* This simulation demonstrates the effects of velocity saturation at -* high lateral electric fields. - -VPP 1 0 10v PWL 0s 0.0v 100s 10v -VNN 2 0 0.0v -D1 1 2 M_RES AREA=1 - -.MODEL M_RES numd level=1 -+ options resistor defa=1p -+ x.mesh loc=0.0 num=1 -+ x.mesh loc=1.0 num=101 -+ domain num=1 material=1 -+ material num=1 silicon -+ doping unif n.type conc=2.5e16 -+ models bgn srh conctau auger concmob fieldmob -+ method ac=direct - -*.OP -.DC VPP 0.0v 10.01v 0.1v -*.TRAN 1s 100.001s 0s 0.2s -.PRINT I(VPP) - -.OPTION ACCT BYPASS=1 RELTOL=1e-12 -.END diff --git a/Windows/spice/examples/cider/serial/astable.cir b/Windows/spice/examples/cider/serial/astable.cir deleted file mode 100644 index c04c6bba..00000000 --- a/Windows/spice/examples/cider/serial/astable.cir +++ /dev/null @@ -1,30 +0,0 @@ -ASTABLE MULTIVIBRATOR - -VIN 5 0 DC 0 PULSE(0 5 0 1US 1US 100US 100US) -VCC 6 0 5.0 -RC1 6 1 1K -RC2 6 2 1K -RB1 6 3 30K -RB2 5 4 30K -C1 1 4 150PF -C2 2 3 150PF -Q1 1 3 0 QMOD AREA = 100P -Q2 2 4 0 QMOD AREA = 100P - -.OPTION ACCT BYPASS=1 -.TRAN 0.05US 8US 0US 0.05US -.PRINT TRAN V(1) V(2) V(3) V(4) - -.MODEL QMOD NBJT LEVEL=1 -+ X.MESH NODE=1 LOC=0.0 -+ X.MESH NODE=61 LOC=3.0 -+ REGION NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 -+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 -+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB -+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 - -.END diff --git a/Windows/spice/examples/cider/serial/charge.cir b/Windows/spice/examples/cider/serial/charge.cir deleted file mode 100644 index c4c689b6..00000000 --- a/Windows/spice/examples/cider/serial/charge.cir +++ /dev/null @@ -1,53 +0,0 @@ -MOS CHARGE PUMP - -VIN 4 0 DC 0V PULSE 0 5 15NS 5NS 5NS 50NS 100NS -VDD 5 6 DC 0V PULSE 0 5 25NS 5NS 5NS 50NS 100NS -VBB 0 7 DC 0V PULSE 0 5 0NS 5NS 5NS 50NS 100NS -RD 6 2 10K -M1 5 4 3 7 MMOD W=100UM -VS 3 2 0 -VC 2 1 0 -C2 1 0 10PF - -.IC V(3)=1.0 -.TRAN 2NS 200NS -.OPTIONS ACCT BYPASS=1 -.PRINT TRAN V(1) V(2) - -.MODEL MMOD NUMOS -+ X.MESH N=1 L=0 -+ X.MESH N=3 L=0.4 -+ X.MESH N=7 L=0.6 -+ X.MESH N=15 L=1.4 -+ X.MESH N=19 L=1.6 -+ X.MESH N=21 L=2.0 -+ -+ Y.MESH N=1 L=0 -+ Y.MESH N=4 L=0.015 -+ Y.MESH N=8 L=0.05 -+ Y.MESH N=12 L=0.25 -+ Y.MESH N=14 L=0.35 -+ Y.MESH N=17 L=0.5 -+ Y.MESH N=21 L=1.0 -+ -+ REGION NUM=1 MATERIAL=1 Y.L=0.015 -+ MATERIAL NUM=1 SILICON -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ -+ REGION NUM=2 MATERIAL=2 Y.H=0.015 X.L=0.5 X.H=1.5 -+ MATERIAL NUM=2 OXIDE -+ -+ ELEC NUM=1 IX.L=18 IX.H=21 IY.L=4 IY.H=4 -+ ELEC NUM=2 IX.L=5 IX.H=17 IY.L=1 IY.H=1 -+ ELEC NUM=3 IX.L=1 IX.H=4 IY.L=4 IY.H=4 -+ ELEC NUM=4 IX.L=1 IX.H=21 IY.L=21 IY.H=21 -+ -+ DOPING UNIF N.TYPE CONC=1E18 X.L=0.0 X.H=0.5 Y.L=0.015 Y.H=0.25 -+ DOPING UNIF N.TYPE CONC=1E18 X.L=1.5 X.H=2.0 Y.L=0.015 Y.H=0.25 -+ DOPING UNIF P.TYPE CONC=1E15 X.L=0.0 X.H=2.0 Y.L=0.015 Y.H=1.0 -+ DOPING UNIF P.TYPE CONC=1.3E17 X.L=0.5 X.H=1.5 Y.L=0.015 Y.H=0.05 -+ -+ MODELS CONCMOB FIELDMOB -+ METHOD ONEC - -.END diff --git a/Windows/spice/examples/cider/serial/colposc.cir b/Windows/spice/examples/cider/serial/colposc.cir deleted file mode 100644 index b7d14ce9..00000000 --- a/Windows/spice/examples/cider/serial/colposc.cir +++ /dev/null @@ -1,29 +0,0 @@ -COLPITT'S OSCILLATOR CIRCUIT - -R1 1 0 1 -Q1 2 1 3 QMOD AREA = 100P -VCC 4 0 5 -RL 4 2 750 -C1 2 3 500P -C2 4 3 4500P -L1 4 2 5UH -RE 3 6 4.65K -VEE 6 0 DC -15 PWL 0 -15 1E-9 -10 - -.TRAN 30N 12U -.PRINT TRAN V(2) - -.MODEL QMOD NBJT LEVEL=1 -+ X.MESH NODE=1 LOC=0.0 -+ X.MESH NODE=61 LOC=3.0 -+ REGION NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 -+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 -+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB -+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 - -.OPTIONS ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/serial/dbridge.cir b/Windows/spice/examples/cider/serial/dbridge.cir deleted file mode 100644 index 052ae4f0..00000000 --- a/Windows/spice/examples/cider/serial/dbridge.cir +++ /dev/null @@ -1,30 +0,0 @@ -DIODE BRIDGE RECTIFIER - -VLINE 3 4 0.0V SIN 0V 10V 60HZ -VGRND 2 0 0.0V -D1 3 1 M_PN AREA=100 -D2 4 1 M_PN AREA=100 -D3 2 3 M_PN AREA=100 -D4 2 4 M_PN AREA=100 -RL 1 2 1.0K - -.MODEL M_PN NUMD LEVEL=1 -+ *************************************** -+ *** ONE-DIMENSIONAL NUMERICAL DIODE *** -+ *************************************** -+ OPTIONS DEFA=1P -+ X.MESH LOC=0.0 N=1 -+ X.MESH LOC=30.0 N=201 -+ DOMAIN NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON -+ MOBILITY MAT=1 CONCMOD=CT FIELDMOD=CT -+ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.0 CHAR.L=1.0 -+ DOPING UNIF N.TYPE CONC=1E14 X.L=0.0 X.H=30.0 -+ DOPING GAUSS N.TYPE CONC=5E19 X.L=30.0 X.H=30.0 CHAR.L=2.0 -+ MODELS BGN ^AVAL SRH AUGER CONCTAU CONCMOB FIELDMOB -+ METHOD AC=DIRECT - -.OPTION ACCT BYPASS=1 METHOD=GEAR -.TRAN 0.5MS 50MS -.PRINT I(VLINE) -.END diff --git a/Windows/spice/examples/cider/serial/invchain.cir b/Windows/spice/examples/cider/serial/invchain.cir deleted file mode 100644 index c05513a0..00000000 --- a/Windows/spice/examples/cider/serial/invchain.cir +++ /dev/null @@ -1,34 +0,0 @@ -4 STAGE RTL INVERTER CHAIN - -VIN 1 0 DC 0V PWL 0NS 0V 1NS 5V -VCC 12 0 DC 5.0V -RC1 12 3 2.5K -RB1 1 2 8K -Q1 3 2 0 QMOD AREA = 100P -RB2 3 4 8K -RC2 12 5 2.5K -Q2 5 4 0 QMOD AREA = 100P -RB3 5 6 8K -RC3 12 7 2.5K -Q3 7 6 0 QMOD AREA = 100P -RB4 7 8 8K -RC4 12 9 2.5K -Q4 9 8 0 QMOD AREA = 100P - -.PRINT TRAN V(3) V(5) V(9) -.TRAN 1E-9 10E-9 - -.MODEL QMOD NBJT LEVEL=1 -+ X.MESH NODE=1 LOC=0.0 -+ X.MESH NODE=61 LOC=3.0 -+ REGION NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 -+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 -+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB -+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 - -.OPTION ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/serial/meclgate.cir b/Windows/spice/examples/cider/serial/meclgate.cir deleted file mode 100644 index 7f5e88ba..00000000 --- a/Windows/spice/examples/cider/serial/meclgate.cir +++ /dev/null @@ -1,70 +0,0 @@ -MOTOROLA MECL III ECL GATE -*.DC VIN -2.0 0 0.02 -.TRAN 0.2NS 20NS -VEE 22 0 -6.0 -VIN 1 0 PULSE -0.8 -1.8 0.2NS 0.2NS 0.2NS 10NS 20NS -RS 1 2 50 -Q1 4 2 6 QMOD AREA = 100P -Q2 4 3 6 QMOD AREA = 100P -Q3 5 7 6 QMOD AREA = 100P -Q4 0 8 7 QMOD AREA = 100P - -D1 8 9 DMOD -D2 9 10 DMOD - -RP1 3 22 50K -RC1 0 4 100 -RC2 0 5 112 -RE 6 22 380 -R1 7 22 2K -R2 0 8 350 -R3 10 22 1958 - -Q5 0 5 11 QMOD AREA = 100P -Q6 0 4 12 QMOD AREA = 100P - -RP2 11 22 560 -RP3 12 22 560 - -Q7 13 12 15 QMOD AREA = 100P -Q8 14 16 15 QMOD AREA = 100P - -RE2 15 22 380 -RC3 0 13 100 -RC4 0 14 112 - -Q9 0 17 16 QMOD AREA = 100P - -R4 16 22 2K -R5 0 17 350 -D3 17 18 DMOD -D4 18 19 DMOD -R6 19 22 1958 - -Q10 0 14 20 QMOD AREA = 100P -Q11 0 13 21 QMOD AREA = 100P - -RP4 20 22 560 -RP5 21 22 560 - -.MODEL DMOD D RS=40 TT=0.1NS CJO=0.9PF N=1 IS=1E-14 EG=1.11 VJ=0.8 M=0.5 - -.MODEL QMOD NBJT LEVEL=1 -+ X.MESH NODE=1 LOC=0.0 -+ X.MESH NODE=10 LOC=0.9 -+ X.MESH NODE=20 LOC=1.1 -+ X.MESH NODE=30 LOC=1.4 -+ X.MESH NODE=40 LOC=1.6 -+ X.MESH NODE=61 LOC=3.0 -+ REGION NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 -+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 -+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB -+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 - -.OPTIONS ACCT BYPASS=1 -.PRINT TRAN V(12) V(21) -.END diff --git a/Windows/spice/examples/cider/serial/nmosinv.cir b/Windows/spice/examples/cider/serial/nmosinv.cir deleted file mode 100644 index b6fa11ab..00000000 --- a/Windows/spice/examples/cider/serial/nmosinv.cir +++ /dev/null @@ -1,51 +0,0 @@ -RESISTIVE LOAD NMOS INVERTER -VIN 1 0 PWL 0 0.0 2NS 5 -VDD 3 0 DC 5.0 -RD 3 2 2.5K -M1 2 1 4 5 MMOD W=10UM -CL 2 0 2PF -VB 5 0 0 -VS 4 0 0 - -.MODEL MMOD NUMOS -+ X.MESH L=0.0 N=1 -+ X.MESH L=0.6 N=4 -+ X.MESH L=0.7 N=5 -+ X.MESH L=1.0 N=7 -+ X.MESH L=1.2 N=11 -+ X.MESH L=3.2 N=21 -+ X.MESH L=3.4 N=25 -+ X.MESH L=3.7 N=27 -+ X.MESH L=3.8 N=28 -+ X.MESH L=4.4 N=31 -+ -+ Y.MESH L=-.05 N=1 -+ Y.MESH L=0.0 N=5 -+ Y.MESH L=.05 N=9 -+ Y.MESH L=0.3 N=14 -+ Y.MESH L=2.0 N=19 -+ -+ REGION NUM=1 MATERIAL=1 Y.L=0.0 -+ MATERIAL NUM=1 SILICON -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ -+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 -+ MATERIAL NUM=2 OXIDE -+ -+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 -+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 -+ -+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 -+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 -+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 -+ -+ MODELS CONCMOB FIELDMOB -+ METHOD AC=DIRECT ONEC - -.TRAN 0.2NS 30NS -.OPTIONS ACCT BYPASS=1 -.PRINT TRAN V(1) V(2) -.END diff --git a/Windows/spice/examples/cider/serial/pass.cir b/Windows/spice/examples/cider/serial/pass.cir deleted file mode 100644 index a15a6f61..00000000 --- a/Windows/spice/examples/cider/serial/pass.cir +++ /dev/null @@ -1,55 +0,0 @@ -TURNOFF TRANSIENT OF PASS TRANSISTOR - -M1 11 2 3 4 MMOD W=20UM -CS 1 0 6.0PF -CL 3 0 6.0PF -R1 3 6 200K -VIN 6 0 DC 0 -VDRN 1 11 DC 0 -VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0 -VB 4 0 DC 0.0 - -.TRAN 0.05NS 0.2NS 0.0NS 0.05NS -.PRINT TRAN V(1) I(VDRN) -.IC V(1)=0 V(3)=0 -.OPTION ACCT BYPASS=1 - -.MODEL MMOD NUMOS -+ X.MESH L=0.0 N=1 -+ X.MESH L=0.6 N=4 -+ X.MESH L=0.7 N=5 -+ X.MESH L=1.0 N=7 -+ X.MESH L=1.2 N=11 -+ X.MESH L=3.2 N=21 -+ X.MESH L=3.4 N=25 -+ X.MESH L=3.7 N=27 -+ X.MESH L=3.8 N=28 -+ X.MESH L=4.4 N=31 -+ -+ Y.MESH L=-.05 N=1 -+ Y.MESH L=0.0 N=5 -+ Y.MESH L=.05 N=9 -+ Y.MESH L=0.3 N=14 -+ Y.MESH L=2.0 N=19 -+ -+ REGION NUM=1 MATERIAL=1 Y.L=0.0 -+ MATERIAL NUM=1 SILICON -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ -+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 -+ MATERIAL NUM=2 OXIDE -+ -+ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 -+ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 -+ -+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 -+ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 -+ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 -+ -+ MODELS CONCMOB FIELDMOB -+ METHOD AC=DIRECT ONEC - -.END diff --git a/Windows/spice/examples/cider/serial/pullup.cir b/Windows/spice/examples/cider/serial/pullup.cir deleted file mode 100644 index a4d7a4d1..00000000 --- a/Windows/spice/examples/cider/serial/pullup.cir +++ /dev/null @@ -1,67 +0,0 @@ -BICMOS INVERTER PULLUP CIRCUIT - -VDD 1 0 5.0V -VSS 2 0 0.0V - -VIN 3 0 0.75V - -VC 1 11 0.0V -VB 5 15 0.0V - -Q1 11 15 4 M_NPN AREA=4 -M1 5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U - -CL 4 0 5.0PF - -.IC V(4)=0.75V V(5)=0.0V - -.MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16 -+ UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U -+ LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5 -+ CJSW=0.3N MJSW=0.5 LEVEL=2 - -.MODEL M_NPN NBJT LEVEL=2 -+ TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET -+ $ 1.0 UM EMITTER. -+ OPTIONS DEFW=2.0U -+ OUTPUT STATISTICS -+ -+ X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0 -+ X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0 -+ -+ Y.MESH L=-0.2 N=1 -+ Y.MESH L= 0.0 N=5 -+ Y.MESH W=0.10 H.E=0.004 H.M=0.05 R=2.5 -+ Y.MESH W=0.15 H.S=0.004 H.M=0.02 R=2.5 -+ Y.MESH W=1.05 H.S=0.02 H.M=0.1 R=2.5 -+ -+ DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0 -+ DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0 -+ DOMAIN NUM=3 MATERIAL=3 Y.L=0.0 -+ MATERIAL NUM=1 POLYSILICON -+ MATERIAL NUM=2 OXIDE -+ MATERIAL NUM=3 SILICON -+ -+ ELEC NUM=1 X.L=0.0 X.H=0.0 Y.L=1.1 Y.H=1.3 -+ ELEC NUM=2 X.L=0.0 X.H=0.5 Y.L=0.0 Y.H=0.0 -+ ELEC NUM=3 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=-0.2 -+ -+ DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0 -+ + CHAR.L=0.047 LAT.ROTATE -+ DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0 -+ + CHAR.L=0.100 LAT.ROTATE -+ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0 -+ + CHAR.L=0.100 LAT.ROTATE RATIO=0.7 -+ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3 -+ DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3 -+ + CHAR.L=0.100 LAT.ROTATE -+ -+ METHOD AC=DIRECT ITLIM=10 -+ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB - -.TRAN 0.5NS 4.0NS -.PRINT TRAN V(3) V(4) - -.OPTION ACCT BYPASS=1 -.END diff --git a/Windows/spice/examples/cider/serial/readme b/Windows/spice/examples/cider/serial/readme deleted file mode 100644 index 08f29304..00000000 --- a/Windows/spice/examples/cider/serial/readme +++ /dev/null @@ -1,3 +0,0 @@ -This directory contains the CIDER serial-version benchmarks used in the -thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" by -David A. Gates. diff --git a/Windows/spice/examples/cider/serial/recovery.cir b/Windows/spice/examples/cider/serial/recovery.cir deleted file mode 100644 index cd33be1e..00000000 --- a/Windows/spice/examples/cider/serial/recovery.cir +++ /dev/null @@ -1,40 +0,0 @@ -DIODE REVERSE RECOVERY - -VPP 1 0 0.0V (PULSE 1.0V -1.0V 1NS 1PS 1PS 20NS 40NS) -VNN 2 0 0.0V -RS 1 3 1.0 -LS 3 4 0.5UH -DT 4 2 M_PIN AREA=1 - -.MODEL M_PIN NUMD LEVEL=2 -+ OPTIONS DEFW=100U -+ X.MESH N=1 L=0.0 -+ X.MESH N=2 L=0.2 -+ X.MESH N=4 L=0.4 -+ X.MESH N=8 L=0.6 -+ X.MESH N=13 L=1.0 -+ -+ Y.MESH N=1 L=0.0 -+ Y.MESH N=9 L=4.0 -+ Y.MESH N=24 L=10.0 -+ Y.MESH N=29 L=15.0 -+ Y.MESH N=34 L=20.0 -+ -+ DOMAIN NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON TN=20NS TP=20NS -+ -+ ELECTRODE NUM=1 X.L=0.6 X.H=1.0 Y.L=0.0 Y.H=0.0 -+ ELECTRODE NUM=2 X.L=-0.1 X.H=1.0 Y.L=20.0 Y.H=20.0 -+ -+ DOPING GAUSS P.TYPE CONC=1.0E19 CHAR.LEN=1.076 X.L=0.75 X.H=1.1 Y.H=0.0 -+ + LAT.ROTATE RATIO=0.1 -+ DOPING UNIF N.TYPE CONC=1.0E14 -+ DOPING GAUSS N.TYPE CONC=1.0E19 CHAR.LEN=1.614 X.L=-0.1 X.H=1.1 Y.L=20.0 -+ -+ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB - -.OPTION ACCT BYPASS=1 -.TRAN 0.1NS 10NS -.PRINT TRAN V(3) I(VIN) - -.END diff --git a/Windows/spice/examples/cider/serial/rtlinv.cir b/Windows/spice/examples/cider/serial/rtlinv.cir deleted file mode 100644 index ef0dd94d..00000000 --- a/Windows/spice/examples/cider/serial/rtlinv.cir +++ /dev/null @@ -1,25 +0,0 @@ -RTL INVERTER - -VIN 1 0 DC 1 PWL 0 4 1NS 0 -VCC 12 0 DC 5.0 -RC1 12 3 2.5K -RB1 1 2 8K -Q1 3 2 0 QMOD AREA = 100P - -.OPTION ACCT BYPASS=1 -.TRAN 0.5N 5N -.PRINT TRAN V(2) V(3) - -.MODEL QMOD NBJT LEVEL=1 -+ X.MESH NODE=1 LOC=0.0 -+ X.MESH NODE=61 LOC=3.0 -+ REGION NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 -+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 -+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB -+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 - -.END diff --git a/Windows/spice/examples/cider/serial/vco.cir b/Windows/spice/examples/cider/serial/vco.cir deleted file mode 100644 index 852ddd7f..00000000 --- a/Windows/spice/examples/cider/serial/vco.cir +++ /dev/null @@ -1,41 +0,0 @@ -VOLTAGE CONTROLLED OSCILLATOR - -RC1 7 5 1K -RC2 7 6 1K - -Q5 7 7 5 QMOD AREA = 100P -Q6 7 7 6 QMOD AREA = 100P - -Q3 7 5 2 QMOD AREA = 100P -Q4 7 6 1 QMOD AREA = 100P - -IB1 2 0 .5MA -IB2 1 0 .5MA -CB1 2 0 1PF -CB2 1 0 1PF - -Q1 5 1 3 QMOD AREA = 100P -Q2 6 2 4 QMOD AREA = 100P - -C1 3 4 .1UF - -IS1 3 0 DC 2.5MA PULSE 2.5MA 0.5MA 0 1US 1US 50MS -IS2 4 0 1MA -VCC 7 0 10 - -.MODEL QMOD NBJT LEVEL=1 -+ X.MESH NODE=1 LOC=0.0 -+ X.MESH NODE=61 LOC=3.0 -+ REGION NUM=1 MATERIAL=1 -+ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 -+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG -+ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 -+ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 -+ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 -+ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB -+ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 - -.OPTION ACCT BYPASS=1 -.TRAN 3US 600US 0 3US -.PRINT TRAN V(4) -.END |