diff options
| author | rahulp13 | 2020-02-28 11:38:58 +0530 |
|---|---|---|
| committer | rahulp13 | 2020-02-28 11:38:58 +0530 |
| commit | 246319682f60293b132fca1ce6e24689c6682617 (patch) | |
| tree | 6871b758a17869efecfd617f5513e31f9a933f4a /Windows/spice/examples/cider | |
| parent | d9ab84106cac311d953f344386fef1c1e2bca1cf (diff) | |
| download | eSim-246319682f60293b132fca1ce6e24689c6682617.tar.gz eSim-246319682f60293b132fca1ce6e24689c6682617.tar.bz2 eSim-246319682f60293b132fca1ce6e24689c6682617.zip | |
initial commit
Diffstat (limited to 'Windows/spice/examples/cider')
51 files changed, 3134 insertions, 0 deletions
diff --git a/Windows/spice/examples/cider/bicmos/bicmos.lib b/Windows/spice/examples/cider/bicmos/bicmos.lib new file mode 100644 index 00000000..cc1eb20d --- /dev/null +++ b/Windows/spice/examples/cider/bicmos/bicmos.lib @@ -0,0 +1,127 @@ +.MODEL M_NPN nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since, we are only simulating half of a device, we double the unit width ++ * 1.0 um emitter length ++ options defw=2.0u ++ output dc.debug stat ++ ++ *x.mesh w=2.5 n=5 ++ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.094 lat.rotate ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_NMOS_1 numos ++ output dc.debug stat ++ title 1.0um NMOS Device ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob fieldmob surfmob srh auger conctau bgn ^aval ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_1 numos ++ title 1.0um PMOS Device ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob fieldmob surfmob srh auger conctau bgn ^aval ++ method ac=direct itlim=10 onec diff --git a/Windows/spice/examples/cider/bicmos/bicmpd.cir b/Windows/spice/examples/cider/bicmos/bicmpd.cir new file mode 100644 index 00000000..8096b49b --- /dev/null +++ b/Windows/spice/examples/cider/bicmos/bicmpd.cir @@ -0,0 +1,26 @@ +BiCMOS Pulldown Circuit + +VSS 2 0 0v + +VIN 3 2 0v (PULSE 0.0v 4.2v 0ns 1ns 1ns 9ns 20ns) + +M1 8 3 5 11 M_NMOS_1 W=4u L=1u +VD 4 8 0v +VBK 11 2 0v + +Q1 10 7 9 M_NPN AREA=8 +VC 4 10 0v +VB 5 7 0v +VE 9 2 0v + +CL 4 6 1pF +VL 6 2 0v + +.IC V(10)=5.0v V(7)=0.0v +.TRAN 0.1ns 5ns 0ns 0.1ns +.PLOT TRAN I(VIN) + +.include bicmos.lib + +.OPTIONS ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/bjt/astable.cir b/Windows/spice/examples/cider/bjt/astable.cir new file mode 100644 index 00000000..bdb4a8a8 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/astable.cir @@ -0,0 +1,34 @@ +Astable multivibrator + +vin 5 0 dc 0 pulse(0 5 0 1us 1us 100us 100us) +vcc 6 0 5.0 +rc1 6 1 1k +rc2 6 2 1k +rb1 6 3 30k +rb2 5 4 30k +c1 1 4 150pf +c2 2 3 150pf +q1 1 3 0 qmod area = 100p +q2 2 4 0 qmod area = 100p + +.option acct bypass=1 +.tran 0.05us 8us 0us 0.05us +.print tran v(1) v(2) v(3) v(4) + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.end diff --git a/Windows/spice/examples/cider/bjt/colposc.cir b/Windows/spice/examples/cider/bjt/colposc.cir new file mode 100644 index 00000000..bd4d31fa --- /dev/null +++ b/Windows/spice/examples/cider/bjt/colposc.cir @@ -0,0 +1,33 @@ +Colpitt's Oscillator Circuit + +r1 1 0 1 +q1 2 1 3 qmod area = 100p +vcc 4 0 5 +rl 4 2 750 +c1 2 3 500p +c2 4 3 4500p +l1 4 2 5uH +re 3 6 4.65k +vee 6 0 dc -15 pwl 0 -15 1e-9 -10 + +.tran 30n 12u +.print tran v(2) + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.options acct bypass=1 +.end diff --git a/Windows/spice/examples/cider/bjt/ecp.cir b/Windows/spice/examples/cider/bjt/ecp.cir new file mode 100644 index 00000000..6fb2bda9 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/ecp.cir @@ -0,0 +1,57 @@ +Emitter Coupled Pair + +VCC 1 0 5v +VEE 2 0 0v +RCP 1 11 10k +RCN 1 21 10k +VBBP 12 0 3v AC 1 +VBBN 22 0 3v +IEE 13 2 0.1mA +Q1 11 12 13 M_NPN AREA=8 +Q2 21 22 13 M_NPN AREA=8 + +.DC VBBP 2.75v 3.25001v 10mv +.PRINT V(21) V(11) + +.MODEL M_NPN nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since, we are only simulating half of a device, we double the unit width ++ * 1.0 um emitter length ++ options defw=2.0u ++ ++ *x.mesh w=2.5 n=5 ++ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.094 lat.rotate ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.OPTIONS ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/bjt/invchain.cir b/Windows/spice/examples/cider/bjt/invchain.cir new file mode 100644 index 00000000..92c6fad8 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/invchain.cir @@ -0,0 +1,38 @@ +4 Stage RTL Inverter Chain + +vin 1 0 dc 0v pwl 0ns 0v 1ns 5v +vcc 12 0 dc 5.0v +rc1 12 3 2.5k +rb1 1 2 8k +q1 3 2 0 qmod area = 100p +rb2 3 4 8k +rc2 12 5 2.5k +q2 5 4 0 qmod area = 100p +rb3 5 6 8k +rc3 12 7 2.5k +q3 7 6 0 qmod area = 100p +rb4 7 8 8k +rc4 12 9 2.5k +q4 9 8 0 qmod area = 100p + +.print tran v(3) v(5) v(9) +.tran 1e-9 10e-9 + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.option acct bypass=1 +.end diff --git a/Windows/spice/examples/cider/bjt/meclgate.cir b/Windows/spice/examples/cider/bjt/meclgate.cir new file mode 100644 index 00000000..33542d5d --- /dev/null +++ b/Windows/spice/examples/cider/bjt/meclgate.cir @@ -0,0 +1,74 @@ +Motorola MECL III ECL gate +*.dc vin -2.0 0 0.02 +.tran 0.2ns 20ns +vee 22 0 -6.0 +vin 1 0 pulse -0.8 -1.8 0.2ns 0.2ns 0.2ns 10ns 20ns +rs 1 2 50 +q1 4 2 6 qmod area = 100p +q2 4 3 6 qmod area = 100p +q3 5 7 6 qmod area = 100p +q4 0 8 7 qmod area = 100p + +d1 8 9 dmod +d2 9 10 dmod + +rp1 3 22 50k +rc1 0 4 100 +rc2 0 5 112 +re 6 22 380 +r1 7 22 2k +r2 0 8 350 +r3 10 22 1958 + +q5 0 5 11 qmod area = 100p +q6 0 4 12 qmod area = 100p + +rp2 11 22 560 +rp3 12 22 560 + +q7 13 12 15 qmod area = 100p +q8 14 16 15 qmod area = 100p + +re2 15 22 380 +rc3 0 13 100 +rc4 0 14 112 + +q9 0 17 16 qmod area = 100p + +r4 16 22 2k +r5 0 17 350 +d3 17 18 dmod +d4 18 19 dmod +r6 19 22 1958 + +q10 0 14 20 qmod area = 100p +q11 0 13 21 qmod area = 100p + +rp4 20 22 560 +rp5 21 22 560 + +.model dmod d rs=40 tt=0.1ns cjo=0.9pf n=1 is=1e-14 eg=1.11 vj=0.8 m=0.5 + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=10 loc=0.9 ++ x.mesh node=20 loc=1.1 ++ x.mesh node=30 loc=1.4 ++ x.mesh node=40 loc=1.6 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.options acct bypass=1 +.print tran v(12) v(21) +.end diff --git a/Windows/spice/examples/cider/bjt/pebjt.lib b/Windows/spice/examples/cider/bjt/pebjt.lib new file mode 100644 index 00000000..afbdb36c --- /dev/null +++ b/Windows/spice/examples/cider/bjt/pebjt.lib @@ -0,0 +1,71 @@ +** +* Numerical models for a +* polysilicon emitter complementary bipolar process. +* The default device size is 1um by 10um (LxW) +** + +.model M_NPN nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 ac=direct itlim=15 + +.model M_NPSUB numd level=1 ++ title One-Dimensional Numerical Collector-Substrate Diode ++ options defa=10p ++ x.mesh loc=1.3 n=1 ++ x.mesh loc=2.0 n=101 ++ domain num=1 material=1 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 itlim=10 + +.model M_PNP nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 ac=direct itlim=15 + +.model M_PNSUB numd level=1 ++ title One-Dimensional Numerical Collector-Substrate Diode ++ options defa=10p ++ x.mesh loc=1.3 n=1 ++ x.mesh loc=2.0 n=101 ++ domain num=1 material=1 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=2.0 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 itlim=10 diff --git a/Windows/spice/examples/cider/bjt/pz.cir b/Windows/spice/examples/cider/bjt/pz.cir new file mode 100644 index 00000000..ad3ee675 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/pz.cir @@ -0,0 +1,16 @@ +PZ Analysis of a Common Emitter Amplifier + +Vcc 1 0 5v +Vee 2 0 0v + +Vin 3 0 0.7838 AC 1 +RS 3 4 1K +Q1 5 4 2 M_NPN AREA=4 SAVE +RL 1 5 2.5k +CL 5 0 0.1pF + +.INCLUDE pebjt.lib + +.PZ 3 0 5 0 vol pz + +.END diff --git a/Windows/spice/examples/cider/bjt/rtlinv.cir b/Windows/spice/examples/cider/bjt/rtlinv.cir new file mode 100644 index 00000000..f45eb983 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/rtlinv.cir @@ -0,0 +1,29 @@ +RTL inverter + +vin 1 0 dc 1 pwl 0 4 1ns 0 +vcc 12 0 dc 5.0 +rc1 12 3 2.5k +rb1 1 2 8k +q1 3 2 0 qmod area = 100p + +.option acct bypass=1 +.tran 0.5n 5n +.print tran v(2) v(3) + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.end diff --git a/Windows/spice/examples/cider/bjt/vco.cir b/Windows/spice/examples/cider/bjt/vco.cir new file mode 100644 index 00000000..d1b1a058 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/vco.cir @@ -0,0 +1,45 @@ +Voltage controlled oscillator + +rc1 7 5 1k +rc2 7 6 1k + +q5 7 7 5 qmod area = 100p +q6 7 7 6 qmod area = 100p + +q3 7 5 2 qmod area = 100p +q4 7 6 1 qmod area = 100p + +ib1 2 0 .5ma +ib2 1 0 .5ma +cb1 2 0 1pf +cb2 1 0 1pf + +q1 5 1 3 qmod area = 100p +q2 6 2 4 qmod area = 100p + +c1 3 4 .1uf + +is1 3 0 dc 2.5ma pulse 2.5ma 0.5ma 0 1us 1us 50ms +is2 4 0 1ma +vcc 7 0 10 + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.option acct bypass=1 +.tran 3us 600us 0 3us +.print tran v(4) +.end diff --git a/Windows/spice/examples/cider/diode/diode.cir b/Windows/spice/examples/cider/diode/diode.cir new file mode 100644 index 00000000..e0ace324 --- /dev/null +++ b/Windows/spice/examples/cider/diode/diode.cir @@ -0,0 +1,35 @@ +One-Dimensional Diode Simulation + +* Several simulations are performed by this file. +* They are: +* 1. An operating point at 0.7v forward bias. +* 2. An ac analysis at 0.7v forward bias. +* 3. The forward and reverse bias characteristics from -3v to 2v. + +Vpp 1 0 0.7v (PWL 0ns 3.0v 0.01ns -6.0v) (AC 1v) +Vnn 2 0 0v +D1 1 2 M_PN AREA=100 + +.model M_PN numd level=1 ++ *************************************** ++ *** One-Dimensional Numerical Diode *** ++ *************************************** ++ options defa=1p ++ x.mesh loc=0.0 n=1 ++ x.mesh loc=1.3 n=201 ++ domain num=1 material=1 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.0 char.l=0.100 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.l=0.100 ++ models bgn aval srh auger conctau concmob fieldmob ++ method ac=direct + +.option acct bypass=0 abstol=1e-18 itl2=100 +.op +.ac dec 10 100kHz 10gHz +.dc Vpp -3.0v 2.0001v 50mv +.print i(Vpp) + +.END diff --git a/Windows/spice/examples/cider/diode/diotran.cir b/Windows/spice/examples/cider/diode/diotran.cir new file mode 100644 index 00000000..110d2550 --- /dev/null +++ b/Windows/spice/examples/cider/diode/diotran.cir @@ -0,0 +1,31 @@ +Diode Reverse Recovery + +* This file simulates reverse recovery of a diode as it switched from an +* on to off state. + +Vpp 1 0 0.7v (PWL 0ns 3.0v 0.1ns 3.0v 0.11ns -6.0v) (AC 1v) +Vnn 2 0 0v +R1 1 3 1k +D1 3 2 M_PN area=100 + +.MODEL M_PN numd level=1 ++ *************************************** ++ *** One-Dimensional Numerical Diode *** ++ *************************************** ++ options defa=1p ++ x.mesh loc=0.0 n=1 ++ x.mesh loc=1.3 n=201 ++ domain num=1 material=1 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ doping gauss p.type conc=3e20 x.l=0.0 x.h=0.0 char.l=0.100 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.l=0.100 ++ models bgn aval srh auger conctau concmob fieldmob ++ method ac=direct + +.option acct bypass=1 abstol=1e-15 itl2=100 +.tran 0.001ns 1.0ns +.print i(Vpp) + +.END diff --git a/Windows/spice/examples/cider/diode/pindiode.cir b/Windows/spice/examples/cider/diode/pindiode.cir new file mode 100644 index 00000000..1eb18b42 --- /dev/null +++ b/Windows/spice/examples/cider/diode/pindiode.cir @@ -0,0 +1,42 @@ +TWO-DIMENSIONAL PIN-DIODE CIRCUIT + +VIN 1 0 0.0v (PWL 0ns 0.8v 1ns -50.0v) +L1 1 2 0.5uH +VD 2 3 0.0v +D1 3 0 M_PIN AREA=200 IC.FILE="OP.0.d1" +VRC 2 4 0.0v +R1 4 5 100 +C1 5 0 1.0nF + +.MODEL M_PIN NUMD LEVEL=2 ++ options defw=1000u ++ x.mesh n=1 l=0.0 ++ x.mesh n=2 l=0.2 ++ x.mesh n=4 l=0.4 ++ x.mesh n=8 l=0.6 ++ x.mesh n=13 l=1.0 ++ ++ y.mesh n=1 l=0.0 ++ y.mesh n=9 l=4.0 ++ y.mesh n=24 l=10.0 ++ y.mesh n=29 l=15.0 ++ y.mesh n=34 l=20.0 ++ ++ domain num=1 material=1 ++ material num=1 silicon tn=20ns tp=20ns ++ ++ electrode num=1 x.l=0.6 x.h=1.0 y.h=0.0 ++ electrode num=2 y.l=20.0 ++ ++ doping gauss p.type conc=1.0e20 char.len=1.076 x.l=0.75 x.h=1.1 y.h=0.0 ++ + lat.rotate ratio=0.1 ++ doping unif n.type conc=1.0e14 ++ doping gauss n.type conc=1.0e20 char.len=1.614 x.l=-0.1 x.h=1.1 y.l=20.0 ++ ++ models bgn srh auger conctau concmob fieldmob + +.OPTION ACCT BYPASS=1 +.TRAN 1NS 100NS +.PRINT TRAN v(3) I(VIN) + +.END diff --git a/Windows/spice/examples/cider/jfet/jfet.cir b/Windows/spice/examples/cider/jfet/jfet.cir new file mode 100644 index 00000000..e3f00536 --- /dev/null +++ b/Windows/spice/examples/cider/jfet/jfet.cir @@ -0,0 +1,36 @@ +Two-dimensional Junction Field-Effect Transistor (JFET) + +VDD 1 0 0.5V +VGG 2 0 -1.0v AC 1V +VSS 3 0 0.0V +QJ1 1 2 3 M_NJF AREA=1 + +.MODEL M_NJF NBJT LEVEL=2 ++ options jfet defw=10.0um ++ output dc.debug phin phip equ.psi vac.psi ++ x.mesh w=0.2 h.e=0.001 r=1.8 ++ x.mesh w=0.8 h.s=0.001 h.m=0.1 r=2.0 ++ x.mesh w=0.8 h.e=0.001 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.s=0.001 r=1.8 ++ y.mesh w=0.2 h.e=0.01 r=1.8 ++ y.mesh w=0.8 h.s=0.01 h.m=0.1 r=1.8 ++ ++ domain num=1 mat=1 ++ material num=1 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=0.0 y.h=1.0 ++ elec num=2 x.l=0.5 x.h=1.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=2.0 y.l=0.0 y.h=1.0 ++ ++ doping unif n.type conc=3.0e15 ++ doping unif p.type conc=2.0e17 x.l=0.2 x.h=1.8 y.h=0.2 ++ ++ models bgn srh auger conctau concmob fieldmob ^aval + +.option acct bypass=1 temp=27 +*.op +.dc vgg 0.0 -2.0001 -0.1 +*.ac dec 10 1k 100g +.print i(vnn) + +.end diff --git a/Windows/spice/examples/cider/mos/bootinv.cir b/Windows/spice/examples/cider/mos/bootinv.cir new file mode 100644 index 00000000..4c2ea40d --- /dev/null +++ b/Windows/spice/examples/cider/mos/bootinv.cir @@ -0,0 +1,59 @@ +NMOS Enhancement-Load Bootstrap Inverter + +Vdd 1 0 5.0v +Vss 2 0 0.0v + +Vin 5 0 0.0v PWL (0.0ns 5.0v) (1ns 0.0v) (10ns 0.0v) (11ns 5.0v) ++ (20ns 5.0v) (21ns 0.0v) (30ns 0.0v) (31ns 5.0v) +M1 1 1 3 2 M_NMOS w=5u +M2 1 3 4 4 M_NMOS w=5u +M3 4 5 2 2 M_NMOS w=5u +CL 4 0 0.1pf +CB 3 4 0.1pf + +.model M_NMOS numos ++ x.mesh l=0.0 n=1 ++ x.mesh l=0.6 n=4 ++ x.mesh l=0.7 n=5 ++ x.mesh l=1.0 n=7 ++ x.mesh l=1.2 n=11 ++ x.mesh l=3.2 n=21 ++ x.mesh l=3.4 n=25 ++ x.mesh l=3.7 n=27 ++ x.mesh l=3.8 n=28 ++ x.mesh l=4.4 n=31 ++ ++ y.mesh l=-.05 n=1 ++ y.mesh l=0.0 n=5 ++ y.mesh l=.05 n=9 ++ y.mesh l=0.3 n=14 ++ y.mesh l=2.0 n=19 ++ ++ region num=1 material=1 y.l=0.0 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 init elec major ++ mobility material=1 init elec minor ++ mobility material=1 init hole major ++ mobility material=1 init hole minor ++ ++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 ++ material num=2 oxide ++ ++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 ++ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 ++ ++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 ++ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 ++ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 ++ ++ models concmob fieldmob ++ method ac=direct onec + +.tran 0.2ns 40ns +.print v(4) +.options acct bypass=1 method=gear +.end diff --git a/Windows/spice/examples/cider/mos/charge.cir b/Windows/spice/examples/cider/mos/charge.cir new file mode 100644 index 00000000..845a14a8 --- /dev/null +++ b/Windows/spice/examples/cider/mos/charge.cir @@ -0,0 +1,57 @@ +MOS charge pump + +vin 4 0 dc 0v pulse 0 5 15ns 5ns 5ns 50ns 100ns +vdd 5 6 dc 0v pulse 0 5 25ns 5ns 5ns 50ns 100ns +vbb 0 7 dc 0v pulse 0 5 0ns 5ns 5ns 50ns 100ns +rd 6 2 10k +m1 5 4 3 7 mmod w=100um +vs 3 2 0 +vc 2 1 0 +c2 1 0 10pf + +.ic v(3)=1.0 +.tran 2ns 200ns +.options acct bypass=1 +.print tran v(1) v(2) + +.model mmod numos ++ x.mesh n=1 l=0 ++ x.mesh n=3 l=0.4 ++ x.mesh n=7 l=0.6 ++ x.mesh n=15 l=1.4 ++ x.mesh n=19 l=1.6 ++ x.mesh n=21 l=2.0 ++ ++ y.mesh n=1 l=0 ++ y.mesh n=4 l=0.015 ++ y.mesh n=8 l=0.05 ++ y.mesh n=12 l=0.25 ++ y.mesh n=14 l=0.35 ++ y.mesh n=17 l=0.5 ++ y.mesh n=21 l=1.0 ++ ++ region num=1 material=1 y.l=0.015 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ ++ region num=2 material=2 y.h=0.015 x.l=0.5 x.h=1.5 ++ material num=2 oxide ++ ++ elec num=1 ix.l=18 ix.h=21 iy.l=4 iy.h=4 ++ elec num=2 ix.l=5 ix.h=17 iy.l=1 iy.h=1 ++ elec num=3 ix.l=1 ix.h=4 iy.l=4 iy.h=4 ++ elec num=4 ix.l=1 ix.h=21 iy.l=21 iy.h=21 ++ ++ doping unif n.type conc=1e18 x.l=0.0 x.h=0.5 y.l=0.015 y.h=0.25 ++ doping unif n.type conc=1e18 x.l=1.5 x.h=2.0 y.l=0.015 y.h=0.25 ++ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 y.l=0.015 y.h=1.0 ++ doping unif p.type conc=1.3e17 x.l=0.5 x.h=1.5 y.l=0.015 y.h=0.05 ++ ++ models concmob fieldmob ++ method onec + +.end diff --git a/Windows/spice/examples/cider/mos/cmosinv.cir b/Windows/spice/examples/cider/mos/cmosinv.cir new file mode 100644 index 00000000..8f153cc7 --- /dev/null +++ b/Windows/spice/examples/cider/mos/cmosinv.cir @@ -0,0 +1,115 @@ +CMOS Inverter + +Vdd 1 0 5.0v +Vss 2 0 0.0v + +X1 1 2 3 4 INV + +Vin 3 0 2.5v + +.SUBCKT INV 1 2 3 4 +* Vdd Vss Vin Vout +M1 14 13 15 16 M_PMOS w=6.0u +M2 24 23 25 26 M_NMOS w=3.0u + +Vgp 3 13 0.0v +Vdp 4 14 0.0v +Vsp 1 15 0.0v +Vbp 1 16 0.0v + +Vgn 3 23 0.0v +Vdn 4 24 0.0v +Vsn 2 25 0.0v +Vbn 2 26 0.0v +.ENDS INV + +.model M_NMOS numos ++ x.mesh l=0.0 n=1 ++ x.mesh l=0.6 n=4 ++ x.mesh l=0.7 n=5 ++ x.mesh l=1.0 n=7 ++ x.mesh l=1.2 n=11 ++ x.mesh l=3.2 n=21 ++ x.mesh l=3.4 n=25 ++ x.mesh l=3.7 n=27 ++ x.mesh l=3.8 n=28 ++ x.mesh l=4.4 n=31 ++ ++ y.mesh l=-.05 n=1 ++ y.mesh l=0.0 n=5 ++ y.mesh l=.05 n=9 ++ y.mesh l=0.3 n=14 ++ y.mesh l=2.0 n=19 ++ ++ region num=1 material=1 y.l=0.0 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ ++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 ++ material num=2 oxide ++ ++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 ++ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 ++ ++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 ++ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 ++ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 ++ ++ models concmob fieldmob bgn srh conctau ++ method ac=direct onec + +.model M_PMOS numos ++ x.mesh l=0.0 n=1 ++ x.mesh l=0.6 n=4 ++ x.mesh l=0.7 n=5 ++ x.mesh l=1.0 n=7 ++ x.mesh l=1.2 n=11 ++ x.mesh l=3.2 n=21 ++ x.mesh l=3.4 n=25 ++ x.mesh l=3.7 n=27 ++ x.mesh l=3.8 n=28 ++ x.mesh l=4.4 n=31 ++ ++ y.mesh l=-.05 n=1 ++ y.mesh l=0.0 n=5 ++ y.mesh l=.05 n=9 ++ y.mesh l=0.3 n=14 ++ y.mesh l=2.0 n=19 ++ ++ region num=1 material=1 y.l=0.0 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ ++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 ++ material num=2 oxide ++ ++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 ++ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 ++ ++ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 ++ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 ++ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 ++ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 ++ ++ models concmob fieldmob bgn srh conctau ++ method ac=direct onec + +*.tran 0.1ns 5ns +*.op +.dc Vin 0.0v 5.001v 0.05v +.print v(4) +.options acct bypass=1 method=gear +.end diff --git a/Windows/spice/examples/cider/mos/nmosinv.cir b/Windows/spice/examples/cider/mos/nmosinv.cir new file mode 100644 index 00000000..ac49c754 --- /dev/null +++ b/Windows/spice/examples/cider/mos/nmosinv.cir @@ -0,0 +1,55 @@ +Resistive load NMOS inverter +vin 1 0 pwl 0 0.0 2ns 5 +vdd 3 0 dc 5.0 +rd 3 2 2.5k +m1 2 1 4 5 mmod w=10um +cl 2 0 2pf +vb 5 0 0 +vs 4 0 0 + +.model mmod numos ++ x.mesh l=0.0 n=1 ++ x.mesh l=0.6 n=4 ++ x.mesh l=0.7 n=5 ++ x.mesh l=1.0 n=7 ++ x.mesh l=1.2 n=11 ++ x.mesh l=3.2 n=21 ++ x.mesh l=3.4 n=25 ++ x.mesh l=3.7 n=27 ++ x.mesh l=3.8 n=28 ++ x.mesh l=4.4 n=31 ++ ++ y.mesh l=-.05 n=1 ++ y.mesh l=0.0 n=5 ++ y.mesh l=.05 n=9 ++ y.mesh l=0.3 n=14 ++ y.mesh l=2.0 n=19 ++ ++ region num=1 material=1 y.l=0.0 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ ++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 ++ material num=2 oxide ++ ++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 ++ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 ++ ++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 ++ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 ++ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 ++ ++ models concmob fieldmob ++ method ac=direct onec + +.tran 0.2ns 30ns +.options acct bypass=1 +.print tran v(1) v(2) +.end diff --git a/Windows/spice/examples/cider/mos/pass.cir b/Windows/spice/examples/cider/mos/pass.cir new file mode 100644 index 00000000..a58c8a5f --- /dev/null +++ b/Windows/spice/examples/cider/mos/pass.cir @@ -0,0 +1,59 @@ +Turnoff transient of pass transistor + +M1 11 2 3 4 mmod w=20um +Cs 1 0 6.0pF +Cl 3 0 6.0pF +R1 3 6 200k +Vin 6 0 dc 0 +Vdrn 1 11 dc 0 +Vg 2 0 dc 5 pwl 0 5 0.1n 0 1 0 +Vb 4 0 dc 0.0 + +.tran 0.05ns 0.2ns 0.0ns 0.05ns +.print tran v(1) i(Vdrn) +.ic v(1)=0 v(3)=0 +.option acct bypass=1 + +.model mmod numos ++ x.mesh l=0.0 n=1 ++ x.mesh l=0.6 n=4 ++ x.mesh l=0.7 n=5 ++ x.mesh l=1.0 n=7 ++ x.mesh l=1.2 n=11 ++ x.mesh l=3.2 n=21 ++ x.mesh l=3.4 n=25 ++ x.mesh l=3.7 n=27 ++ x.mesh l=3.8 n=28 ++ x.mesh l=4.4 n=31 ++ ++ y.mesh l=-.05 n=1 ++ y.mesh l=0.0 n=5 ++ y.mesh l=.05 n=9 ++ y.mesh l=0.3 n=14 ++ y.mesh l=2.0 n=19 ++ ++ region num=1 material=1 y.l=0.0 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ ++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 ++ material num=2 oxide ++ ++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 ++ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 ++ ++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 ++ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 ++ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 ++ ++ models concmob fieldmob ++ method ac=direct onec + +.end diff --git a/Windows/spice/examples/cider/mos/ringosc.cir b/Windows/spice/examples/cider/mos/ringosc.cir new file mode 100644 index 00000000..0f313320 --- /dev/null +++ b/Windows/spice/examples/cider/mos/ringosc.cir @@ -0,0 +1,122 @@ +CMOS Ring Oscillator + +Vdd 1 0 5.0v +Vss 2 0 0.0v + +X1 1 2 3 4 INV +X2 1 2 4 5 INV +X3 1 2 5 3 INV +*X4 1 2 6 7 INV +*X5 1 2 7 8 INV +*X6 1 2 8 9 INV +*X7 1 2 9 3 INV + +.IC V(3)=0.0v V(4)=2.5v V(5)=5.0v +* V(6)=0.0v V(7)=5.0v V(8)=0.0v V(9)=5.0v + +Vin 3 0 2.5v + +.SUBCKT INV 1 2 3 4 +* Vdd Vss Vin Vout +M1 14 13 15 16 M_PMOS w=6.0u +M2 24 23 25 26 M_NMOS w=3.0u + +Vgp 3 13 0.0v +Vdp 4 14 0.0v +Vsp 1 15 0.0v +Vbp 1 16 0.0v + +Vgn 3 23 0.0v +Vdn 4 24 0.0v +Vsn 2 25 0.0v +Vbn 2 26 0.0v +.ENDS INV + +.model M_NMOS numos ++ x.mesh l=0.0 n=1 ++ x.mesh l=0.6 n=4 ++ x.mesh l=0.7 n=5 ++ x.mesh l=1.0 n=7 ++ x.mesh l=1.2 n=11 ++ x.mesh l=3.2 n=21 ++ x.mesh l=3.4 n=25 ++ x.mesh l=3.7 n=27 ++ x.mesh l=3.8 n=28 ++ x.mesh l=4.4 n=31 ++ ++ y.mesh l=-.05 n=1 ++ y.mesh l=0.0 n=5 ++ y.mesh l=.05 n=9 ++ y.mesh l=0.3 n=14 ++ y.mesh l=2.0 n=19 ++ ++ region num=1 material=1 y.l=0.0 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ ++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 ++ material num=2 oxide ++ ++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 ++ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 ++ ++ doping unif p.type conc=2.5e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 ++ doping unif n.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 ++ doping unif n.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 ++ ++ models concmob fieldmob bgn srh conctau ++ method ac=direct onec + +.model M_PMOS numos ++ x.mesh l=0.0 n=1 ++ x.mesh l=0.6 n=4 ++ x.mesh l=0.7 n=5 ++ x.mesh l=1.0 n=7 ++ x.mesh l=1.2 n=11 ++ x.mesh l=3.2 n=21 ++ x.mesh l=3.4 n=25 ++ x.mesh l=3.7 n=27 ++ x.mesh l=3.8 n=28 ++ x.mesh l=4.4 n=31 ++ ++ y.mesh l=-.05 n=1 ++ y.mesh l=0.0 n=5 ++ y.mesh l=.05 n=9 ++ y.mesh l=0.3 n=14 ++ y.mesh l=2.0 n=19 ++ ++ region num=1 material=1 y.l=0.0 ++ material num=1 silicon ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ ++ region num=2 material=2 y.h=0.0 x.l=0.7 x.h=3.7 ++ material num=2 oxide ++ ++ elec num=1 x.l=3.8 x.h=4.4 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=0.7 x.h=3.7 iy.l=1 iy.h=1 ++ elec num=3 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=0.0 x.h=4.4 y.l=2.0 y.h=2.0 ++ ++ doping unif n.type conc=1e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=2.0 ++ doping unif p.type conc=3e16 x.l=0.0 x.h=4.4 y.l=0.0 y.h=0.05 ++ doping unif p.type conc=1e20 x.l=0.0 x.h=1.1 y.l=0.0 y.h=0.2 ++ doping unif p.type conc=1e20 x.l=3.3 x.h=4.4 y.l=0.0 y.h=0.2 ++ ++ models concmob fieldmob bgn srh conctau ++ method ac=direct onec + +.tran 0.1ns 5ns +.print v(4) +.options acct bypass=1 method=gear +.end diff --git a/Windows/spice/examples/cider/parallel/BICMOS.LIB b/Windows/spice/examples/cider/parallel/BICMOS.LIB new file mode 100644 index 00000000..606570ca --- /dev/null +++ b/Windows/spice/examples/cider/parallel/BICMOS.LIB @@ -0,0 +1,931 @@ +** +* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process +* Contains CIDER input descriptions as well as matching +* SPICE models for some of the CIDER models. +** + +** +* One-dimensional models for a +* polysilicon emitter complementary bipolar process. +* The default device size is 1um by 1um (LxW) +** + +.model M_NPN1D nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ++ method devtol=1e-12 ac=direct itlim=15 + +.model M_PNP1D nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ++ method devtol=1e-12 ac=direct itlim=15 + +** +* Two-dimensional models for a +* polysilicon emitter complementary bipolar process. +* The default device size is 1um by 1um (LxW) +** + +.MODEL M_NPNS nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter. Use a small mesh for this model. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 ++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.004 h.m=0.05 r=2.5 ++ y.mesh w=0.15 h.s=0.004 h.m=0.02 r=2.5 ++ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_NPN nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter length. Uses a finer mesh in the X direction. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.003 h.m=0.01 r=1.5 ++ y.mesh w=0.15 h.s=0.003 h.m=0.02 r=1.5 ++ y.mesh w=0.35 h.s=0.02 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_PNPS nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter length. Use a small mesh for this model. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0 ++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.12 h.e=0.004 h.m=0.05 r=2.5 ++ y.mesh w=0.28 h.s=0.004 h.m=0.02 r=2.5 ++ y.mesh w=1.05 h.s=0.02 h.m=0.1 r=2.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.200 lat.rotate ++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_PNP nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since half the device is simulated, double the unit width to get ++ * 1.0 um emitter length. Uses a finer mesh in the X direction. ++ options defw=2.0u ++ output stat ++ ++ x.mesh w=0.5 h.e=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0 ++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.12 h.e=0.003 h.m=0.01 r=1.5 ++ y.mesh w=0.28 h.s=0.003 h.m=0.02 r=1.5 ++ y.mesh w=0.20 h.s=0.02 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.200 lat.rotate ++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0 ++ + char.l=0.100 lat.rotate ratio=0.7 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +** +* Two-dimensional models for a +* complementary MOS process. +* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided. +** + +.MODEL M_NMOS_1 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_2 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_3 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 ++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_4 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 ++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_5 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 ++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_10 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 ++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_NMOS_50 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 ++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_1 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=2 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=2 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_2 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=3.5 x.h=4.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=3 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=4.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=3 x.h=4.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_3 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0 ++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=4.5 x.h=5.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=4 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=5.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=4 x.h=5.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_4 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0 ++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=5.5 x.h=6.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=5 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=6.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=5 x.h=6.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_5 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0 ++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=6.5 x.h=7.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=6 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=7.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=6 x.h=7.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_10 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0 ++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=11.5 x.h=12.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=11 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=12.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=11 x.h=12.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_50 numos ++ output stat ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0 ++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=51.5 x.h=52.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1 x.h=51 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=52.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=51 x.h=52.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob surfmob transmob fieldmob srh auger conctau bgn ++ method ac=direct itlim=10 onec + +** +* BSIM1 NMOS and PMOS 1.0 \um models. +* Gummel-Poon bipolar models. +** +.model M_NSIM_1 nmos level=4 ++vfb= -1.1908 ++phi= .8399 ++k1= 1.5329 ++k2= 193.7322m ++eta= 2m ++muz= 746.0 ++u0= 90.0m ++x2mz= 10.1429 ++x2e= -2.5m ++x3e= 0.2m ++x2u0= -10.0m ++mus= 975.0 ++u1= .20 ++x2ms= 0.0 ++x2u1= 0.0 ++x3ms= 10 ++x3u1= 5.0m ++tox=2.00000e-02 ++cgdo=2.0e-10 ++cgso=2.0e-10 ++cgbo=0.0 ++temp= 27 ++vdd= 7.0 ++xpart ++n0= 1.5686 ++nb= 94.6392m ++nd=0.00000e+00 ++rsh=30.0 cj=7.000e-004 cjsw=4.20e-010 ++js=1.00e-008 pb=0.700e000 ++pbsw=0.8000e000 mj=0.5 mjsw=0.33 ++wdf=0 dell=0.20u + +.model M_PSIM_1 pmos level=4 ++vfb= -1.3674 ++phi= .8414 ++k1= 1.5686 ++k2= 203m ++eta= 2m ++muz= 340.0 ++u0= 35.0m ++x2mz= 6.0 ++x2e= 0.0 ++x3e= -0.2m ++x2u0= -15.0m ++mus= 440.0 ++u1= .38 ++x2ms= 0.0 ++x2u1= 0.0 ++x3ms= -20 ++x3u1= -10.0m ++tox=2.00000e-02 ++cgdo=2.0e-10 ++cgso=2.0e-10 ++cgbo=0.0 ++temp= 27 ++vdd= 5.0 ++xpart ++n0= 1.5686 ++nb= 94.6392m ++nd=0.00000e+00 ++rsh=80.0 cj=7.000e-004 cjsw=4.20e-010 ++js=1.00e-008 pb=0.700e000 ++pbsw=0.8000e000 mj=0.5 mjsw=0.33 ++wdf=0 dell=0.17u + +.model M_GNPN npn ++ is=1.3e-16 ++ nf=1.00 bf=262.5 ikf=25mA vaf=20v ++ nr=1.00 br=97.5 ikr=0.5mA var=1.8v ++ rc=20.0 ++ re=0.09 ++ rb=15.0 ++ ise=4.0e-16 ne=2.1 ++ isc=7.2e-17 nc=2.0 ++ tf=9.4ps itf=26uA xtf=0.5 ++ tr=10ns ++ cje=89.44fF vje=0.95 mje=0.5 ++ cjc=12.82fF vjc=0.73 mjc=0.49 + +.model M_GPNP pnp ++ is=5.8e-17 ++ nf=1.001 bf=96.4 ikf=12mA vaf=29v ++ nr=1.0 br=17.3 ikr=0.2mA var=2.0v ++ rc=50.0 ++ re=0.17 ++ rb=20.0 ++ ise=6.8e-17 ne=2.0 ++ isc=9.0e-17 nc=2.1 ++ tf=27.4ps itf=26uA xtf=0.5 ++ tr=10ns ++ cje=55.36fF vje=0.95 mje=0.58 ++ cjc=11.80fF vjc=0.72 mjc=0.46 diff --git a/Windows/spice/examples/cider/parallel/bicmpd.cir b/Windows/spice/examples/cider/parallel/bicmpd.cir new file mode 100644 index 00000000..be26e40d --- /dev/null +++ b/Windows/spice/examples/cider/parallel/bicmpd.cir @@ -0,0 +1,26 @@ +BICMOS INVERTER PULLDOWN CIRCUIT + +VSS 2 0 0V + +VIN 3 2 0V (PULSE 0.0V 4.2V 0NS 1NS 1NS 9NS 20NS) + +M1 8 3 5 11 M_NMOS_1 W=4U L=1U +VD 4 8 0V +VBK 11 2 0V + +Q1 10 7 9 M_NPNS AREA=8 +VC 4 10 0V +VB 5 7 0V +VE 9 2 0V + +CL 4 6 1PF +VL 6 2 0V + +.IC V(10)=5.0V V(7)=0.0V +.TRAN 0.1NS 5NS 0NS 0.1NS +.PLOT TRAN I(VIN) + +.INCLUDE BICMOS.LIB + +.OPTIONS ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/parallel/bicmpu.cir b/Windows/spice/examples/cider/parallel/bicmpu.cir new file mode 100644 index 00000000..7067ce14 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/bicmpu.cir @@ -0,0 +1,24 @@ +BICMOS INVERTER PULLUP CIRCUIT + +VDD 1 0 5.0V +VSS 2 0 0.0V + +VIN 3 0 0.75V + +VC 1 11 0.0V +VB 5 15 0.0V + +Q1 11 15 4 M_NPNS AREA=8 +M1 5 3 1 1 M_PMOS_1 W=10U L=1U + +CL 4 0 5.0PF + +.IC V(4)=0.75V V(5)=0.0V + +.INCLUDE BICMOS.LIB + +.TRAN 0.5NS 4.0NS +.PRINT TRAN V(3) V(4) + +.OPTION ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/parallel/clkfeed.cir b/Windows/spice/examples/cider/parallel/clkfeed.cir new file mode 100644 index 00000000..d0a06f15 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/clkfeed.cir @@ -0,0 +1,34 @@ +SWITCHED CURRENT CELL - CLOCK FEEDTHROUGH + +VDD 1 0 5.0V +VSS 2 0 0.0V + +IIN 13 0 0.0 +VIN 13 3 0.0 +VL 4 0 2.5V +VCK 6 0 5.0V PULSE 5.0V 0.0V 5.0NS 5NS 5NS 20NS 50NS + +M1 3 3 2 2 M_NMOS_5 W=5U L=5U +M2 4 5 2 2 M_NMOS_5 W=10U L=5U +M3 23 26 25 22 M_NMOS_5 W=5U L=5U +RLK1 3 0 100G +RLK2 5 0 100G +VD 3 23 0.0V +VG 6 26 0.0V +VS 5 25 0.0V +VB 2 22 0.0V + +M4 7 7 1 1 M_PMOS_IDEAL W=100U L=1U +M5 3 7 1 1 M_PMOS_IDEAL W=100U L=1U +M6 4 7 1 1 M_PMOS_IDEAL W=200U L=1U +IREF 7 0 50UA + +****** MODELS ****** +.MODEL M_PMOS_IDEAL PMOS VTO=-1.0V KP=100U + +.INCLUDE BICMOS.LIB + +.TRAN 0.1NS 50NS + +.OPTIONS ACCT BYPASS=1 METHOD=GEAR +.END diff --git a/Windows/spice/examples/cider/parallel/cmosamp.cir b/Windows/spice/examples/cider/parallel/cmosamp.cir new file mode 100644 index 00000000..f88115b5 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/cmosamp.cir @@ -0,0 +1,29 @@ +CMOS 2-STAGE OPERATIONAL AMPLIFIER + +VDD 1 0 2.5V +VSS 2 0 -2.5V + +IBIAS 9 0 100UA + +VPL 3 0 0.0V AC 0.5V +VMI 4 0 0.0V AC 0.5V 180 + +M1 6 3 5 5 M_PMOS_1 W=15U L=1U +M2 7 4 5 5 M_PMOS_1 W=15U L=1U +M3 6 6 2 2 M_NMOS_1 W=7.5U L=1U +M4 7 6 2 2 M_NMOS_1 W=7.5U L=1U +M5 8 7 2 2 M_NMOS_1 W=15U L=1U +M6 9 9 1 1 M_PMOS_1 W=15U L=1U +M7 5 9 1 1 M_PMOS_1 W=15U L=1U +M8 8 9 1 1 M_PMOS_1 W=15U L=1U + +*CC 7 8 0.1PF + +.INCLUDE BICMOS.LIB + +*.OP +*.AC DEC 10 1K 100G +.DC VPL -5MV 5MV 0.1MV + +.OPTIONS ACCT BYPASS=1 METHOD=GEAR +.END diff --git a/Windows/spice/examples/cider/parallel/eclinv.cir b/Windows/spice/examples/cider/parallel/eclinv.cir new file mode 100644 index 00000000..a63c1c14 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/eclinv.cir @@ -0,0 +1,30 @@ +ECL INVERTER +*** (FROM MEINERZHAGEN ET AL.) + +VCC 1 0 0.0V +VEE 2 0 -5.2V + +VIN 3 0 -1.25V +VRF 4 0 -1.25V + +*** INPUT STAGE +Q1 5 3 9 M_NPNS AREA=8 +Q2 6 4 9 M_NPNS AREA=8 +R1 1 5 662 +R2 1 6 662 +R3 9 2 2.65K + +*** OUTPUT BUFFERS +Q3 1 5 7 M_NPNS AREA=8 +Q4 1 6 8 M_NPNS AREA=8 +R4 7 2 4.06K +R5 8 2 4.06K + +*** MODEL LIBRARY +.INCLUDE BICMOS.LIB + +.DC VIN -2.00 0.001 0.05 +.PLOT DC V(7) V(8) + +.OPTIONS ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/parallel/ecpal.cir b/Windows/spice/examples/cider/parallel/ecpal.cir new file mode 100644 index 00000000..4485a442 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/ecpal.cir @@ -0,0 +1,19 @@ +EMITTER COUPLED PAIR WITH ACTIVE LOAD + +VCC 1 0 5V +VEE 2 0 0V +VINP 4 0 2.99925V AC 0.5V +VINM 7 0 3V AC 0.5V 180 +IEE 5 2 0.1MA +Q1 3 4 5 M_NPNS AREA=8 +Q2 6 7 5 M_NPNS AREA=8 +Q3 3 3 1 M_PNPS AREA=8 +Q4 6 3 1 M_PNPS AREA=8 + +.AC DEC 10 10K 100G +.PLOT AC VDB(6) + +.INCLUDE BICMOS.LIB + +.OPTIONS ACCT RELTOL=1E-6 +.END diff --git a/Windows/spice/examples/cider/parallel/foobar b/Windows/spice/examples/cider/parallel/foobar new file mode 100644 index 00000000..1e5e7b73 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/foobar @@ -0,0 +1,10 @@ +\section*{BICMPD Benchmark} +\section*{BICMPU Benchmark} +\section*{CLKFEED Benchmark} +\section*{CMOSAMP Benchmark} +\section*{ECLINV Benchmark} +\section*{ECPAL Benchmark} +\section*{GMAMP Benchmark} +\section*{LATCH Benchmark} +\section*{PPEF Benchmarks} +\section*{RINGOSC Benchmarks} diff --git a/Windows/spice/examples/cider/parallel/gmamp.cir b/Windows/spice/examples/cider/parallel/gmamp.cir new file mode 100644 index 00000000..e570beca --- /dev/null +++ b/Windows/spice/examples/cider/parallel/gmamp.cir @@ -0,0 +1,34 @@ +BICMOS 3-STAGE AMPLIFIER +*** IN GRAY & MEYER, 3RD ED. P.266, PROB. 3.12, 8.19 + +VDD 1 0 5.0V +VSS 2 0 0.0V + +*** VOLTAGE INPUT +*VIN 13 0 0.0V AC 1V +*CIN 13 3 1UF + +*** CURRENT INPUT +IIN 3 0 0.0 AC 1.0 + +M1 4 3 2 2 M_NMOS_1 W=300U L=1U +M2 7 7 2 2 M_NMOS_1 W=20U L=1U + +Q1 6 5 4 M_NPNS AREA=40 +Q2 5 5 7 M_NPNS AREA=40 +Q3 1 6 8 M_NPNS AREA=40 + +RL1 1 4 1K +RL2 1 6 10K +RB1 1 5 10K +RL3 8 2 1K +RF1 3 8 30K + +*** NUMERICAL MODEL LIBRARY *** +.INCLUDE BICMOS.LIB + +.AC DEC 10 100KHZ 100GHZ +.PLOT AC VDB(8) + +.OPTIONS ACCT BYPASS=1 KEEPOPINFO +.END diff --git a/Windows/spice/examples/cider/parallel/latch.cir b/Windows/spice/examples/cider/parallel/latch.cir new file mode 100644 index 00000000..3ad63335 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/latch.cir @@ -0,0 +1,46 @@ +STATIC LATCH +*** IC=1MA, RE6=3K +*** SPICE ORIGINAL 1-7-80, CIDER REVISED 4-16-93 + +*** BIAS CIRCUIT +*** RESISTORS +RCC2 6 8 3.33K +REE2 9 0 200 +*** TRANSISTORS +Q1 6 8 4 M_NPN1D AREA=8 +Q2 8 4 9 M_NPN1D AREA=8 + +*** MODELS +.INCLUDE BICMOS.LIB + +*** SOURCES +VCC 6 0 5V +VREF 3 0 2.5V +VRSET 1 0 PULSE(2V 3V 0.1NS 0.1NS 0.1NS 0.9NS 4NS) +VSET 7 0 PULSE(2V 3V 2.1NS 0.1NS 0.1NS 0.9NS 4NS) + +*** LATCH +X1 1 2 3 4 5 6 ECLNOR2 +X2 5 7 3 4 2 6 ECLNOR2 + +*** SUBCIRCUITS +.SUBCKT ECLNOR2 1 2 3 4 5 6 +** RESISTORS +RS 6 11 520 +RC2 11 10 900 +RE4 12 0 200 +RE6 5 0 6K +** TRANSISTORS +Q1 9 1 8 M_NPN1D AREA=8 +Q2 9 2 8 M_NPN1D AREA=8 +Q3 11 3 8 M_NPN1D AREA=8 +Q4 8 4 12 M_NPN1D AREA=8 +Q5 10 10 9 M_NPN1D AREA=8 +Q6 6 9 5 M_NPN1D AREA=8 +.ENDS ECLNOR2 + +*** CONTROL CARDS +.TRAN 0.01NS 8NS +.PRINT TRAN V(1) V(7) V(5) V(2) +.OPTIONS ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/parallel/ppef.1d.cir b/Windows/spice/examples/cider/parallel/ppef.1d.cir new file mode 100644 index 00000000..8690c665 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/ppef.1d.cir @@ -0,0 +1,25 @@ +PUSH-PULL EMITTER FOLLOWER - ONE-DIMENSIONAL MODELS + +VCC 1 0 5.0V +VEE 2 0 -5.0V + +VIN 3 0 0.0V (SIN 0.0V 0.1V 1KHZ) AC 1 +VBU 13 3 0.7V +VBL 3 23 0.7V + +RL 4 44 50 +VLD 44 0 0V + +Q1 5 13 4 M_NPN1D AREA=40 +Q2 4 5 1 M_PNP1D AREA=200 + +Q3 6 23 4 M_PNP1D AREA=100 +Q4 4 6 2 M_NPN1D AREA=80 + +.INCLUDE BICMOS.LIB + +.TRAN 0.01MS 1.00001MS 0US 0.01MS +.PLOT TRAN V(4) + +.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5 +.END diff --git a/Windows/spice/examples/cider/parallel/ppef.2d.cir b/Windows/spice/examples/cider/parallel/ppef.2d.cir new file mode 100644 index 00000000..07fa10fb --- /dev/null +++ b/Windows/spice/examples/cider/parallel/ppef.2d.cir @@ -0,0 +1,25 @@ +PUSH-PULL EMITTER FOLLOWER - TWO-DIMENSIONAL MODELS + +VCC 1 0 5.0V +VEE 2 0 -5.0V + +VIN 3 0 0.0V (SIN 0.0V 0.1V 1KHZ) AC 1 +VBU 13 3 0.7V +VBL 3 23 0.7V + +RL 4 44 50 +VLD 44 0 0V + +Q1 5 13 4 M_NPNS AREA=40 +Q2 4 5 1 M_PNPS AREA=200 + +Q3 6 23 4 M_PNPS AREA=100 +Q4 4 6 2 M_NPNS AREA=80 + +.INCLUDE BICMOS.LIB + +.TRAN 0.01MS 1.00001MS 0US 0.01MS +.PLOT TRAN V(4) + +.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5 +.END diff --git a/Windows/spice/examples/cider/parallel/readme b/Windows/spice/examples/cider/parallel/readme new file mode 100644 index 00000000..077c78f6 --- /dev/null +++ b/Windows/spice/examples/cider/parallel/readme @@ -0,0 +1,3 @@ +This directory contains the additional CIDER parallel-version benchmarks +used in the thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" +by David A. Gates. diff --git a/Windows/spice/examples/cider/parallel/ringosc.1u.cir b/Windows/spice/examples/cider/parallel/ringosc.1u.cir new file mode 100644 index 00000000..2304c4eb --- /dev/null +++ b/Windows/spice/examples/cider/parallel/ringosc.1u.cir @@ -0,0 +1,39 @@ +CMOS RING OSCILLATOR - 1UM DEVICES + +VDD 1 0 5.0V +VSS 2 0 0.0V + +X1 1 2 3 4 INV +X2 1 2 4 5 INV +X3 1 2 5 6 INV +X4 1 2 6 7 INV +X5 1 2 7 8 INV +X6 1 2 8 9 INV +X7 1 2 9 3 INV + +.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V ++ V(6)=0.0V V(7)=5.0V V(8)=0.0V V(9)=5.0V + +.SUBCKT INV 1 2 3 4 +* VDD VSS VIN VOUT +M1 14 13 15 16 M_PMOS_1 W=6.0U +M2 24 23 25 26 M_NMOS_1 W=3.0U + +VGP 3 13 0.0V +VDP 4 14 0.0V +VSP 1 15 0.0V +VBP 1 16 0.0V + +VGN 3 23 0.0V +VDN 4 24 0.0V +VSN 2 25 0.0V +VBN 2 26 0.0V +.ENDS INV + +.INCLUDE BICMOS.LIB + +.TRAN 0.1NS 1NS +.PRINT TRAN V(3) V(4) V(5) + +.OPTIONS ACCT BYPASS=1 METHOD=GEAR +.END diff --git a/Windows/spice/examples/cider/parallel/ringosc.2u.cir b/Windows/spice/examples/cider/parallel/ringosc.2u.cir new file mode 100644 index 00000000..c79885ab --- /dev/null +++ b/Windows/spice/examples/cider/parallel/ringosc.2u.cir @@ -0,0 +1,114 @@ +CMOS RING OSCILLATOR - 2UM DEVICES + +VDD 1 0 5.0V +VSS 2 0 0.0V + +X1 1 2 3 4 INV +X2 1 2 4 5 INV +X3 1 2 5 6 INV +X4 1 2 6 7 INV +X5 1 2 7 8 INV +X6 1 2 8 9 INV +X7 1 2 9 3 INV + +.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V V(6)=0.0V ++ V(7)=5.0V V(8)=0.0V V(9)=5.0V + +.SUBCKT INV 1 2 3 4 +* VDD VSS VIN VOUT +M1 14 13 15 16 M_PMOS W=6.0U +M2 24 23 25 26 M_NMOS W=3.0U + +VGP 3 13 0.0V +VDP 4 14 0.0V +VSP 1 15 0.0V +VBP 1 16 0.0V + +VGN 3 23 0.0V +VDN 4 24 0.0V +VSN 2 25 0.0V +VBN 2 26 0.0V +.ENDS INV + +.MODEL M_NMOS NUMOS ++ X.MESH L=0.0 N=1 ++ X.MESH L=0.6 N=4 ++ X.MESH L=0.7 N=5 ++ X.MESH L=1.0 N=7 ++ X.MESH L=1.2 N=11 ++ X.MESH L=3.2 N=21 ++ X.MESH L=3.4 N=25 ++ X.MESH L=3.7 N=27 ++ X.MESH L=3.8 N=28 ++ X.MESH L=4.4 N=31 ++ ++ Y.MESH L=-.05 N=1 ++ Y.MESH L=0.0 N=5 ++ Y.MESH L=.05 N=9 ++ Y.MESH L=0.3 N=14 ++ Y.MESH L=2.0 N=19 ++ ++ REGION NUM=1 MATERIAL=1 Y.L=0.0 ++ MATERIAL NUM=1 SILICON ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ ++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 ++ MATERIAL NUM=2 OXIDE ++ ++ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 ++ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 ++ ++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 ++ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 ++ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 ++ ++ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU ++ METHOD AC=DIRECT ONEC ++ OUTPUT ^ALL.DEBUG + +.MODEL M_PMOS NUMOS ++ X.MESH L=0.0 N=1 ++ X.MESH L=0.6 N=4 ++ X.MESH L=0.7 N=5 ++ X.MESH L=1.0 N=7 ++ X.MESH L=1.2 N=11 ++ X.MESH L=3.2 N=21 ++ X.MESH L=3.4 N=25 ++ X.MESH L=3.7 N=27 ++ X.MESH L=3.8 N=28 ++ X.MESH L=4.4 N=31 ++ ++ Y.MESH L=-.05 N=1 ++ Y.MESH L=0.0 N=5 ++ Y.MESH L=.05 N=9 ++ Y.MESH L=0.3 N=14 ++ Y.MESH L=2.0 N=19 ++ ++ REGION NUM=1 MATERIAL=1 Y.L=0.0 ++ MATERIAL NUM=1 SILICON ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ ++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 ++ MATERIAL NUM=2 OXIDE ++ ++ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 ++ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 ++ ++ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 ++ DOPING UNIF P.TYPE CONC=3E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 ++ DOPING UNIF P.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 ++ DOPING UNIF P.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 ++ ++ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU ++ METHOD AC=DIRECT ONEC ++ OUTPUT ^ALL.DEBUG + +.TRAN 0.1NS 5.0NS +.PRINT V(4) +.OPTIONS ACCT BYPASS=1 METHOD=GEAR +.END diff --git a/Windows/spice/examples/cider/resistor/gaasres.cir b/Windows/spice/examples/cider/resistor/gaasres.cir new file mode 100644 index 00000000..c35d0ddc --- /dev/null +++ b/Windows/spice/examples/cider/resistor/gaasres.cir @@ -0,0 +1,30 @@ +Gallium Arsenide Resistor + +* This transient simulation demonstrates the effects of velocity overshoot +* and velocity saturation at high lateral electric fields. +* Do not try to do DC analysis of this resistor. It will not converge +* because of the peculiar characteristics of the GaAs velocity-field +* relation. In some cases, problems can arise in transient simulation +* as well. + +VPP 1 0 1v PWL 0s 0.0v 10s 1v +VNN 2 0 0.0v +D1 1 2 M_RES AREA=1 + +.MODEL M_RES numd level=1 ++ options resistor defa=1p ++ x.mesh loc=0.0 num=1 ++ x.mesh loc=1.0 num=101 ++ domain num=1 material=1 ++ material num=1 gaas ++ doping unif n.type conc=2.5e16 ++ models fieldmob srh auger conctau ++ method ac=direct + +*.OP +*.DC VPP 0.0v 10.01v 0.1v +.TRAN 1s 10.001s 0s 0.1s +.PRINT I(VPP) + +.OPTION ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/resistor/sires.cir b/Windows/spice/examples/cider/resistor/sires.cir new file mode 100644 index 00000000..45e2aa12 --- /dev/null +++ b/Windows/spice/examples/cider/resistor/sires.cir @@ -0,0 +1,26 @@ +Silicon Resistor + +* This simulation demonstrates the effects of velocity saturation at +* high lateral electric fields. + +VPP 1 0 10v PWL 0s 0.0v 100s 10v +VNN 2 0 0.0v +D1 1 2 M_RES AREA=1 + +.MODEL M_RES numd level=1 ++ options resistor defa=1p ++ x.mesh loc=0.0 num=1 ++ x.mesh loc=1.0 num=101 ++ domain num=1 material=1 ++ material num=1 silicon ++ doping unif n.type conc=2.5e16 ++ models bgn srh conctau auger concmob fieldmob ++ method ac=direct + +*.OP +.DC VPP 0.0v 10.01v 0.1v +*.TRAN 1s 100.001s 0s 0.2s +.PRINT I(VPP) + +.OPTION ACCT BYPASS=1 RELTOL=1e-12 +.END diff --git a/Windows/spice/examples/cider/serial/astable.cir b/Windows/spice/examples/cider/serial/astable.cir new file mode 100644 index 00000000..c04c6bba --- /dev/null +++ b/Windows/spice/examples/cider/serial/astable.cir @@ -0,0 +1,30 @@ +ASTABLE MULTIVIBRATOR + +VIN 5 0 DC 0 PULSE(0 5 0 1US 1US 100US 100US) +VCC 6 0 5.0 +RC1 6 1 1K +RC2 6 2 1K +RB1 6 3 30K +RB2 5 4 30K +C1 1 4 150PF +C2 2 3 150PF +Q1 1 3 0 QMOD AREA = 100P +Q2 2 4 0 QMOD AREA = 100P + +.OPTION ACCT BYPASS=1 +.TRAN 0.05US 8US 0US 0.05US +.PRINT TRAN V(1) V(2) V(3) V(4) + +.MODEL QMOD NBJT LEVEL=1 ++ X.MESH NODE=1 LOC=0.0 ++ X.MESH NODE=61 LOC=3.0 ++ REGION NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 ++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 ++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB ++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 + +.END diff --git a/Windows/spice/examples/cider/serial/charge.cir b/Windows/spice/examples/cider/serial/charge.cir new file mode 100644 index 00000000..c4c689b6 --- /dev/null +++ b/Windows/spice/examples/cider/serial/charge.cir @@ -0,0 +1,53 @@ +MOS CHARGE PUMP + +VIN 4 0 DC 0V PULSE 0 5 15NS 5NS 5NS 50NS 100NS +VDD 5 6 DC 0V PULSE 0 5 25NS 5NS 5NS 50NS 100NS +VBB 0 7 DC 0V PULSE 0 5 0NS 5NS 5NS 50NS 100NS +RD 6 2 10K +M1 5 4 3 7 MMOD W=100UM +VS 3 2 0 +VC 2 1 0 +C2 1 0 10PF + +.IC V(3)=1.0 +.TRAN 2NS 200NS +.OPTIONS ACCT BYPASS=1 +.PRINT TRAN V(1) V(2) + +.MODEL MMOD NUMOS ++ X.MESH N=1 L=0 ++ X.MESH N=3 L=0.4 ++ X.MESH N=7 L=0.6 ++ X.MESH N=15 L=1.4 ++ X.MESH N=19 L=1.6 ++ X.MESH N=21 L=2.0 ++ ++ Y.MESH N=1 L=0 ++ Y.MESH N=4 L=0.015 ++ Y.MESH N=8 L=0.05 ++ Y.MESH N=12 L=0.25 ++ Y.MESH N=14 L=0.35 ++ Y.MESH N=17 L=0.5 ++ Y.MESH N=21 L=1.0 ++ ++ REGION NUM=1 MATERIAL=1 Y.L=0.015 ++ MATERIAL NUM=1 SILICON ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ ++ REGION NUM=2 MATERIAL=2 Y.H=0.015 X.L=0.5 X.H=1.5 ++ MATERIAL NUM=2 OXIDE ++ ++ ELEC NUM=1 IX.L=18 IX.H=21 IY.L=4 IY.H=4 ++ ELEC NUM=2 IX.L=5 IX.H=17 IY.L=1 IY.H=1 ++ ELEC NUM=3 IX.L=1 IX.H=4 IY.L=4 IY.H=4 ++ ELEC NUM=4 IX.L=1 IX.H=21 IY.L=21 IY.H=21 ++ ++ DOPING UNIF N.TYPE CONC=1E18 X.L=0.0 X.H=0.5 Y.L=0.015 Y.H=0.25 ++ DOPING UNIF N.TYPE CONC=1E18 X.L=1.5 X.H=2.0 Y.L=0.015 Y.H=0.25 ++ DOPING UNIF P.TYPE CONC=1E15 X.L=0.0 X.H=2.0 Y.L=0.015 Y.H=1.0 ++ DOPING UNIF P.TYPE CONC=1.3E17 X.L=0.5 X.H=1.5 Y.L=0.015 Y.H=0.05 ++ ++ MODELS CONCMOB FIELDMOB ++ METHOD ONEC + +.END diff --git a/Windows/spice/examples/cider/serial/colposc.cir b/Windows/spice/examples/cider/serial/colposc.cir new file mode 100644 index 00000000..b7d14ce9 --- /dev/null +++ b/Windows/spice/examples/cider/serial/colposc.cir @@ -0,0 +1,29 @@ +COLPITT'S OSCILLATOR CIRCUIT + +R1 1 0 1 +Q1 2 1 3 QMOD AREA = 100P +VCC 4 0 5 +RL 4 2 750 +C1 2 3 500P +C2 4 3 4500P +L1 4 2 5UH +RE 3 6 4.65K +VEE 6 0 DC -15 PWL 0 -15 1E-9 -10 + +.TRAN 30N 12U +.PRINT TRAN V(2) + +.MODEL QMOD NBJT LEVEL=1 ++ X.MESH NODE=1 LOC=0.0 ++ X.MESH NODE=61 LOC=3.0 ++ REGION NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 ++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 ++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB ++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 + +.OPTIONS ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/serial/dbridge.cir b/Windows/spice/examples/cider/serial/dbridge.cir new file mode 100644 index 00000000..052ae4f0 --- /dev/null +++ b/Windows/spice/examples/cider/serial/dbridge.cir @@ -0,0 +1,30 @@ +DIODE BRIDGE RECTIFIER + +VLINE 3 4 0.0V SIN 0V 10V 60HZ +VGRND 2 0 0.0V +D1 3 1 M_PN AREA=100 +D2 4 1 M_PN AREA=100 +D3 2 3 M_PN AREA=100 +D4 2 4 M_PN AREA=100 +RL 1 2 1.0K + +.MODEL M_PN NUMD LEVEL=1 ++ *************************************** ++ *** ONE-DIMENSIONAL NUMERICAL DIODE *** ++ *************************************** ++ OPTIONS DEFA=1P ++ X.MESH LOC=0.0 N=1 ++ X.MESH LOC=30.0 N=201 ++ DOMAIN NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON ++ MOBILITY MAT=1 CONCMOD=CT FIELDMOD=CT ++ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.0 CHAR.L=1.0 ++ DOPING UNIF N.TYPE CONC=1E14 X.L=0.0 X.H=30.0 ++ DOPING GAUSS N.TYPE CONC=5E19 X.L=30.0 X.H=30.0 CHAR.L=2.0 ++ MODELS BGN ^AVAL SRH AUGER CONCTAU CONCMOB FIELDMOB ++ METHOD AC=DIRECT + +.OPTION ACCT BYPASS=1 METHOD=GEAR +.TRAN 0.5MS 50MS +.PRINT I(VLINE) +.END diff --git a/Windows/spice/examples/cider/serial/invchain.cir b/Windows/spice/examples/cider/serial/invchain.cir new file mode 100644 index 00000000..c05513a0 --- /dev/null +++ b/Windows/spice/examples/cider/serial/invchain.cir @@ -0,0 +1,34 @@ +4 STAGE RTL INVERTER CHAIN + +VIN 1 0 DC 0V PWL 0NS 0V 1NS 5V +VCC 12 0 DC 5.0V +RC1 12 3 2.5K +RB1 1 2 8K +Q1 3 2 0 QMOD AREA = 100P +RB2 3 4 8K +RC2 12 5 2.5K +Q2 5 4 0 QMOD AREA = 100P +RB3 5 6 8K +RC3 12 7 2.5K +Q3 7 6 0 QMOD AREA = 100P +RB4 7 8 8K +RC4 12 9 2.5K +Q4 9 8 0 QMOD AREA = 100P + +.PRINT TRAN V(3) V(5) V(9) +.TRAN 1E-9 10E-9 + +.MODEL QMOD NBJT LEVEL=1 ++ X.MESH NODE=1 LOC=0.0 ++ X.MESH NODE=61 LOC=3.0 ++ REGION NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 ++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 ++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB ++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 + +.OPTION ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/serial/meclgate.cir b/Windows/spice/examples/cider/serial/meclgate.cir new file mode 100644 index 00000000..7f5e88ba --- /dev/null +++ b/Windows/spice/examples/cider/serial/meclgate.cir @@ -0,0 +1,70 @@ +MOTOROLA MECL III ECL GATE +*.DC VIN -2.0 0 0.02 +.TRAN 0.2NS 20NS +VEE 22 0 -6.0 +VIN 1 0 PULSE -0.8 -1.8 0.2NS 0.2NS 0.2NS 10NS 20NS +RS 1 2 50 +Q1 4 2 6 QMOD AREA = 100P +Q2 4 3 6 QMOD AREA = 100P +Q3 5 7 6 QMOD AREA = 100P +Q4 0 8 7 QMOD AREA = 100P + +D1 8 9 DMOD +D2 9 10 DMOD + +RP1 3 22 50K +RC1 0 4 100 +RC2 0 5 112 +RE 6 22 380 +R1 7 22 2K +R2 0 8 350 +R3 10 22 1958 + +Q5 0 5 11 QMOD AREA = 100P +Q6 0 4 12 QMOD AREA = 100P + +RP2 11 22 560 +RP3 12 22 560 + +Q7 13 12 15 QMOD AREA = 100P +Q8 14 16 15 QMOD AREA = 100P + +RE2 15 22 380 +RC3 0 13 100 +RC4 0 14 112 + +Q9 0 17 16 QMOD AREA = 100P + +R4 16 22 2K +R5 0 17 350 +D3 17 18 DMOD +D4 18 19 DMOD +R6 19 22 1958 + +Q10 0 14 20 QMOD AREA = 100P +Q11 0 13 21 QMOD AREA = 100P + +RP4 20 22 560 +RP5 21 22 560 + +.MODEL DMOD D RS=40 TT=0.1NS CJO=0.9PF N=1 IS=1E-14 EG=1.11 VJ=0.8 M=0.5 + +.MODEL QMOD NBJT LEVEL=1 ++ X.MESH NODE=1 LOC=0.0 ++ X.MESH NODE=10 LOC=0.9 ++ X.MESH NODE=20 LOC=1.1 ++ X.MESH NODE=30 LOC=1.4 ++ X.MESH NODE=40 LOC=1.6 ++ X.MESH NODE=61 LOC=3.0 ++ REGION NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 ++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 ++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB ++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 + +.OPTIONS ACCT BYPASS=1 +.PRINT TRAN V(12) V(21) +.END diff --git a/Windows/spice/examples/cider/serial/nmosinv.cir b/Windows/spice/examples/cider/serial/nmosinv.cir new file mode 100644 index 00000000..b6fa11ab --- /dev/null +++ b/Windows/spice/examples/cider/serial/nmosinv.cir @@ -0,0 +1,51 @@ +RESISTIVE LOAD NMOS INVERTER +VIN 1 0 PWL 0 0.0 2NS 5 +VDD 3 0 DC 5.0 +RD 3 2 2.5K +M1 2 1 4 5 MMOD W=10UM +CL 2 0 2PF +VB 5 0 0 +VS 4 0 0 + +.MODEL MMOD NUMOS ++ X.MESH L=0.0 N=1 ++ X.MESH L=0.6 N=4 ++ X.MESH L=0.7 N=5 ++ X.MESH L=1.0 N=7 ++ X.MESH L=1.2 N=11 ++ X.MESH L=3.2 N=21 ++ X.MESH L=3.4 N=25 ++ X.MESH L=3.7 N=27 ++ X.MESH L=3.8 N=28 ++ X.MESH L=4.4 N=31 ++ ++ Y.MESH L=-.05 N=1 ++ Y.MESH L=0.0 N=5 ++ Y.MESH L=.05 N=9 ++ Y.MESH L=0.3 N=14 ++ Y.MESH L=2.0 N=19 ++ ++ REGION NUM=1 MATERIAL=1 Y.L=0.0 ++ MATERIAL NUM=1 SILICON ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ ++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 ++ MATERIAL NUM=2 OXIDE ++ ++ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 ++ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 ++ ++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 ++ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 ++ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 ++ ++ MODELS CONCMOB FIELDMOB ++ METHOD AC=DIRECT ONEC + +.TRAN 0.2NS 30NS +.OPTIONS ACCT BYPASS=1 +.PRINT TRAN V(1) V(2) +.END diff --git a/Windows/spice/examples/cider/serial/pass.cir b/Windows/spice/examples/cider/serial/pass.cir new file mode 100644 index 00000000..a15a6f61 --- /dev/null +++ b/Windows/spice/examples/cider/serial/pass.cir @@ -0,0 +1,55 @@ +TURNOFF TRANSIENT OF PASS TRANSISTOR + +M1 11 2 3 4 MMOD W=20UM +CS 1 0 6.0PF +CL 3 0 6.0PF +R1 3 6 200K +VIN 6 0 DC 0 +VDRN 1 11 DC 0 +VG 2 0 DC 5 PWL 0 5 0.1N 0 1 0 +VB 4 0 DC 0.0 + +.TRAN 0.05NS 0.2NS 0.0NS 0.05NS +.PRINT TRAN V(1) I(VDRN) +.IC V(1)=0 V(3)=0 +.OPTION ACCT BYPASS=1 + +.MODEL MMOD NUMOS ++ X.MESH L=0.0 N=1 ++ X.MESH L=0.6 N=4 ++ X.MESH L=0.7 N=5 ++ X.MESH L=1.0 N=7 ++ X.MESH L=1.2 N=11 ++ X.MESH L=3.2 N=21 ++ X.MESH L=3.4 N=25 ++ X.MESH L=3.7 N=27 ++ X.MESH L=3.8 N=28 ++ X.MESH L=4.4 N=31 ++ ++ Y.MESH L=-.05 N=1 ++ Y.MESH L=0.0 N=5 ++ Y.MESH L=.05 N=9 ++ Y.MESH L=0.3 N=14 ++ Y.MESH L=2.0 N=19 ++ ++ REGION NUM=1 MATERIAL=1 Y.L=0.0 ++ MATERIAL NUM=1 SILICON ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ ++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7 ++ MATERIAL NUM=2 OXIDE ++ ++ ELEC NUM=1 X.L=3.8 X.H=4.4 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=2 X.L=0.7 X.H=3.7 IY.L=1 IY.H=1 ++ ELEC NUM=3 X.L=0.0 X.H=0.6 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=4 X.L=0.0 X.H=4.4 Y.L=2.0 Y.H=2.0 ++ ++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=2.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=4.4 Y.L=0.0 Y.H=0.05 ++ DOPING UNIF N.TYPE CONC=1E20 X.L=0.0 X.H=1.1 Y.L=0.0 Y.H=0.2 ++ DOPING UNIF N.TYPE CONC=1E20 X.L=3.3 X.H=4.4 Y.L=0.0 Y.H=0.2 ++ ++ MODELS CONCMOB FIELDMOB ++ METHOD AC=DIRECT ONEC + +.END diff --git a/Windows/spice/examples/cider/serial/pullup.cir b/Windows/spice/examples/cider/serial/pullup.cir new file mode 100644 index 00000000..a4d7a4d1 --- /dev/null +++ b/Windows/spice/examples/cider/serial/pullup.cir @@ -0,0 +1,67 @@ +BICMOS INVERTER PULLUP CIRCUIT + +VDD 1 0 5.0V +VSS 2 0 0.0V + +VIN 3 0 0.75V + +VC 1 11 0.0V +VB 5 15 0.0V + +Q1 11 15 4 M_NPN AREA=4 +M1 5 3 1 1 M_PMOS W=20U L=2U AD=30P AS=30P PD=21U PS=21U + +CL 4 0 5.0PF + +.IC V(4)=0.75V V(5)=0.0V + +.MODEL M_PMOS PMOS VTO=-0.8 UO=250 TOX=25N NSUB=5E16 ++ UCRIT=10K UEXP=.15 VMAX=50K NEFF=2 XJ=.02U ++ LD=.15U CGSO=.1N CGDO=.1N CJ=.12M MJ=0.5 ++ CJSW=0.3N MJSW=0.5 LEVEL=2 + +.MODEL M_NPN NBJT LEVEL=2 ++ TITLE TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ $ SINCE ONLY HALF THE DEVICE IS SIMULATED, DOUBLE THE UNIT WIDTH TO GET ++ $ 1.0 UM EMITTER. ++ OPTIONS DEFW=2.0U ++ OUTPUT STATISTICS ++ ++ X.MESH W=2.0 H.E=0.02 H.M=0.5 R=2.0 ++ X.MESH W=0.5 H.S=0.02 H.M=0.2 R=2.0 ++ ++ Y.MESH L=-0.2 N=1 ++ Y.MESH L= 0.0 N=5 ++ Y.MESH W=0.10 H.E=0.004 H.M=0.05 R=2.5 ++ Y.MESH W=0.15 H.S=0.004 H.M=0.02 R=2.5 ++ Y.MESH W=1.05 H.S=0.02 H.M=0.1 R=2.5 ++ ++ DOMAIN NUM=1 MATERIAL=1 X.L=2.0 Y.H=0.0 ++ DOMAIN NUM=2 MATERIAL=2 X.H=2.0 Y.H=0.0 ++ DOMAIN NUM=3 MATERIAL=3 Y.L=0.0 ++ MATERIAL NUM=1 POLYSILICON ++ MATERIAL NUM=2 OXIDE ++ MATERIAL NUM=3 SILICON ++ ++ ELEC NUM=1 X.L=0.0 X.H=0.0 Y.L=1.1 Y.H=1.3 ++ ELEC NUM=2 X.L=0.0 X.H=0.5 Y.L=0.0 Y.H=0.0 ++ ELEC NUM=3 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=-0.2 ++ ++ DOPING GAUSS N.TYPE CONC=3E20 X.L=2.0 X.H=3.0 Y.L=-0.2 Y.H=0.0 ++ + CHAR.L=0.047 LAT.ROTATE ++ DOPING GAUSS P.TYPE CONC=5E18 X.L=0.0 X.H=5.0 Y.L=-0.2 Y.H=0.0 ++ + CHAR.L=0.100 LAT.ROTATE ++ DOPING GAUSS P.TYPE CONC=1E20 X.L=0.0 X.H=0.5 Y.L=-0.2 Y.H=0.0 ++ + CHAR.L=0.100 LAT.ROTATE RATIO=0.7 ++ DOPING UNIF N.TYPE CONC=1E16 X.L=0.0 X.H=5.0 Y.L=0.0 Y.H=1.3 ++ DOPING GAUSS N.TYPE CONC=5E19 X.L=0.0 X.H=5.0 Y.L=1.3 Y.H=1.3 ++ + CHAR.L=0.100 LAT.ROTATE ++ ++ METHOD AC=DIRECT ITLIM=10 ++ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB + +.TRAN 0.5NS 4.0NS +.PRINT TRAN V(3) V(4) + +.OPTION ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/serial/readme b/Windows/spice/examples/cider/serial/readme new file mode 100644 index 00000000..08f29304 --- /dev/null +++ b/Windows/spice/examples/cider/serial/readme @@ -0,0 +1,3 @@ +This directory contains the CIDER serial-version benchmarks used in the +thesis "Design-Oriented Mixed-Level Circuit and Device Simulation" by +David A. Gates. diff --git a/Windows/spice/examples/cider/serial/recovery.cir b/Windows/spice/examples/cider/serial/recovery.cir new file mode 100644 index 00000000..cd33be1e --- /dev/null +++ b/Windows/spice/examples/cider/serial/recovery.cir @@ -0,0 +1,40 @@ +DIODE REVERSE RECOVERY + +VPP 1 0 0.0V (PULSE 1.0V -1.0V 1NS 1PS 1PS 20NS 40NS) +VNN 2 0 0.0V +RS 1 3 1.0 +LS 3 4 0.5UH +DT 4 2 M_PIN AREA=1 + +.MODEL M_PIN NUMD LEVEL=2 ++ OPTIONS DEFW=100U ++ X.MESH N=1 L=0.0 ++ X.MESH N=2 L=0.2 ++ X.MESH N=4 L=0.4 ++ X.MESH N=8 L=0.6 ++ X.MESH N=13 L=1.0 ++ ++ Y.MESH N=1 L=0.0 ++ Y.MESH N=9 L=4.0 ++ Y.MESH N=24 L=10.0 ++ Y.MESH N=29 L=15.0 ++ Y.MESH N=34 L=20.0 ++ ++ DOMAIN NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON TN=20NS TP=20NS ++ ++ ELECTRODE NUM=1 X.L=0.6 X.H=1.0 Y.L=0.0 Y.H=0.0 ++ ELECTRODE NUM=2 X.L=-0.1 X.H=1.0 Y.L=20.0 Y.H=20.0 ++ ++ DOPING GAUSS P.TYPE CONC=1.0E19 CHAR.LEN=1.076 X.L=0.75 X.H=1.1 Y.H=0.0 ++ + LAT.ROTATE RATIO=0.1 ++ DOPING UNIF N.TYPE CONC=1.0E14 ++ DOPING GAUSS N.TYPE CONC=1.0E19 CHAR.LEN=1.614 X.L=-0.1 X.H=1.1 Y.L=20.0 ++ ++ MODELS BGN SRH AUGER CONCTAU CONCMOB FIELDMOB + +.OPTION ACCT BYPASS=1 +.TRAN 0.1NS 10NS +.PRINT TRAN V(3) I(VIN) + +.END diff --git a/Windows/spice/examples/cider/serial/rtlinv.cir b/Windows/spice/examples/cider/serial/rtlinv.cir new file mode 100644 index 00000000..ef0dd94d --- /dev/null +++ b/Windows/spice/examples/cider/serial/rtlinv.cir @@ -0,0 +1,25 @@ +RTL INVERTER + +VIN 1 0 DC 1 PWL 0 4 1NS 0 +VCC 12 0 DC 5.0 +RC1 12 3 2.5K +RB1 1 2 8K +Q1 3 2 0 QMOD AREA = 100P + +.OPTION ACCT BYPASS=1 +.TRAN 0.5N 5N +.PRINT TRAN V(2) V(3) + +.MODEL QMOD NBJT LEVEL=1 ++ X.MESH NODE=1 LOC=0.0 ++ X.MESH NODE=61 LOC=3.0 ++ REGION NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 ++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 ++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB ++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 + +.END diff --git a/Windows/spice/examples/cider/serial/vco.cir b/Windows/spice/examples/cider/serial/vco.cir new file mode 100644 index 00000000..852ddd7f --- /dev/null +++ b/Windows/spice/examples/cider/serial/vco.cir @@ -0,0 +1,41 @@ +VOLTAGE CONTROLLED OSCILLATOR + +RC1 7 5 1K +RC2 7 6 1K + +Q5 7 7 5 QMOD AREA = 100P +Q6 7 7 6 QMOD AREA = 100P + +Q3 7 5 2 QMOD AREA = 100P +Q4 7 6 1 QMOD AREA = 100P + +IB1 2 0 .5MA +IB2 1 0 .5MA +CB1 2 0 1PF +CB2 1 0 1PF + +Q1 5 1 3 QMOD AREA = 100P +Q2 6 2 4 QMOD AREA = 100P + +C1 3 4 .1UF + +IS1 3 0 DC 2.5MA PULSE 2.5MA 0.5MA 0 1US 1US 50MS +IS2 4 0 1MA +VCC 7 0 10 + +.MODEL QMOD NBJT LEVEL=1 ++ X.MESH NODE=1 LOC=0.0 ++ X.MESH NODE=61 LOC=3.0 ++ REGION NUM=1 MATERIAL=1 ++ MATERIAL NUM=1 SILICON NBGNN=1E17 NBGNP=1E17 ++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG ++ DOPING UNIF N.TYPE CONC=1E17 X.L=0.0 X.H=1.0 ++ DOPING UNIF P.TYPE CONC=1E16 X.L=0.0 X.H=1.5 ++ DOPING UNIF N.TYPE CONC=1E15 X.L=0.0 X.H=3.0 ++ MODELS BGNW SRH CONCTAU AUGER CONCMOB FIELDMOB ++ OPTIONS BASE.LENGTH=1.0 BASE.DEPTH=1.25 + +.OPTION ACCT BYPASS=1 +.TRAN 3US 600US 0 3US +.PRINT TRAN V(4) +.END |