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diff --git a/Windows/spice/examples/cider/parallel/BICMOS.LIB b/Windows/spice/examples/cider/parallel/BICMOS.LIB
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+**
+* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process
+*    Contains CIDER input descriptions as well as matching
+*    SPICE models for some of the CIDER models.
+**
+
+**
+* One-dimensional models for a
+* polysilicon emitter complementary bipolar process.
+* The default device size is 1um by 1um (LxW)
+**
+
+.model M_NPN1D nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0  n=51
++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
++ domain   num=1 material=1 x.l=0.0
++ domain   num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
++ doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
++ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob 
++ method devtol=1e-12 ac=direct itlim=15
+
+.model M_PNP1D nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0  n=51
++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
++ domain   num=1 material=1 x.l=0.0
++ domain   num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
++ doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
++ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob 
++ method devtol=1e-12 ac=direct itlim=15
+
+**
+* Two-dimensional models for a
+* polysilicon emitter complementary bipolar process.
+* The default device size is 1um by 1um (LxW)
+**
+
+.MODEL M_NPNS nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter.  Use a small mesh for this model.
++ options defw=2.0u
++ output stat
++ 
++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.10 h.e=0.004 h.m=0.05  r=2.5
++ y.mesh w=0.15 h.s=0.004 h.m=0.02  r=2.5
++ y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate
++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.MODEL M_NPN nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter length. Uses a finer mesh in the X direction.
++ options defw=2.0u
++ output stat
++ 
++ x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
++ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.10 h.e=0.003 h.m=0.01  r=1.5
++ y.mesh w=0.15 h.s=0.003 h.m=0.02  r=1.5
++ y.mesh w=0.35 h.s=0.02  h.m=0.2   r=1.5
++ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
++ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate
++ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.MODEL M_PNPS nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter length.  Use a small mesh for this model.
++ options defw=2.0u
++ output stat
++
++ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
++ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.12 h.e=0.004 h.m=0.05  r=2.5
++ y.mesh w=0.28 h.s=0.004 h.m=0.02  r=2.5
++ y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
++ 
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.200 lat.rotate
++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+.MODEL M_PNP nbjt level=2
++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
++ * Since half the device is simulated, double the unit width to get
++ * 1.0 um emitter length. Uses a finer mesh in the X direction.
++ options defw=2.0u
++ output stat
++ 
++ x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
++ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
++ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
++ 
++ y.mesh l=-0.2 n=1
++ y.mesh l= 0.0 n=5
++ y.mesh w=0.12 h.e=0.003 h.m=0.01  r=1.5
++ y.mesh w=0.28 h.s=0.003 h.m=0.02  r=1.5
++ y.mesh w=0.20 h.s=0.02  h.m=0.2   r=1.5
++ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
++ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
++
++ domain num=1 material=1 x.l=2.0 y.h=0.0
++ domain num=2 material=2 x.h=2.0 y.h=0.0
++ domain num=3 material=3 y.l=0.0
++ material num=1 polysilicon
++ material num=2 oxide
++ material num=3 silicon
++
++ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
++ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
++ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
++
++ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
++ + char.l=0.047 lat.rotate
++ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
++ + char.l=0.200 lat.rotate
++ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
++ + char.l=0.100 lat.rotate ratio=0.7
++ doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
++ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
++ + char.l=0.100 lat.rotate
++
++ method ac=direct itlim=10
++ models bgn srh auger conctau concmob fieldmob
+
+**
+* Two-dimensional models for a
+* complementary MOS process.
+* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided.
+**
+
+.MODEL M_NMOS_1 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_2 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_3 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_4 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_5 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_10 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_NMOS_50 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
++
++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
++ + char.l=0.30
++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
++ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss n.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss n.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=4.10
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_1 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_2 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_3 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
++ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_4 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
++ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_5 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
++ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_10 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
++ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn 
++ method ac=direct itlim=10 onec
+
+.MODEL M_PMOS_50 numos
++ output stat
++ 
++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
++ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
++
++ y.mesh l=-.0200 n=1
++ y.mesh l=0.0 n=6
++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
++
++ region num=1 material=1 y.h=0.0
++ region num=2 material=2 y.l=0.0
++ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
++ material num=1 oxide
++ material num=2 silicon
++
++ elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
++ elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
++ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
++ elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
++
++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
++ + char.l=0.30
++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
++ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++ doping gauss p.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
++ + char.l=0.16 lat.rotate ratio=0.65
++ doping gauss p.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
++ + char.l=0.03 lat.rotate ratio=0.65
++
++ contact num=2 workf=5.29
++ models concmob surfmob transmob fieldmob srh auger conctau bgn
++ method ac=direct itlim=10 onec
+
+**
+* BSIM1 NMOS and PMOS 1.0 \um models.
+* Gummel-Poon bipolar models.
+**
+.model M_NSIM_1 nmos level=4
++vfb= -1.1908
++phi= .8399
++k1= 1.5329
++k2= 193.7322m
++eta= 2m
++muz= 746.0
++u0= 90.0m
++x2mz= 10.1429
++x2e= -2.5m
++x3e= 0.2m
++x2u0= -10.0m
++mus= 975.0
++u1= .20
++x2ms= 0.0
++x2u1= 0.0
++x3ms= 10
++x3u1= 5.0m
++tox=2.00000e-02
++cgdo=2.0e-10
++cgso=2.0e-10
++cgbo=0.0
++temp= 27
++vdd= 7.0
++xpart
++n0= 1.5686
++nb= 94.6392m
++nd=0.00000e+00
++rsh=30.0         cj=7.000e-004     cjsw=4.20e-010
++js=1.00e-008     pb=0.700e000
++pbsw=0.8000e000  mj=0.5            mjsw=0.33
++wdf=0            dell=0.20u
+
+.model M_PSIM_1 pmos level=4
++vfb= -1.3674
++phi= .8414
++k1= 1.5686
++k2= 203m
++eta= 2m
++muz= 340.0
++u0= 35.0m
++x2mz= 6.0
++x2e= 0.0
++x3e= -0.2m
++x2u0= -15.0m
++mus= 440.0
++u1=  .38
++x2ms= 0.0
++x2u1= 0.0
++x3ms= -20
++x3u1= -10.0m
++tox=2.00000e-02
++cgdo=2.0e-10
++cgso=2.0e-10
++cgbo=0.0
++temp= 27
++vdd= 5.0
++xpart
++n0= 1.5686
++nb= 94.6392m
++nd=0.00000e+00
++rsh=80.0         cj=7.000e-004     cjsw=4.20e-010
++js=1.00e-008     pb=0.700e000
++pbsw=0.8000e000  mj=0.5            mjsw=0.33
++wdf=0            dell=0.17u
+
+.model M_GNPN npn
++ is=1.3e-16
++ nf=1.00 bf=262.5 ikf=25mA  vaf=20v
++ nr=1.00 br=97.5 ikr=0.5mA var=1.8v
++ rc=20.0
++ re=0.09
++ rb=15.0
++ ise=4.0e-16 ne=2.1
++ isc=7.2e-17 nc=2.0
++ tf=9.4ps itf=26uA xtf=0.5
++ tr=10ns
++ cje=89.44fF vje=0.95 mje=0.5
++ cjc=12.82fF vjc=0.73 mjc=0.49
+
+.model M_GPNP pnp
++ is=5.8e-17
++ nf=1.001 bf=96.4 ikf=12mA  vaf=29v
++ nr=1.0   br=17.3 ikr=0.2mA var=2.0v
++ rc=50.0
++ re=0.17
++ rb=20.0
++ ise=6.8e-17 ne=2.0
++ isc=9.0e-17 nc=2.1
++ tf=27.4ps itf=26uA xtf=0.5
++ tr=10ns
++ cje=55.36fF vje=0.95 mje=0.58
++ cjc=11.80fF vjc=0.72 mjc=0.46
diff --git a/Windows/spice/examples/cider/parallel/bicmpd.cir b/Windows/spice/examples/cider/parallel/bicmpd.cir
new file mode 100644
index 00000000..be26e40d
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/bicmpd.cir
@@ -0,0 +1,26 @@
+BICMOS INVERTER PULLDOWN CIRCUIT
+
+VSS 2 0 0V
+
+VIN 3 2 0V (PULSE 0.0V 4.2V 0NS 1NS 1NS 9NS 20NS)
+
+M1  8 3 5 11 M_NMOS_1 W=4U L=1U
+VD  4 8 0V
+VBK 11 2 0V
+
+Q1  10 7 9   M_NPNS AREA=8
+VC  4 10 0V
+VB  5 7 0V
+VE  9 2 0V
+
+CL  4 6 1PF
+VL  6 2 0V
+
+.IC V(10)=5.0V V(7)=0.0V 
+.TRAN 0.1NS 5NS 0NS 0.1NS
+.PLOT TRAN I(VIN)
+
+.INCLUDE BICMOS.LIB
+
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/Windows/spice/examples/cider/parallel/bicmpu.cir b/Windows/spice/examples/cider/parallel/bicmpu.cir
new file mode 100644
index 00000000..7067ce14
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/bicmpu.cir
@@ -0,0 +1,24 @@
+BICMOS INVERTER PULLUP CIRCUIT
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+VIN 3 0 0.75V
+
+VC  1 11 0.0V
+VB  5 15 0.0V
+
+Q1  11 15 4 M_NPNS   AREA=8
+M1  5 3 1 1 M_PMOS_1 W=10U L=1U
+
+CL  4 0 5.0PF
+
+.IC V(4)=0.75V V(5)=0.0V
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.5NS 4.0NS
+.PRINT TRAN V(3) V(4)
+
+.OPTION ACCT BYPASS=1
+.END
diff --git a/Windows/spice/examples/cider/parallel/clkfeed.cir b/Windows/spice/examples/cider/parallel/clkfeed.cir
new file mode 100644
index 00000000..d0a06f15
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/clkfeed.cir
@@ -0,0 +1,34 @@
+SWITCHED CURRENT CELL - CLOCK FEEDTHROUGH
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+IIN 13 0 0.0
+VIN 13 3 0.0
+VL  4 0 2.5V
+VCK 6 0 5.0V PULSE 5.0V 0.0V 5.0NS 5NS 5NS 20NS 50NS
+
+M1   3  3  2  2 M_NMOS_5 W=5U L=5U
+M2   4  5  2  2 M_NMOS_5 W=10U L=5U
+M3  23 26 25 22 M_NMOS_5 W=5U L=5U
+RLK1 3 0 100G
+RLK2 5 0 100G
+VD  3 23 0.0V
+VG  6 26 0.0V
+VS  5 25 0.0V
+VB  2 22 0.0V
+
+M4  7 7 1 1 M_PMOS_IDEAL  W=100U L=1U
+M5  3 7 1 1 M_PMOS_IDEAL  W=100U L=1U
+M6  4 7 1 1 M_PMOS_IDEAL  W=200U L=1U
+IREF 7 0 50UA 
+
+****** MODELS ******
+.MODEL M_PMOS_IDEAL PMOS VTO=-1.0V KP=100U
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.1NS 50NS
+
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END
diff --git a/Windows/spice/examples/cider/parallel/cmosamp.cir b/Windows/spice/examples/cider/parallel/cmosamp.cir
new file mode 100644
index 00000000..f88115b5
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/cmosamp.cir
@@ -0,0 +1,29 @@
+CMOS 2-STAGE OPERATIONAL AMPLIFIER
+
+VDD 1 0  2.5V
+VSS 2 0 -2.5V
+
+IBIAS 9 0 100UA
+
+VPL 3 0 0.0V AC 0.5V
+VMI 4 0 0.0V AC 0.5V 180
+
+M1  6 3 5 5 M_PMOS_1 W=15U  L=1U
+M2  7 4 5 5 M_PMOS_1 W=15U  L=1U
+M3  6 6 2 2 M_NMOS_1 W=7.5U L=1U
+M4  7 6 2 2 M_NMOS_1 W=7.5U L=1U
+M5  8 7 2 2 M_NMOS_1 W=15U  L=1U
+M6  9 9 1 1 M_PMOS_1 W=15U  L=1U
+M7  5 9 1 1 M_PMOS_1 W=15U  L=1U
+M8  8 9 1 1 M_PMOS_1 W=15U  L=1U
+
+*CC  7 8 0.1PF
+
+.INCLUDE BICMOS.LIB
+
+*.OP
+*.AC DEC 10 1K 100G
+.DC VPL -5MV 5MV 0.1MV
+
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END
diff --git a/Windows/spice/examples/cider/parallel/eclinv.cir b/Windows/spice/examples/cider/parallel/eclinv.cir
new file mode 100644
index 00000000..a63c1c14
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/eclinv.cir
@@ -0,0 +1,30 @@
+ECL INVERTER
+*** (FROM MEINERZHAGEN ET AL.)
+
+VCC 1 0 0.0V
+VEE 2 0 -5.2V
+
+VIN 3 0 -1.25V
+VRF 4 0 -1.25V
+
+*** INPUT STAGE
+Q1 5 3 9 M_NPNS AREA=8
+Q2 6 4 9 M_NPNS AREA=8
+R1 1 5 662
+R2 1 6 662
+R3 9 2 2.65K
+
+*** OUTPUT BUFFERS
+Q3 1 5 7 M_NPNS AREA=8
+Q4 1 6 8 M_NPNS AREA=8
+R4 7 2 4.06K
+R5 8 2 4.06K
+
+*** MODEL LIBRARY
+.INCLUDE BICMOS.LIB
+
+.DC VIN -2.00 0.001 0.05
+.PLOT DC V(7) V(8)
+
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/Windows/spice/examples/cider/parallel/ecpal.cir b/Windows/spice/examples/cider/parallel/ecpal.cir
new file mode 100644
index 00000000..4485a442
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/ecpal.cir
@@ -0,0 +1,19 @@
+EMITTER COUPLED PAIR WITH ACTIVE LOAD
+
+VCC	1 0 5V
+VEE	2 0 0V
+VINP	4 0 2.99925V  AC 0.5V
+VINM	7 0 3V        AC 0.5V 180
+IEE	5 2 0.1MA
+Q1	3 4 5 M_NPNS AREA=8
+Q2	6 7 5 M_NPNS AREA=8
+Q3	3 3 1 M_PNPS AREA=8
+Q4	6 3 1 M_PNPS AREA=8
+
+.AC DEC 10 10K 100G
+.PLOT AC VDB(6)
+
+.INCLUDE BICMOS.LIB
+
+.OPTIONS ACCT RELTOL=1E-6
+.END
diff --git a/Windows/spice/examples/cider/parallel/foobar b/Windows/spice/examples/cider/parallel/foobar
new file mode 100644
index 00000000..1e5e7b73
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/foobar
@@ -0,0 +1,10 @@
+\section*{BICMPD Benchmark}
+\section*{BICMPU Benchmark}
+\section*{CLKFEED Benchmark}
+\section*{CMOSAMP Benchmark}
+\section*{ECLINV Benchmark}
+\section*{ECPAL Benchmark}
+\section*{GMAMP Benchmark}
+\section*{LATCH Benchmark}
+\section*{PPEF Benchmarks}
+\section*{RINGOSC Benchmarks}
diff --git a/Windows/spice/examples/cider/parallel/gmamp.cir b/Windows/spice/examples/cider/parallel/gmamp.cir
new file mode 100644
index 00000000..e570beca
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/gmamp.cir
@@ -0,0 +1,34 @@
+BICMOS 3-STAGE AMPLIFIER
+*** IN GRAY & MEYER, 3RD ED. P.266, PROB. 3.12, 8.19
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+*** VOLTAGE INPUT
+*VIN 13 0 0.0V AC 1V
+*CIN 13 3 1UF
+
+*** CURRENT INPUT
+IIN 3 0 0.0 AC 1.0
+
+M1  4 3 2 2 M_NMOS_1 W=300U L=1U
+M2  7 7 2 2 M_NMOS_1 W=20U  L=1U
+
+Q1  6 5 4   M_NPNS AREA=40
+Q2  5 5 7   M_NPNS AREA=40
+Q3  1 6 8   M_NPNS AREA=40
+
+RL1 1 4     1K
+RL2 1 6     10K
+RB1 1 5     10K
+RL3 8 2     1K
+RF1 3 8     30K
+
+*** NUMERICAL MODEL LIBRARY ***
+.INCLUDE BICMOS.LIB
+
+.AC DEC 10 100KHZ 100GHZ
+.PLOT AC VDB(8)
+
+.OPTIONS ACCT BYPASS=1 KEEPOPINFO
+.END
diff --git a/Windows/spice/examples/cider/parallel/latch.cir b/Windows/spice/examples/cider/parallel/latch.cir
new file mode 100644
index 00000000..3ad63335
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/latch.cir
@@ -0,0 +1,46 @@
+STATIC LATCH
+***   IC=1MA, RE6=3K
+***   SPICE ORIGINAL 1-7-80, CIDER REVISED 4-16-93
+
+***   BIAS CIRCUIT
+***   RESISTORS
+RCC2 6 8 3.33K
+REE2 9 0 200
+***   TRANSISTORS
+Q1 6 8 4 M_NPN1D AREA=8
+Q2 8 4 9 M_NPN1D AREA=8
+
+***   MODELS
+.INCLUDE BICMOS.LIB
+
+***   SOURCES
+VCC 6 0 5V
+VREF 3 0 2.5V
+VRSET 1 0 PULSE(2V 3V 0.1NS 0.1NS 0.1NS 0.9NS 4NS)
+VSET  7 0 PULSE(2V 3V 2.1NS 0.1NS 0.1NS 0.9NS 4NS)
+
+***   LATCH
+X1 1 2 3 4 5 6 ECLNOR2
+X2 5 7 3 4 2 6 ECLNOR2
+
+***   SUBCIRCUITS
+.SUBCKT ECLNOR2 1 2 3 4 5 6
+**  RESISTORS
+RS 6 11 520
+RC2 11 10 900
+RE4 12 0 200
+RE6 5 0 6K
+**  TRANSISTORS
+Q1 9 1 8 M_NPN1D AREA=8
+Q2 9 2 8 M_NPN1D AREA=8
+Q3 11 3 8 M_NPN1D AREA=8
+Q4 8 4 12 M_NPN1D AREA=8
+Q5 10 10 9 M_NPN1D AREA=8
+Q6 6 9 5 M_NPN1D AREA=8
+.ENDS ECLNOR2
+
+***   CONTROL CARDS
+.TRAN 0.01NS 8NS
+.PRINT TRAN V(1) V(7) V(5) V(2)
+.OPTIONS ACCT BYPASS=1
+.END
diff --git a/Windows/spice/examples/cider/parallel/ppef.1d.cir b/Windows/spice/examples/cider/parallel/ppef.1d.cir
new file mode 100644
index 00000000..8690c665
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/ppef.1d.cir
@@ -0,0 +1,25 @@
+PUSH-PULL EMITTER FOLLOWER - ONE-DIMENSIONAL MODELS
+
+VCC 1 0  5.0V
+VEE 2 0 -5.0V
+
+VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
+VBU 13 3 0.7V
+VBL 3 23 0.7V
+
+RL  4 44  50
+VLD 44 0 0V
+
+Q1  5  13 4 M_NPN1D AREA=40
+Q2  4  5  1 M_PNP1D AREA=200
+
+Q3  6  23 4 M_PNP1D AREA=100
+Q4  4  6  2 M_NPN1D AREA=80
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.01MS 1.00001MS 0US 0.01MS
+.PLOT TRAN V(4)
+
+.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
+.END
diff --git a/Windows/spice/examples/cider/parallel/ppef.2d.cir b/Windows/spice/examples/cider/parallel/ppef.2d.cir
new file mode 100644
index 00000000..07fa10fb
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/ppef.2d.cir
@@ -0,0 +1,25 @@
+PUSH-PULL EMITTER FOLLOWER - TWO-DIMENSIONAL MODELS
+
+VCC 1 0  5.0V
+VEE 2 0 -5.0V
+
+VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
+VBU 13 3 0.7V
+VBL 3 23 0.7V
+
+RL  4 44  50
+VLD 44 0 0V
+
+Q1  5  13 4 M_NPNS AREA=40
+Q2  4  5  1 M_PNPS AREA=200
+
+Q3  6  23 4 M_PNPS AREA=100
+Q4  4  6  2 M_NPNS AREA=80
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.01MS 1.00001MS 0US 0.01MS
+.PLOT TRAN V(4)
+
+.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
+.END
diff --git a/Windows/spice/examples/cider/parallel/readme b/Windows/spice/examples/cider/parallel/readme
new file mode 100644
index 00000000..077c78f6
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/readme
@@ -0,0 +1,3 @@
+This directory contains the additional CIDER parallel-version benchmarks
+used in the thesis "Design-Oriented Mixed-Level Circuit and Device Simulation"
+by David A. Gates.
diff --git a/Windows/spice/examples/cider/parallel/ringosc.1u.cir b/Windows/spice/examples/cider/parallel/ringosc.1u.cir
new file mode 100644
index 00000000..2304c4eb
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/ringosc.1u.cir
@@ -0,0 +1,39 @@
+CMOS RING OSCILLATOR - 1UM DEVICES
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+X1 1 2 3 4 INV
+X2 1 2 4 5 INV
+X3 1 2 5 6 INV
+X4 1 2 6 7 INV
+X5 1 2 7 8 INV
+X6 1 2 8 9 INV
+X7 1 2 9 3 INV
+
+.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V
++   V(6)=0.0V V(7)=5.0V V(8)=0.0V V(9)=5.0V
+
+.SUBCKT INV 1   2   3   4
+*           VDD VSS VIN VOUT
+M1  14 13 15 16 M_PMOS_1 W=6.0U
+M2  24 23 25 26 M_NMOS_1 W=3.0U
+
+VGP 3 13 0.0V
+VDP 4 14 0.0V
+VSP 1 15 0.0V
+VBP 1 16 0.0V
+
+VGN 3 23 0.0V
+VDN 4 24 0.0V
+VSN 2 25 0.0V
+VBN 2 26 0.0V
+.ENDS INV
+
+.INCLUDE BICMOS.LIB
+
+.TRAN 0.1NS 1NS
+.PRINT TRAN V(3) V(4) V(5)
+
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END
diff --git a/Windows/spice/examples/cider/parallel/ringosc.2u.cir b/Windows/spice/examples/cider/parallel/ringosc.2u.cir
new file mode 100644
index 00000000..c79885ab
--- /dev/null
+++ b/Windows/spice/examples/cider/parallel/ringosc.2u.cir
@@ -0,0 +1,114 @@
+CMOS RING OSCILLATOR - 2UM DEVICES
+
+VDD 1 0 5.0V
+VSS 2 0 0.0V
+
+X1 1 2 3 4 INV
+X2 1 2 4 5 INV
+X3 1 2 5 6 INV
+X4 1 2 6 7 INV
+X5 1 2 7 8 INV
+X6 1 2 8 9 INV
+X7 1 2 9 3 INV
+
+.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V V(6)=0.0V
++ V(7)=5.0V V(8)=0.0V V(9)=5.0V
+
+.SUBCKT INV 1   2   3   4
+*           VDD VSS VIN VOUT
+M1  14 13 15 16 M_PMOS W=6.0U
+M2  24 23 25 26 M_NMOS W=3.0U
+
+VGP 3 13 0.0V
+VDP 4 14 0.0V
+VSP 1 15 0.0V
+VBP 1 16 0.0V
+
+VGN 3 23 0.0V
+VDN 4 24 0.0V
+VSN 2 25 0.0V
+VBN 2 26 0.0V
+.ENDS INV
+
+.MODEL M_NMOS NUMOS
++ X.MESH L=0.0 N=1
++ X.MESH L=0.6 N=4
++ X.MESH L=0.7 N=5
++ X.MESH L=1.0 N=7
++ X.MESH L=1.2 N=11
++ X.MESH L=3.2 N=21
++ X.MESH L=3.4 N=25
++ X.MESH L=3.7 N=27
++ X.MESH L=3.8 N=28
++ X.MESH L=4.4 N=31
++
++ Y.MESH L=-.05 N=1
++ Y.MESH L=0.0  N=5
++ Y.MESH L=.05  N=9
++ Y.MESH L=0.3  N=14
++ Y.MESH L=2.0  N=19
++
++ REGION NUM=1 MATERIAL=1 Y.L=0.0
++ MATERIAL NUM=1 SILICON
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++
++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
++ MATERIAL NUM=2 OXIDE
++
++ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
++ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
++ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
++ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
++
++ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
++ DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
++ DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
++ DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
++
++ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
++ METHOD AC=DIRECT ONEC
++ OUTPUT ^ALL.DEBUG
+
+.MODEL M_PMOS NUMOS
++ X.MESH L=0.0 N=1
++ X.MESH L=0.6 N=4
++ X.MESH L=0.7 N=5
++ X.MESH L=1.0 N=7
++ X.MESH L=1.2 N=11
++ X.MESH L=3.2 N=21
++ X.MESH L=3.4 N=25
++ X.MESH L=3.7 N=27
++ X.MESH L=3.8 N=28
++ X.MESH L=4.4 N=31
++
++ Y.MESH L=-.05 N=1
++ Y.MESH L=0.0  N=5
++ Y.MESH L=.05  N=9
++ Y.MESH L=0.3  N=14
++ Y.MESH L=2.0  N=19
++
++ REGION NUM=1 MATERIAL=1 Y.L=0.0
++ MATERIAL NUM=1 SILICON
++ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
++
++ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
++ MATERIAL NUM=2 OXIDE
++
++ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
++ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
++ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
++ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
++
++ DOPING UNIF N.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
++ DOPING UNIF P.TYPE CONC=3E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
++ DOPING UNIF P.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
++ DOPING UNIF P.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
++
++ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
++ METHOD AC=DIRECT ONEC
++ OUTPUT ^ALL.DEBUG
+
+.TRAN 0.1NS 5.0NS
+.PRINT V(4)
+.OPTIONS ACCT BYPASS=1 METHOD=GEAR
+.END