removed outdated dependencies

15 files changed, 0 insertions, 1389 deletions

diff --git a/Windows/spice/examples/cider/parallel/BICMOS.LIB b/Windows/spice/examples/cider/parallel/BICMOS.LIB
deleted file mode 100644
index 606570ca..00000000
--- a/Windows/spice/examples/cider/parallel/BICMOS.LIB
+++ /dev/null
@@ -1,931 +0,0 @@
-**
-* BICMOS.LIB: Library of models used in the 1.0 um CBiCMOS process
-*    Contains CIDER input descriptions as well as matching
-*    SPICE models for some of the CIDER models.
-**
-
-**
-* One-dimensional models for a
-* polysilicon emitter complementary bipolar process.
-* The default device size is 1um by 1um (LxW)
-**
-
-.model M_NPN1D nbjt level=1
-+ title One-Dimensional Numerical Bipolar
-+ options base.depth=0.15 base.area=0.1 base.length=0.5 defa=1p
-+ x.mesh loc=-0.2 n=1
-+ x.mesh loc=0.0  n=51
-+ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
-+ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
-+ domain   num=1 material=1 x.l=0.0
-+ domain   num=2 material=2 x.h=0.0
-+ material num=1 silicon
-+ mobility mat=1 concmod=ct fieldmod=ct
-+ material num=2 polysilicon
-+ mobility mat=2 concmod=ct fieldmod=ct
-+ doping gauss n.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
-+ doping gauss p.type conc=5e18  x.l=-0.2 x.h=0.0 char.len=0.100
-+ doping unif  n.type conc=1e16  x.l=0.0 x.h=1.3
-+ doping gauss n.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
-+ models bgn srh auger conctau concmob fieldmob 
-+ method devtol=1e-12 ac=direct itlim=15
-
-.model M_PNP1D nbjt level=1
-+ title One-Dimensional Numerical Bipolar
-+ options base.depth=0.2 base.area=0.1 base.length=0.5 defa=1p
-+ x.mesh loc=-0.2 n=1
-+ x.mesh loc=0.0  n=51
-+ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
-+ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
-+ domain   num=1 material=1 x.l=0.0
-+ domain   num=2 material=2 x.h=0.0
-+ material num=1 silicon
-+ mobility mat=1 concmod=ct fieldmod=ct
-+ material num=2 polysilicon
-+ mobility mat=2 concmod=ct fieldmod=ct
-+ doping gauss p.type conc=3e20  x.l=-0.2 x.h=0.0 char.len=0.047
-+ doping gauss n.type conc=5e17  x.l=-0.2 x.h=0.0 char.len=0.200
-+ doping unif  p.type conc=1e16  x.l=0.0 x.h=1.3
-+ doping gauss p.type conc=5e19  x.l=1.3 x.h=1.3 char.len=0.100
-+ models bgn srh auger conctau concmob fieldmob 
-+ method devtol=1e-12 ac=direct itlim=15
-
-**
-* Two-dimensional models for a
-* polysilicon emitter complementary bipolar process.
-* The default device size is 1um by 1um (LxW)
-**
-
-.MODEL M_NPNS nbjt level=2
-+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
-+ * Since half the device is simulated, double the unit width to get
-+ * 1.0 um emitter.  Use a small mesh for this model.
-+ options defw=2.0u
-+ output stat
-+ 
-+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
-+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
-+ 
-+ y.mesh l=-0.2 n=1
-+ y.mesh l= 0.0 n=5
-+ y.mesh w=0.10 h.e=0.004 h.m=0.05  r=2.5
-+ y.mesh w=0.15 h.s=0.004 h.m=0.02  r=2.5
-+ y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
-+
-+ domain num=1 material=1 x.l=2.0 y.h=0.0
-+ domain num=2 material=2 x.h=2.0 y.h=0.0
-+ domain num=3 material=3 y.l=0.0
-+ material num=1 polysilicon
-+ material num=2 oxide
-+ material num=3 silicon
-+
-+ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
-+ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
-+ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
-+
-+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.047 lat.rotate
-+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.100 lat.rotate
-+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
-+ + char.l=0.100 lat.rotate ratio=0.7
-+ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
-+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
-+ + char.l=0.100 lat.rotate
-+
-+ method ac=direct itlim=10
-+ models bgn srh auger conctau concmob fieldmob
-
-.MODEL M_NPN nbjt level=2
-+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
-+ * Since half the device is simulated, double the unit width to get
-+ * 1.0 um emitter length. Uses a finer mesh in the X direction.
-+ options defw=2.0u
-+ output stat
-+ 
-+ x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
-+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
-+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
-+ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
-+ 
-+ y.mesh l=-0.2 n=1
-+ y.mesh l= 0.0 n=5
-+ y.mesh w=0.10 h.e=0.003 h.m=0.01  r=1.5
-+ y.mesh w=0.15 h.s=0.003 h.m=0.02  r=1.5
-+ y.mesh w=0.35 h.s=0.02  h.m=0.2   r=1.5
-+ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
-+ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
-+
-+ domain num=1 material=1 x.l=2.0 y.h=0.0
-+ domain num=2 material=2 x.h=2.0 y.h=0.0
-+ domain num=3 material=3 y.l=0.0
-+ material num=1 polysilicon
-+ material num=2 oxide
-+ material num=3 silicon
-+
-+ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
-+ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
-+ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
-+
-+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.047 lat.rotate
-+ doping gauss p.type conc=5e18 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.100 lat.rotate
-+ doping gauss p.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
-+ + char.l=0.100 lat.rotate ratio=0.7
-+ doping unif  n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
-+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
-+ + char.l=0.100 lat.rotate
-+
-+ method ac=direct itlim=10
-+ models bgn srh auger conctau concmob fieldmob
-
-.MODEL M_PNPS nbjt level=2
-+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
-+ * Since half the device is simulated, double the unit width to get
-+ * 1.0 um emitter length.  Use a small mesh for this model.
-+ options defw=2.0u
-+ output stat
-+
-+ x.mesh w=2.0 h.e=0.02 h.m=0.5 r=2.0
-+ x.mesh w=0.5 h.s=0.02 h.m=0.2 r=2.0
-+ 
-+ y.mesh l=-0.2 n=1
-+ y.mesh l= 0.0 n=5
-+ y.mesh w=0.12 h.e=0.004 h.m=0.05  r=2.5
-+ y.mesh w=0.28 h.s=0.004 h.m=0.02  r=2.5
-+ y.mesh w=1.05 h.s=0.02  h.m=0.1   r=2.5
-+ 
-+ domain num=1 material=1 x.l=2.0 y.h=0.0
-+ domain num=2 material=2 x.h=2.0 y.h=0.0
-+ domain num=3 material=3 y.l=0.0
-+ material num=1 polysilicon
-+ material num=2 oxide
-+ material num=3 silicon
-+
-+ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
-+ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
-+ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
-+
-+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.047 lat.rotate
-+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.200 lat.rotate
-+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
-+ + char.l=0.100 lat.rotate ratio=0.7
-+ doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
-+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
-+ + char.l=0.100 lat.rotate
-+
-+ method ac=direct itlim=10
-+ models bgn srh auger conctau concmob fieldmob
-
-.MODEL M_PNP nbjt level=2
-+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
-+ * Since half the device is simulated, double the unit width to get
-+ * 1.0 um emitter length. Uses a finer mesh in the X direction.
-+ options defw=2.0u
-+ output stat
-+ 
-+ x.mesh w=0.5  h.e=0.075 h.m=0.2 r=2.0
-+ x.mesh w=0.75 h.s=0.075 h.m=0.2 r=2.0
-+ x.mesh w=0.75 h.e=0.05 h.m=0.2 r=1.5
-+ x.mesh w=0.5  h.s=0.05 h.m=0.1 r=1.5
-+ 
-+ y.mesh l=-0.2 n=1
-+ y.mesh l= 0.0 n=5
-+ y.mesh w=0.12 h.e=0.003 h.m=0.01  r=1.5
-+ y.mesh w=0.28 h.s=0.003 h.m=0.02  r=1.5
-+ y.mesh w=0.20 h.s=0.02  h.m=0.2   r=1.5
-+ y.mesh w=0.40 h.e=0.05  h.m=0.2   r=1.5
-+ y.mesh w=0.30 h.s=0.05  h.m=0.1   r=1.5
-+
-+ domain num=1 material=1 x.l=2.0 y.h=0.0
-+ domain num=2 material=2 x.h=2.0 y.h=0.0
-+ domain num=3 material=3 y.l=0.0
-+ material num=1 polysilicon
-+ material num=2 oxide
-+ material num=3 silicon
-+
-+ elec num=1 x.l=0.0  x.h=0.0  y.l=1.1  y.h=1.3
-+ elec num=2 x.l=0.0  x.h=0.5  y.l=0.0  y.h=0.0
-+ elec num=3 x.l=2.0  x.h=3.0  y.l=-0.2 y.h=-0.2
-+
-+ doping gauss p.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.047 lat.rotate
-+ doping gauss n.type conc=5e17 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
-+ + char.l=0.200 lat.rotate
-+ doping gauss n.type conc=1e20 x.l=0.0 x.h=0.5 y.l=-0.2 y.h=0.0
-+ + char.l=0.100 lat.rotate ratio=0.7
-+ doping unif  p.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
-+ doping gauss p.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
-+ + char.l=0.100 lat.rotate
-+
-+ method ac=direct itlim=10
-+ models bgn srh auger conctau concmob fieldmob
-
-**
-* Two-dimensional models for a
-* complementary MOS process.
-* Device models for 1um, 2um, 3um, 4um, 5um, 10um and 50um are provided.
-**
-
-.MODEL M_NMOS_1 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
-+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
-+ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss n.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=4.10
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_NMOS_2 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
-+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
-+ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss n.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=4.10
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_NMOS_3 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
-+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
-+ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss n.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=4.10
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_NMOS_4 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
-+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
-+ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss n.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=4.10
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_NMOS_5 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
-+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
-+ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss n.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=4.10
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_NMOS_10 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
-+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
-+ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss n.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=4.10
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_NMOS_50 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
-+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
-+ doping gauss n.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss n.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss n.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=4.10
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_PMOS_1 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0
-+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=2 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=2.5  x.h=3.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=2  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=3.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1
-+ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss p.type conc=4e17  x.l=2 x.h=3.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=5.29
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_PMOS_2 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.005 h.m=0.2 r=2.0
-+ x.mesh w=0.9 h.e=0.005 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=3 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=3.5  x.h=4.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=3  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=4.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=4.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=4.1 y.l=0.0 y.h=2.1
-+ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss p.type conc=4e17  x.l=3 x.h=4.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=3.05 x.h=4.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=5.29
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_PMOS_3 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=1.4 h.s=0.005 h.m=0.3 r=2.0
-+ x.mesh w=1.4 h.e=0.005 h.m=0.3 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=4 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=4.5  x.h=5.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=4  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=5.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=5.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=5.1 y.l=0.0 y.h=2.1
-+ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss p.type conc=4e17  x.l=4 x.h=5.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=4.05 x.h=5.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=5.29
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_PMOS_4 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=1.9 h.s=0.005 h.m=0.4 r=2.0
-+ x.mesh w=1.9 h.e=0.005 h.m=0.4 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=5 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=5.5  x.h=6.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=5  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=6.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=6.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=6.1 y.l=0.0 y.h=2.1
-+ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss p.type conc=4e17  x.l=5 x.h=6.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=5.05 x.h=6.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=5.29
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_PMOS_5 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=2.4 h.s=0.005 h.m=0.5 r=2.0
-+ x.mesh w=2.4 h.e=0.005 h.m=0.5 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=6 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=6.5  x.h=7.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=6  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=7.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=7.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=7.1 y.l=0.0 y.h=2.1
-+ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss p.type conc=4e17  x.l=6 x.h=7.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=6.05 x.h=7.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=5.29
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_PMOS_10 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=4.9 h.s=0.005 h.m=1 r=2.0
-+ x.mesh w=4.9 h.e=0.005 h.m=1 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=11 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=11.5  x.h=12.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=11  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=12.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=12.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=12.1 y.l=0.0 y.h=2.1
-+ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss p.type conc=4e17  x.l=11 x.h=12.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=11.05 x.h=12.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=5.29
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn 
-+ method ac=direct itlim=10 onec
-
-.MODEL M_PMOS_50 numos
-+ output stat
-+ 
-+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=24.9 h.s=0.005 h.m=5 r=2.0
-+ x.mesh w=24.9 h.e=0.005 h.m=5 r=2.0
-+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0
-+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0
-+
-+ y.mesh l=-.0200 n=1
-+ y.mesh l=0.0 n=6
-+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0
-+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0
-+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0
-+
-+ region num=1 material=1 y.h=0.0
-+ region num=2 material=2 y.l=0.0
-+ interface dom=2 nei=1 x.l=1 x.h=51 layer.width=0.0
-+ material num=1 oxide
-+ material num=2 silicon
-+
-+ elec num=1 x.l=51.5  x.h=52.1  y.l=0.0 y.h=0.0
-+ elec num=2 x.l=1 x.h=51  iy.l=1  iy.h=1
-+ elec num=3 x.l=-0.1  x.h=0.5  y.l=0.0 y.h=0.0
-+ elec num=4 x.l=-0.1  x.h=52.1 y.l=2.0 y.h=2.0
-+
-+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=52.1 y.l=0.0
-+ + char.l=0.30
-+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=52.1 y.l=0.0 y.h=2.1
-+ doping gauss p.type conc=4e17  x.l=-0.1 x.h=1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+ doping gauss p.type conc=4e17  x.l=51 x.h=52.1 y.l=0.0 y.h=0.0
-+ + char.l=0.16 lat.rotate ratio=0.65
-+ doping gauss p.type conc=1e20  x.l=51.05 x.h=52.1 y.l=0.0 y.h=0.08
-+ + char.l=0.03 lat.rotate ratio=0.65
-+
-+ contact num=2 workf=5.29
-+ models concmob surfmob transmob fieldmob srh auger conctau bgn
-+ method ac=direct itlim=10 onec
-
-**
-* BSIM1 NMOS and PMOS 1.0 \um models.
-* Gummel-Poon bipolar models.
-**
-.model M_NSIM_1 nmos level=4
-+vfb= -1.1908
-+phi= .8399
-+k1= 1.5329
-+k2= 193.7322m
-+eta= 2m
-+muz= 746.0
-+u0= 90.0m
-+x2mz= 10.1429
-+x2e= -2.5m
-+x3e= 0.2m
-+x2u0= -10.0m
-+mus= 975.0
-+u1= .20
-+x2ms= 0.0
-+x2u1= 0.0
-+x3ms= 10
-+x3u1= 5.0m
-+tox=2.00000e-02
-+cgdo=2.0e-10
-+cgso=2.0e-10
-+cgbo=0.0
-+temp= 27
-+vdd= 7.0
-+xpart
-+n0= 1.5686
-+nb= 94.6392m
-+nd=0.00000e+00
-+rsh=30.0         cj=7.000e-004     cjsw=4.20e-010
-+js=1.00e-008     pb=0.700e000
-+pbsw=0.8000e000  mj=0.5            mjsw=0.33
-+wdf=0            dell=0.20u
-
-.model M_PSIM_1 pmos level=4
-+vfb= -1.3674
-+phi= .8414
-+k1= 1.5686
-+k2= 203m
-+eta= 2m
-+muz= 340.0
-+u0= 35.0m
-+x2mz= 6.0
-+x2e= 0.0
-+x3e= -0.2m
-+x2u0= -15.0m
-+mus= 440.0
-+u1=  .38
-+x2ms= 0.0
-+x2u1= 0.0
-+x3ms= -20
-+x3u1= -10.0m
-+tox=2.00000e-02
-+cgdo=2.0e-10
-+cgso=2.0e-10
-+cgbo=0.0
-+temp= 27
-+vdd= 5.0
-+xpart
-+n0= 1.5686
-+nb= 94.6392m
-+nd=0.00000e+00
-+rsh=80.0         cj=7.000e-004     cjsw=4.20e-010
-+js=1.00e-008     pb=0.700e000
-+pbsw=0.8000e000  mj=0.5            mjsw=0.33
-+wdf=0            dell=0.17u
-
-.model M_GNPN npn
-+ is=1.3e-16
-+ nf=1.00 bf=262.5 ikf=25mA  vaf=20v
-+ nr=1.00 br=97.5 ikr=0.5mA var=1.8v
-+ rc=20.0
-+ re=0.09
-+ rb=15.0
-+ ise=4.0e-16 ne=2.1
-+ isc=7.2e-17 nc=2.0
-+ tf=9.4ps itf=26uA xtf=0.5
-+ tr=10ns
-+ cje=89.44fF vje=0.95 mje=0.5
-+ cjc=12.82fF vjc=0.73 mjc=0.49
-
-.model M_GPNP pnp
-+ is=5.8e-17
-+ nf=1.001 bf=96.4 ikf=12mA  vaf=29v
-+ nr=1.0   br=17.3 ikr=0.2mA var=2.0v
-+ rc=50.0
-+ re=0.17
-+ rb=20.0
-+ ise=6.8e-17 ne=2.0
-+ isc=9.0e-17 nc=2.1
-+ tf=27.4ps itf=26uA xtf=0.5
-+ tr=10ns
-+ cje=55.36fF vje=0.95 mje=0.58
-+ cjc=11.80fF vjc=0.72 mjc=0.46
diff --git a/Windows/spice/examples/cider/parallel/bicmpd.cir b/Windows/spice/examples/cider/parallel/bicmpd.cir
deleted file mode 100644
index be26e40d..00000000
--- a/Windows/spice/examples/cider/parallel/bicmpd.cir
+++ /dev/null
@@ -1,26 +0,0 @@
-BICMOS INVERTER PULLDOWN CIRCUIT
-
-VSS 2 0 0V
-
-VIN 3 2 0V (PULSE 0.0V 4.2V 0NS 1NS 1NS 9NS 20NS)
-
-M1  8 3 5 11 M_NMOS_1 W=4U L=1U
-VD  4 8 0V
-VBK 11 2 0V
-
-Q1  10 7 9   M_NPNS AREA=8
-VC  4 10 0V
-VB  5 7 0V
-VE  9 2 0V
-
-CL  4 6 1PF
-VL  6 2 0V
-
-.IC V(10)=5.0V V(7)=0.0V 
-.TRAN 0.1NS 5NS 0NS 0.1NS
-.PLOT TRAN I(VIN)
-
-.INCLUDE BICMOS.LIB
-
-.OPTIONS ACCT BYPASS=1
-.END
diff --git a/Windows/spice/examples/cider/parallel/bicmpu.cir b/Windows/spice/examples/cider/parallel/bicmpu.cir
deleted file mode 100644
index 7067ce14..00000000
--- a/Windows/spice/examples/cider/parallel/bicmpu.cir
+++ /dev/null
@@ -1,24 +0,0 @@
-BICMOS INVERTER PULLUP CIRCUIT
-
-VDD 1 0 5.0V
-VSS 2 0 0.0V
-
-VIN 3 0 0.75V
-
-VC  1 11 0.0V
-VB  5 15 0.0V
-
-Q1  11 15 4 M_NPNS   AREA=8
-M1  5 3 1 1 M_PMOS_1 W=10U L=1U
-
-CL  4 0 5.0PF
-
-.IC V(4)=0.75V V(5)=0.0V
-
-.INCLUDE BICMOS.LIB
-
-.TRAN 0.5NS 4.0NS
-.PRINT TRAN V(3) V(4)
-
-.OPTION ACCT BYPASS=1
-.END
diff --git a/Windows/spice/examples/cider/parallel/clkfeed.cir b/Windows/spice/examples/cider/parallel/clkfeed.cir
deleted file mode 100644
index d0a06f15..00000000
--- a/Windows/spice/examples/cider/parallel/clkfeed.cir
+++ /dev/null
@@ -1,34 +0,0 @@
-SWITCHED CURRENT CELL - CLOCK FEEDTHROUGH
-
-VDD 1 0 5.0V
-VSS 2 0 0.0V
-
-IIN 13 0 0.0
-VIN 13 3 0.0
-VL  4 0 2.5V
-VCK 6 0 5.0V PULSE 5.0V 0.0V 5.0NS 5NS 5NS 20NS 50NS
-
-M1   3  3  2  2 M_NMOS_5 W=5U L=5U
-M2   4  5  2  2 M_NMOS_5 W=10U L=5U
-M3  23 26 25 22 M_NMOS_5 W=5U L=5U
-RLK1 3 0 100G
-RLK2 5 0 100G
-VD  3 23 0.0V
-VG  6 26 0.0V
-VS  5 25 0.0V
-VB  2 22 0.0V
-
-M4  7 7 1 1 M_PMOS_IDEAL  W=100U L=1U
-M5  3 7 1 1 M_PMOS_IDEAL  W=100U L=1U
-M6  4 7 1 1 M_PMOS_IDEAL  W=200U L=1U
-IREF 7 0 50UA 
-
-****** MODELS ******
-.MODEL M_PMOS_IDEAL PMOS VTO=-1.0V KP=100U
-
-.INCLUDE BICMOS.LIB
-
-.TRAN 0.1NS 50NS
-
-.OPTIONS ACCT BYPASS=1 METHOD=GEAR
-.END
diff --git a/Windows/spice/examples/cider/parallel/cmosamp.cir b/Windows/spice/examples/cider/parallel/cmosamp.cir
deleted file mode 100644
index f88115b5..00000000
--- a/Windows/spice/examples/cider/parallel/cmosamp.cir
+++ /dev/null
@@ -1,29 +0,0 @@
-CMOS 2-STAGE OPERATIONAL AMPLIFIER
-
-VDD 1 0  2.5V
-VSS 2 0 -2.5V
-
-IBIAS 9 0 100UA
-
-VPL 3 0 0.0V AC 0.5V
-VMI 4 0 0.0V AC 0.5V 180
-
-M1  6 3 5 5 M_PMOS_1 W=15U  L=1U
-M2  7 4 5 5 M_PMOS_1 W=15U  L=1U
-M3  6 6 2 2 M_NMOS_1 W=7.5U L=1U
-M4  7 6 2 2 M_NMOS_1 W=7.5U L=1U
-M5  8 7 2 2 M_NMOS_1 W=15U  L=1U
-M6  9 9 1 1 M_PMOS_1 W=15U  L=1U
-M7  5 9 1 1 M_PMOS_1 W=15U  L=1U
-M8  8 9 1 1 M_PMOS_1 W=15U  L=1U
-
-*CC  7 8 0.1PF
-
-.INCLUDE BICMOS.LIB
-
-*.OP
-*.AC DEC 10 1K 100G
-.DC VPL -5MV 5MV 0.1MV
-
-.OPTIONS ACCT BYPASS=1 METHOD=GEAR
-.END
diff --git a/Windows/spice/examples/cider/parallel/eclinv.cir b/Windows/spice/examples/cider/parallel/eclinv.cir
deleted file mode 100644
index a63c1c14..00000000
--- a/Windows/spice/examples/cider/parallel/eclinv.cir
+++ /dev/null
@@ -1,30 +0,0 @@
-ECL INVERTER
-*** (FROM MEINERZHAGEN ET AL.)
-
-VCC 1 0 0.0V
-VEE 2 0 -5.2V
-
-VIN 3 0 -1.25V
-VRF 4 0 -1.25V
-
-*** INPUT STAGE
-Q1 5 3 9 M_NPNS AREA=8
-Q2 6 4 9 M_NPNS AREA=8
-R1 1 5 662
-R2 1 6 662
-R3 9 2 2.65K
-
-*** OUTPUT BUFFERS
-Q3 1 5 7 M_NPNS AREA=8
-Q4 1 6 8 M_NPNS AREA=8
-R4 7 2 4.06K
-R5 8 2 4.06K
-
-*** MODEL LIBRARY
-.INCLUDE BICMOS.LIB
-
-.DC VIN -2.00 0.001 0.05
-.PLOT DC V(7) V(8)
-
-.OPTIONS ACCT BYPASS=1
-.END
diff --git a/Windows/spice/examples/cider/parallel/ecpal.cir b/Windows/spice/examples/cider/parallel/ecpal.cir
deleted file mode 100644
index 4485a442..00000000
--- a/Windows/spice/examples/cider/parallel/ecpal.cir
+++ /dev/null
@@ -1,19 +0,0 @@
-EMITTER COUPLED PAIR WITH ACTIVE LOAD
-
-VCC	1 0 5V
-VEE	2 0 0V
-VINP	4 0 2.99925V  AC 0.5V
-VINM	7 0 3V        AC 0.5V 180
-IEE	5 2 0.1MA
-Q1	3 4 5 M_NPNS AREA=8
-Q2	6 7 5 M_NPNS AREA=8
-Q3	3 3 1 M_PNPS AREA=8
-Q4	6 3 1 M_PNPS AREA=8
-
-.AC DEC 10 10K 100G
-.PLOT AC VDB(6)
-
-.INCLUDE BICMOS.LIB
-
-.OPTIONS ACCT RELTOL=1E-6
-.END
diff --git a/Windows/spice/examples/cider/parallel/foobar b/Windows/spice/examples/cider/parallel/foobar
deleted file mode 100644
index 1e5e7b73..00000000
--- a/Windows/spice/examples/cider/parallel/foobar
+++ /dev/null
@@ -1,10 +0,0 @@
-\section*{BICMPD Benchmark}
-\section*{BICMPU Benchmark}
-\section*{CLKFEED Benchmark}
-\section*{CMOSAMP Benchmark}
-\section*{ECLINV Benchmark}
-\section*{ECPAL Benchmark}
-\section*{GMAMP Benchmark}
-\section*{LATCH Benchmark}
-\section*{PPEF Benchmarks}
-\section*{RINGOSC Benchmarks}
diff --git a/Windows/spice/examples/cider/parallel/gmamp.cir b/Windows/spice/examples/cider/parallel/gmamp.cir
deleted file mode 100644
index e570beca..00000000
--- a/Windows/spice/examples/cider/parallel/gmamp.cir
+++ /dev/null
@@ -1,34 +0,0 @@
-BICMOS 3-STAGE AMPLIFIER
-*** IN GRAY & MEYER, 3RD ED. P.266, PROB. 3.12, 8.19
-
-VDD 1 0 5.0V
-VSS 2 0 0.0V
-
-*** VOLTAGE INPUT
-*VIN 13 0 0.0V AC 1V
-*CIN 13 3 1UF
-
-*** CURRENT INPUT
-IIN 3 0 0.0 AC 1.0
-
-M1  4 3 2 2 M_NMOS_1 W=300U L=1U
-M2  7 7 2 2 M_NMOS_1 W=20U  L=1U
-
-Q1  6 5 4   M_NPNS AREA=40
-Q2  5 5 7   M_NPNS AREA=40
-Q3  1 6 8   M_NPNS AREA=40
-
-RL1 1 4     1K
-RL2 1 6     10K
-RB1 1 5     10K
-RL3 8 2     1K
-RF1 3 8     30K
-
-*** NUMERICAL MODEL LIBRARY ***
-.INCLUDE BICMOS.LIB
-
-.AC DEC 10 100KHZ 100GHZ
-.PLOT AC VDB(8)
-
-.OPTIONS ACCT BYPASS=1 KEEPOPINFO
-.END
diff --git a/Windows/spice/examples/cider/parallel/latch.cir b/Windows/spice/examples/cider/parallel/latch.cir
deleted file mode 100644
index 3ad63335..00000000
--- a/Windows/spice/examples/cider/parallel/latch.cir
+++ /dev/null
@@ -1,46 +0,0 @@
-STATIC LATCH
-***   IC=1MA, RE6=3K
-***   SPICE ORIGINAL 1-7-80, CIDER REVISED 4-16-93
-
-***   BIAS CIRCUIT
-***   RESISTORS
-RCC2 6 8 3.33K
-REE2 9 0 200
-***   TRANSISTORS
-Q1 6 8 4 M_NPN1D AREA=8
-Q2 8 4 9 M_NPN1D AREA=8
-
-***   MODELS
-.INCLUDE BICMOS.LIB
-
-***   SOURCES
-VCC 6 0 5V
-VREF 3 0 2.5V
-VRSET 1 0 PULSE(2V 3V 0.1NS 0.1NS 0.1NS 0.9NS 4NS)
-VSET  7 0 PULSE(2V 3V 2.1NS 0.1NS 0.1NS 0.9NS 4NS)
-
-***   LATCH
-X1 1 2 3 4 5 6 ECLNOR2
-X2 5 7 3 4 2 6 ECLNOR2
-
-***   SUBCIRCUITS
-.SUBCKT ECLNOR2 1 2 3 4 5 6
-**  RESISTORS
-RS 6 11 520
-RC2 11 10 900
-RE4 12 0 200
-RE6 5 0 6K
-**  TRANSISTORS
-Q1 9 1 8 M_NPN1D AREA=8
-Q2 9 2 8 M_NPN1D AREA=8
-Q3 11 3 8 M_NPN1D AREA=8
-Q4 8 4 12 M_NPN1D AREA=8
-Q5 10 10 9 M_NPN1D AREA=8
-Q6 6 9 5 M_NPN1D AREA=8
-.ENDS ECLNOR2
-
-***   CONTROL CARDS
-.TRAN 0.01NS 8NS
-.PRINT TRAN V(1) V(7) V(5) V(2)
-.OPTIONS ACCT BYPASS=1
-.END
diff --git a/Windows/spice/examples/cider/parallel/ppef.1d.cir b/Windows/spice/examples/cider/parallel/ppef.1d.cir
deleted file mode 100644
index 8690c665..00000000
--- a/Windows/spice/examples/cider/parallel/ppef.1d.cir
+++ /dev/null
@@ -1,25 +0,0 @@
-PUSH-PULL EMITTER FOLLOWER - ONE-DIMENSIONAL MODELS
-
-VCC 1 0  5.0V
-VEE 2 0 -5.0V
-
-VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
-VBU 13 3 0.7V
-VBL 3 23 0.7V
-
-RL  4 44  50
-VLD 44 0 0V
-
-Q1  5  13 4 M_NPN1D AREA=40
-Q2  4  5  1 M_PNP1D AREA=200
-
-Q3  6  23 4 M_PNP1D AREA=100
-Q4  4  6  2 M_NPN1D AREA=80
-
-.INCLUDE BICMOS.LIB
-
-.TRAN 0.01MS 1.00001MS 0US 0.01MS
-.PLOT TRAN V(4)
-
-.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
-.END
diff --git a/Windows/spice/examples/cider/parallel/ppef.2d.cir b/Windows/spice/examples/cider/parallel/ppef.2d.cir
deleted file mode 100644
index 07fa10fb..00000000
--- a/Windows/spice/examples/cider/parallel/ppef.2d.cir
+++ /dev/null
@@ -1,25 +0,0 @@
-PUSH-PULL EMITTER FOLLOWER - TWO-DIMENSIONAL MODELS
-
-VCC 1 0  5.0V
-VEE 2 0 -5.0V
-
-VIN 3 0  0.0V (SIN 0.0V 0.1V 1KHZ) AC 1
-VBU 13 3 0.7V
-VBL 3 23 0.7V
-
-RL  4 44  50
-VLD 44 0 0V
-
-Q1  5  13 4 M_NPNS AREA=40
-Q2  4  5  1 M_PNPS AREA=200
-
-Q3  6  23 4 M_PNPS AREA=100
-Q4  4  6  2 M_NPNS AREA=80
-
-.INCLUDE BICMOS.LIB
-
-.TRAN 0.01MS 1.00001MS 0US 0.01MS
-.PLOT TRAN V(4)
-
-.OPTIONS ACCT BYPASS=1 TEMP=26.85OC RELTOL=1E-5
-.END
diff --git a/Windows/spice/examples/cider/parallel/readme b/Windows/spice/examples/cider/parallel/readme
deleted file mode 100644
index 077c78f6..00000000
--- a/Windows/spice/examples/cider/parallel/readme
+++ /dev/null
@@ -1,3 +0,0 @@
-This directory contains the additional CIDER parallel-version benchmarks
-used in the thesis "Design-Oriented Mixed-Level Circuit and Device Simulation"
-by David A. Gates.
diff --git a/Windows/spice/examples/cider/parallel/ringosc.1u.cir b/Windows/spice/examples/cider/parallel/ringosc.1u.cir
deleted file mode 100644
index 2304c4eb..00000000
--- a/Windows/spice/examples/cider/parallel/ringosc.1u.cir
+++ /dev/null
@@ -1,39 +0,0 @@
-CMOS RING OSCILLATOR - 1UM DEVICES
-
-VDD 1 0 5.0V
-VSS 2 0 0.0V
-
-X1 1 2 3 4 INV
-X2 1 2 4 5 INV
-X3 1 2 5 6 INV
-X4 1 2 6 7 INV
-X5 1 2 7 8 INV
-X6 1 2 8 9 INV
-X7 1 2 9 3 INV
-
-.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V
-+   V(6)=0.0V V(7)=5.0V V(8)=0.0V V(9)=5.0V
-
-.SUBCKT INV 1   2   3   4
-*           VDD VSS VIN VOUT
-M1  14 13 15 16 M_PMOS_1 W=6.0U
-M2  24 23 25 26 M_NMOS_1 W=3.0U
-
-VGP 3 13 0.0V
-VDP 4 14 0.0V
-VSP 1 15 0.0V
-VBP 1 16 0.0V
-
-VGN 3 23 0.0V
-VDN 4 24 0.0V
-VSN 2 25 0.0V
-VBN 2 26 0.0V
-.ENDS INV
-
-.INCLUDE BICMOS.LIB
-
-.TRAN 0.1NS 1NS
-.PRINT TRAN V(3) V(4) V(5)
-
-.OPTIONS ACCT BYPASS=1 METHOD=GEAR
-.END
diff --git a/Windows/spice/examples/cider/parallel/ringosc.2u.cir b/Windows/spice/examples/cider/parallel/ringosc.2u.cir
deleted file mode 100644
index c79885ab..00000000
--- a/Windows/spice/examples/cider/parallel/ringosc.2u.cir
+++ /dev/null
@@ -1,114 +0,0 @@
-CMOS RING OSCILLATOR - 2UM DEVICES
-
-VDD 1 0 5.0V
-VSS 2 0 0.0V
-
-X1 1 2 3 4 INV
-X2 1 2 4 5 INV
-X3 1 2 5 6 INV
-X4 1 2 6 7 INV
-X5 1 2 7 8 INV
-X6 1 2 8 9 INV
-X7 1 2 9 3 INV
-
-.IC V(3)=0.0V V(4)=2.5V V(5)=5.0V V(6)=0.0V
-+ V(7)=5.0V V(8)=0.0V V(9)=5.0V
-
-.SUBCKT INV 1   2   3   4
-*           VDD VSS VIN VOUT
-M1  14 13 15 16 M_PMOS W=6.0U
-M2  24 23 25 26 M_NMOS W=3.0U
-
-VGP 3 13 0.0V
-VDP 4 14 0.0V
-VSP 1 15 0.0V
-VBP 1 16 0.0V
-
-VGN 3 23 0.0V
-VDN 4 24 0.0V
-VSN 2 25 0.0V
-VBN 2 26 0.0V
-.ENDS INV
-
-.MODEL M_NMOS NUMOS
-+ X.MESH L=0.0 N=1
-+ X.MESH L=0.6 N=4
-+ X.MESH L=0.7 N=5
-+ X.MESH L=1.0 N=7
-+ X.MESH L=1.2 N=11
-+ X.MESH L=3.2 N=21
-+ X.MESH L=3.4 N=25
-+ X.MESH L=3.7 N=27
-+ X.MESH L=3.8 N=28
-+ X.MESH L=4.4 N=31
-+
-+ Y.MESH L=-.05 N=1
-+ Y.MESH L=0.0  N=5
-+ Y.MESH L=.05  N=9
-+ Y.MESH L=0.3  N=14
-+ Y.MESH L=2.0  N=19
-+
-+ REGION NUM=1 MATERIAL=1 Y.L=0.0
-+ MATERIAL NUM=1 SILICON
-+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
-+
-+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
-+ MATERIAL NUM=2 OXIDE
-+
-+ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
-+ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
-+ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
-+ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
-+
-+ DOPING UNIF P.TYPE CONC=2.5E16 X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
-+ DOPING UNIF P.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
-+ DOPING UNIF N.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
-+ DOPING UNIF N.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
-+
-+ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
-+ METHOD AC=DIRECT ONEC
-+ OUTPUT ^ALL.DEBUG
-
-.MODEL M_PMOS NUMOS
-+ X.MESH L=0.0 N=1
-+ X.MESH L=0.6 N=4
-+ X.MESH L=0.7 N=5
-+ X.MESH L=1.0 N=7
-+ X.MESH L=1.2 N=11
-+ X.MESH L=3.2 N=21
-+ X.MESH L=3.4 N=25
-+ X.MESH L=3.7 N=27
-+ X.MESH L=3.8 N=28
-+ X.MESH L=4.4 N=31
-+
-+ Y.MESH L=-.05 N=1
-+ Y.MESH L=0.0  N=5
-+ Y.MESH L=.05  N=9
-+ Y.MESH L=0.3  N=14
-+ Y.MESH L=2.0  N=19
-+
-+ REGION NUM=1 MATERIAL=1 Y.L=0.0
-+ MATERIAL NUM=1 SILICON
-+ MOBILITY MATERIAL=1 CONCMOD=SG FIELDMOD=SG
-+
-+ REGION NUM=2 MATERIAL=2 Y.H=0.0 X.L=0.7 X.H=3.7
-+ MATERIAL NUM=2 OXIDE
-+
-+ ELEC NUM=1 X.L=3.8 X.H=4.4	Y.L=0.0 Y.H=0.0
-+ ELEC NUM=2 X.L=0.7 X.H=3.7	IY.L=1  IY.H=1
-+ ELEC NUM=3 X.L=0.0 X.H=0.6	Y.L=0.0 Y.H=0.0
-+ ELEC NUM=4 X.L=0.0 X.H=4.4	Y.L=2.0 Y.H=2.0
-+
-+ DOPING UNIF N.TYPE CONC=1E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=2.0
-+ DOPING UNIF P.TYPE CONC=3E16   X.L=0.0 X.H=4.4  Y.L=0.0 Y.H=0.05
-+ DOPING UNIF P.TYPE CONC=1E20   X.L=0.0 X.H=1.1  Y.L=0.0 Y.H=0.2
-+ DOPING UNIF P.TYPE CONC=1E20   X.L=3.3 X.H=4.4  Y.L=0.0 Y.H=0.2
-+
-+ MODELS CONCMOB FIELDMOB BGN SRH CONCTAU
-+ METHOD AC=DIRECT ONEC
-+ OUTPUT ^ALL.DEBUG
-
-.TRAN 0.1NS 5.0NS
-.PRINT V(4)
-.OPTIONS ACCT BYPASS=1 METHOD=GEAR
-.END