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authorrahulp132020-02-28 11:38:58 +0530
committerrahulp132020-02-28 11:38:58 +0530
commit246319682f60293b132fca1ce6e24689c6682617 (patch)
tree6871b758a17869efecfd617f5513e31f9a933f4a /Windows/spice/examples/cider/bjt/pebjt.lib
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downloadeSim-246319682f60293b132fca1ce6e24689c6682617.tar.gz
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+**
+* Numerical models for a
+* polysilicon emitter complementary bipolar process.
+* The default device size is 1um by 10um (LxW)
+**
+
+.model M_NPN nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0 n=51
++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2
++ domain num=1 material=1 x.l=0.0
++ domain num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100
++ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3
++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 ac=direct itlim=15
+
+.model M_NPSUB numd level=1
++ title One-Dimensional Numerical Collector-Substrate Diode
++ options defa=10p
++ x.mesh loc=1.3 n=1
++ x.mesh loc=2.0 n=101
++ domain num=1 material=1
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
++ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 itlim=10
+
+.model M_PNP nbjt level=1
++ title One-Dimensional Numerical Bipolar
++ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p
++ x.mesh loc=-0.2 n=1
++ x.mesh loc=0.0 n=51
++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2
++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2
++ domain num=1 material=1 x.l=0.0
++ domain num=2 material=2 x.h=0.0
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ material num=2 polysilicon
++ mobility mat=2 concmod=ct fieldmod=ct
++ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047
++ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200
++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3
++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 ac=direct itlim=15
+
+.model M_PNSUB numd level=1
++ title One-Dimensional Numerical Collector-Substrate Diode
++ options defa=10p
++ x.mesh loc=1.3 n=1
++ x.mesh loc=2.0 n=101
++ domain num=1 material=1
++ material num=1 silicon
++ mobility mat=1 concmod=ct fieldmod=ct
++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100
++ doping unif n.type conc=1e15 x.l=0.0 x.h=2.0
++ models bgn srh auger conctau concmob fieldmob ^aval
++ method devtol=1e-12 itlim=10