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author | rahulp13 | 2020-02-28 11:38:58 +0530 |
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committer | rahulp13 | 2020-02-28 11:38:58 +0530 |
commit | 246319682f60293b132fca1ce6e24689c6682617 (patch) | |
tree | 6871b758a17869efecfd617f5513e31f9a933f4a /Windows/spice/examples/cider/bicmos/bicmos.lib | |
parent | d9ab84106cac311d953f344386fef1c1e2bca1cf (diff) | |
download | eSim-246319682f60293b132fca1ce6e24689c6682617.tar.gz eSim-246319682f60293b132fca1ce6e24689c6682617.tar.bz2 eSim-246319682f60293b132fca1ce6e24689c6682617.zip |
initial commit
Diffstat (limited to 'Windows/spice/examples/cider/bicmos/bicmos.lib')
-rw-r--r-- | Windows/spice/examples/cider/bicmos/bicmos.lib | 127 |
1 files changed, 127 insertions, 0 deletions
diff --git a/Windows/spice/examples/cider/bicmos/bicmos.lib b/Windows/spice/examples/cider/bicmos/bicmos.lib new file mode 100644 index 00000000..cc1eb20d --- /dev/null +++ b/Windows/spice/examples/cider/bicmos/bicmos.lib @@ -0,0 +1,127 @@ +.MODEL M_NPN nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since, we are only simulating half of a device, we double the unit width ++ * 1.0 um emitter length ++ options defw=2.0u ++ output dc.debug stat ++ ++ *x.mesh w=2.5 n=5 ++ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.094 lat.rotate ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.MODEL M_NMOS_1 numos ++ output dc.debug stat ++ title 1.0um NMOS Device ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss n.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=4.10 ++ models concmob fieldmob surfmob srh auger conctau bgn ^aval ++ method ac=direct itlim=10 onec + +.MODEL M_PMOS_1 numos ++ title 1.0um PMOS Device ++ ++ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 ++ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 ++ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 ++ ++ y.mesh l=-.0200 n=1 ++ y.mesh l=0.0 n=6 ++ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 ++ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 ++ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 ++ ++ region num=1 material=1 y.h=0.0 ++ region num=2 material=2 y.l=0.0 ++ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 ++ material num=1 oxide ++ material num=2 silicon ++ ++ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 ++ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 ++ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 ++ ++ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 ++ + char.l=0.30 ++ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 ++ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ doping gauss p.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 ++ + char.l=0.16 lat.rotate ratio=0.65 ++ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 ++ + char.l=0.03 lat.rotate ratio=0.65 ++ ++ contact num=2 workf=5.29 ++ models concmob fieldmob surfmob srh auger conctau bgn ^aval ++ method ac=direct itlim=10 onec |