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author | Rahul Paknikar | 2021-01-08 12:47:23 +0530 |
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committer | GitHub | 2021-01-08 12:47:23 +0530 |
commit | e6f48f5b1bf22a1d048b44ed4416b4315a461306 (patch) | |
tree | fd357549a236cdc652f0b6d2919beee0cee7faa5 /Windows/spice/examples/cider/bicmos/bicmos.lib | |
parent | ac223c4a69c701ad0a247401acdc48b8b6b6dba6 (diff) | |
parent | 6b512cbf954273b0f21d3800d10a7ad42a759425 (diff) | |
download | eSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.tar.gz eSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.tar.bz2 eSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.zip |
Merge pull request #161 from rahulp13/installersi2.1
fixed key issue for ubuntu 20+; updated installers for windows os
Diffstat (limited to 'Windows/spice/examples/cider/bicmos/bicmos.lib')
-rw-r--r-- | Windows/spice/examples/cider/bicmos/bicmos.lib | 127 |
1 files changed, 0 insertions, 127 deletions
diff --git a/Windows/spice/examples/cider/bicmos/bicmos.lib b/Windows/spice/examples/cider/bicmos/bicmos.lib deleted file mode 100644 index cc1eb20d..00000000 --- a/Windows/spice/examples/cider/bicmos/bicmos.lib +++ /dev/null @@ -1,127 +0,0 @@ -.MODEL M_NPN nbjt level=2 -+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR -+ * Since, we are only simulating half of a device, we double the unit width -+ * 1.0 um emitter length -+ options defw=2.0u -+ output dc.debug stat -+ -+ *x.mesh w=2.5 n=5 -+ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 -+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 -+ -+ y.mesh l=-0.2 n=1 -+ y.mesh l= 0.0 n=5 -+ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 -+ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 -+ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 -+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 -+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 -+ -+ domain num=1 material=1 x.l=2.0 y.h=0.0 -+ domain num=2 material=2 x.h=2.0 y.h=0.0 -+ domain num=3 material=3 y.l=0.0 -+ material num=1 polysilicon -+ material num=2 oxide -+ material num=3 silicon -+ -+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 -+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 -+ -+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.047 lat.rotate -+ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 -+ + char.l=0.094 lat.rotate -+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 -+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 -+ + char.l=0.100 lat.rotate -+ -+ method ac=direct itlim=10 -+ models bgn srh auger conctau concmob fieldmob - -.MODEL M_NMOS_1 numos -+ output dc.debug stat -+ title 1.0um NMOS Device -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss p.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif p.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 -+ doping gauss n.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss n.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss n.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=4.10 -+ models concmob fieldmob surfmob srh auger conctau bgn ^aval -+ method ac=direct itlim=10 onec - -.MODEL M_PMOS_1 numos -+ title 1.0um PMOS Device -+ -+ x.mesh w=0.9 h.e=0.020 h.m=0.2 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.4 h.s=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.4 h.e=0.005 h.m=0.1 r=2.0 -+ x.mesh w=0.2 h.e=0.005 h.m=0.02 r=2.0 -+ x.mesh w=0.9 h.s=0.020 h.m=0.2 r=2.0 -+ -+ y.mesh l=-.0200 n=1 -+ y.mesh l=0.0 n=6 -+ y.mesh w=0.15 h.s=0.0001 h.max=.02 r=2.0 -+ y.mesh w=0.45 h.s=0.02 h.max=0.2 r=2.0 -+ y.mesh w=1.40 h.s=0.20 h.max=0.4 r=2.0 -+ -+ region num=1 material=1 y.h=0.0 -+ region num=2 material=2 y.l=0.0 -+ interface dom=2 nei=1 x.l=1.0 x.h=2.0 layer.width=0.0 -+ material num=1 oxide -+ material num=2 silicon -+ -+ elec num=1 x.l=2.5 x.h=3.1 y.l=0.0 y.h=0.0 -+ elec num=2 x.l=1.0 x.h=2.0 iy.l=1 iy.h=1 -+ elec num=3 x.l=-0.1 x.h=0.5 y.l=0.0 y.h=0.0 -+ elec num=4 x.l=-0.1 x.h=3.1 y.l=2.0 y.h=2.0 -+ -+ doping gauss n.type conc=1.0e17 x.l=-0.1 x.h=3.1 y.l=0.0 -+ + char.l=0.30 -+ doping unif n.type conc=5.0e15 x.l=-0.1 x.h=3.1 y.l=0.0 y.h=2.1 -+ doping gauss p.type conc=4e17 x.l=-0.1 x.h=1.0 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=-0.1 x.h=0.95 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ doping gauss p.type conc=4e17 x.l=2.0 x.h=3.1 y.l=0.0 y.h=0.0 -+ + char.l=0.16 lat.rotate ratio=0.65 -+ doping gauss p.type conc=1e20 x.l=2.05 x.h=3.1 y.l=0.0 y.h=0.08 -+ + char.l=0.03 lat.rotate ratio=0.65 -+ -+ contact num=2 workf=5.29 -+ models concmob fieldmob surfmob srh auger conctau bgn ^aval -+ method ac=direct itlim=10 onec |