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authorRahul Paknikar2021-01-08 12:47:23 +0530
committerGitHub2021-01-08 12:47:23 +0530
commite6f48f5b1bf22a1d048b44ed4416b4315a461306 (patch)
treefd357549a236cdc652f0b6d2919beee0cee7faa5 /Windows/spice/docs/README.vdmos
parentac223c4a69c701ad0a247401acdc48b8b6b6dba6 (diff)
parent6b512cbf954273b0f21d3800d10a7ad42a759425 (diff)
downloadeSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.tar.gz
eSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.tar.bz2
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Merge pull request #161 from rahulp13/installersi2.1
fixed key issue for ubuntu 20+; updated installers for windows os
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-README for VDMOS model in NGSPICE
-==================
-
-A simmple MOS model for vertical power transistors (VDMOS model) is under
-development. Originally it has been available in LTSPICE
-(see http://ltwiki.org/LTspiceHelp/LTspiceHelp/M_MOSFET.htm) or
-SuperSpice (https://www.anasoft.co.uk/MOS1Model.htm).
-
-It is based on the MOS1 model. The Meyer capacitance has been
-replaced by a special cap model. A body diode with series
-resistance is parallel to the D/S device nodes. It defines the
-reverse behavior, but also the breakdown of the transistor.
-
-Basic current equations for ac, dc and tran operations are
-available as well as the capacitance model.
-
-Subthreshold behavior (parameter ksubthres) is available,
-and is compatible with LTSPICE. An alternative weak inversion
-model may be seected by choosing the subslope parameter instead
-of ksubthres.
-
-A quasi saturation model enhancement is available.
-
-The model parameters supported are:
-
-/* basic device */
-"vto", ,"Threshold voltage"
-"kp", "Transconductance parameter"
-"phi", "Surface potential"
-"lambda","Channel length modulation"
-"rd", "Drain ohmic resistance"
-"rs", "Source ohmic resistance"
-"rg", "Gate ohmic resistance"
-
-"tnom", "Parameter measurement temperature"
-"kf", "Flicker noise coefficient"
-"af", "Flicker noise exponent"
-
-/* quasi saturation */
-"rq", "Quasi saturation resistance fitting parameter"
-"vq", "Quasi saturation voltage fitting parameter"
-
-"mtriode", "Conductance multiplier in triode region"
-
-/* weak inversion */
-"subslope", "Slope of weak inversion log current versus vgs - vth "
-"subshift", "Shift of weak inversion plot on the vgs axis "
-"ksubthres", "Slope n from (vgs-vth)/n, LTSPICE and SuperSpice standard"
-
-/* body diode */
-"bv", "Vds breakdown voltage"
-"ibv", "Current at Vds=bv"
-"nbv", "Vds breakdown emission coefficient"
-"rds", "Drain-source shunt resistance"
-"rb", "Body diode ohmic resistance"
-"n", "Bulk diode emission coefficient"
-"tt", "Body diode transit time"
-"eg", "Body diode activation energy for temperature effect on Is"
-"Xti", "Body diode saturation current temperature exponent"
-"is", "Body diode saturation current"
-"vj", "Body diode junction potential"
-
-/* body diode capacitance (e.g. source-drain capacitance */
-"fc", "Body diode coefficient for forward-bias depletion capacitance formula"
-"cjo", "Zero-bias body diode junction capacitance"
-"m", "Body diode grading coefficient"
-
-/* gate-source and gate-drain capacitances */
-"cgdmin", "Minimum non-linear G-D capacitance"
-"cgdmax", "Maximum non-linear G-D capacitance"
-"a", "Non-linear Cgd capacitance parameter"
-"cgs", "Gate-source capacitance"