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author | rahulp13 | 2020-03-03 05:31:58 +0530 |
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committer | rahulp13 | 2020-03-03 05:31:58 +0530 |
commit | dfc268e0863c913a1b8726cd54eea3b40caf7c67 (patch) | |
tree | 1cd82634684da5ae86b558d44756189e080545d4 /Windows/spice/docs/README.vdmos | |
parent | fd62c52150c7d1f81da8060b2f5db6b94d174ccf (diff) | |
download | eSim-dfc268e0863c913a1b8726cd54eea3b40caf7c67.tar.gz eSim-dfc268e0863c913a1b8726cd54eea3b40caf7c67.tar.bz2 eSim-dfc268e0863c913a1b8726cd54eea3b40caf7c67.zip |
upgrade ngspice to v31
Diffstat (limited to 'Windows/spice/docs/README.vdmos')
-rw-r--r-- | Windows/spice/docs/README.vdmos | 72 |
1 files changed, 72 insertions, 0 deletions
diff --git a/Windows/spice/docs/README.vdmos b/Windows/spice/docs/README.vdmos new file mode 100644 index 00000000..12aff931 --- /dev/null +++ b/Windows/spice/docs/README.vdmos @@ -0,0 +1,72 @@ +README for VDMOS model in NGSPICE +================== + +A simmple MOS model for vertical power transistors (VDMOS model) is under +development. Originally it has been available in LTSPICE +(see http://ltwiki.org/LTspiceHelp/LTspiceHelp/M_MOSFET.htm) or +SuperSpice (https://www.anasoft.co.uk/MOS1Model.htm). + +It is based on the MOS1 model. The Meyer capacitance has been +replaced by a special cap model. A body diode with series +resistance is parallel to the D/S device nodes. It defines the +reverse behavior, but also the breakdown of the transistor. + +Basic current equations for ac, dc and tran operations are +available as well as the capacitance model. + +Subthreshold behavior (parameter ksubthres) is available, +and is compatible with LTSPICE. An alternative weak inversion +model may be seected by choosing the subslope parameter instead +of ksubthres. + +A quasi saturation model enhancement is available. + +The model parameters supported are: + +/* basic device */ +"vto", ,"Threshold voltage" +"kp", "Transconductance parameter" +"phi", "Surface potential" +"lambda","Channel length modulation" +"rd", "Drain ohmic resistance" +"rs", "Source ohmic resistance" +"rg", "Gate ohmic resistance" + +"tnom", "Parameter measurement temperature" +"kf", "Flicker noise coefficient" +"af", "Flicker noise exponent" + +/* quasi saturation */ +"rq", "Quasi saturation resistance fitting parameter" +"vq", "Quasi saturation voltage fitting parameter" + +"mtriode", "Conductance multiplier in triode region" + +/* weak inversion */ +"subslope", "Slope of weak inversion log current versus vgs - vth " +"subshift", "Shift of weak inversion plot on the vgs axis " +"ksubthres", "Slope n from (vgs-vth)/n, LTSPICE and SuperSpice standard" + +/* body diode */ +"bv", "Vds breakdown voltage" +"ibv", "Current at Vds=bv" +"nbv", "Vds breakdown emission coefficient" +"rds", "Drain-source shunt resistance" +"rb", "Body diode ohmic resistance" +"n", "Bulk diode emission coefficient" +"tt", "Body diode transit time" +"eg", "Body diode activation energy for temperature effect on Is" +"Xti", "Body diode saturation current temperature exponent" +"is", "Body diode saturation current" +"vj", "Body diode junction potential" + +/* body diode capacitance (e.g. source-drain capacitance */ +"fc", "Body diode coefficient for forward-bias depletion capacitance formula" +"cjo", "Zero-bias body diode junction capacitance" +"m", "Body diode grading coefficient" + +/* gate-source and gate-drain capacitances */ +"cgdmin", "Minimum non-linear G-D capacitance" +"cgdmax", "Maximum non-linear G-D capacitance" +"a", "Non-linear Cgd capacitance parameter" +"cgs", "Gate-source capacitance" |