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authorrahulp132020-03-03 05:31:58 +0530
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+README for VDMOS model in NGSPICE
+==================
+
+A simmple MOS model for vertical power transistors (VDMOS model) is under
+development. Originally it has been available in LTSPICE
+(see http://ltwiki.org/LTspiceHelp/LTspiceHelp/M_MOSFET.htm) or
+SuperSpice (https://www.anasoft.co.uk/MOS1Model.htm).
+
+It is based on the MOS1 model. The Meyer capacitance has been
+replaced by a special cap model. A body diode with series
+resistance is parallel to the D/S device nodes. It defines the
+reverse behavior, but also the breakdown of the transistor.
+
+Basic current equations for ac, dc and tran operations are
+available as well as the capacitance model.
+
+Subthreshold behavior (parameter ksubthres) is available,
+and is compatible with LTSPICE. An alternative weak inversion
+model may be seected by choosing the subslope parameter instead
+of ksubthres.
+
+A quasi saturation model enhancement is available.
+
+The model parameters supported are:
+
+/* basic device */
+"vto", ,"Threshold voltage"
+"kp", "Transconductance parameter"
+"phi", "Surface potential"
+"lambda","Channel length modulation"
+"rd", "Drain ohmic resistance"
+"rs", "Source ohmic resistance"
+"rg", "Gate ohmic resistance"
+
+"tnom", "Parameter measurement temperature"
+"kf", "Flicker noise coefficient"
+"af", "Flicker noise exponent"
+
+/* quasi saturation */
+"rq", "Quasi saturation resistance fitting parameter"
+"vq", "Quasi saturation voltage fitting parameter"
+
+"mtriode", "Conductance multiplier in triode region"
+
+/* weak inversion */
+"subslope", "Slope of weak inversion log current versus vgs - vth "
+"subshift", "Shift of weak inversion plot on the vgs axis "
+"ksubthres", "Slope n from (vgs-vth)/n, LTSPICE and SuperSpice standard"
+
+/* body diode */
+"bv", "Vds breakdown voltage"
+"ibv", "Current at Vds=bv"
+"nbv", "Vds breakdown emission coefficient"
+"rds", "Drain-source shunt resistance"
+"rb", "Body diode ohmic resistance"
+"n", "Bulk diode emission coefficient"
+"tt", "Body diode transit time"
+"eg", "Body diode activation energy for temperature effect on Is"
+"Xti", "Body diode saturation current temperature exponent"
+"is", "Body diode saturation current"
+"vj", "Body diode junction potential"
+
+/* body diode capacitance (e.g. source-drain capacitance */
+"fc", "Body diode coefficient for forward-bias depletion capacitance formula"
+"cjo", "Zero-bias body diode junction capacitance"
+"m", "Body diode grading coefficient"
+
+/* gate-source and gate-drain capacitances */
+"cgdmin", "Minimum non-linear G-D capacitance"
+"cgdmax", "Maximum non-linear G-D capacitance"
+"a", "Non-linear Cgd capacitance parameter"
+"cgs", "Gate-source capacitance"