From 476705d693c7122d34f9b049fa79b935405c9b49 Mon Sep 17 00:00:00 2001 From: prashantsinalkar Date: Tue, 14 Apr 2020 10:19:27 +0530 Subject: Initial commit --- .../8-Special_Semiconductor_Devices.ipynb | 471 +++++++++++++++++++++ 1 file changed, 471 insertions(+) create mode 100644 Basic_Electronics_by_D_De/8-Special_Semiconductor_Devices.ipynb (limited to 'Basic_Electronics_by_D_De/8-Special_Semiconductor_Devices.ipynb') diff --git a/Basic_Electronics_by_D_De/8-Special_Semiconductor_Devices.ipynb b/Basic_Electronics_by_D_De/8-Special_Semiconductor_Devices.ipynb new file mode 100644 index 0000000..a925f49 --- /dev/null +++ b/Basic_Electronics_by_D_De/8-Special_Semiconductor_Devices.ipynb @@ -0,0 +1,471 @@ +{ +"cells": [ + { + "cell_type": "markdown", + "metadata": {}, + "source": [ + "# Chapter 8: Special Semiconductor Devices" + ] + }, +{ + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Example 8.10: Design_of_Triggering_Circuit_for_a_UJT.sce" + ] + }, + { +"cell_type": "code", + "execution_count": null, + "metadata": { + "collapsed": true + }, + "outputs": [], +"source": [ +"// Design of Triggering Circuit for a UJT\n", +"// Basic Electronics\n", +"// By Debashis De\n", +"// First Edition, 2010\n", +"// Dorling Kindersley Pvt. Ltd. India\n", +"// Example 8-10 in page 390\n", +"\n", +"clear; clc; close;\n", +"\n", +"// Given Data\n", +"Vs=30; // DC source voltage in V\n", +"eta=0.51; // Intrinsic stand off ratio\n", +"Ip=10*10^-6; // Peak Emitter current of UJT in mu-A\n", +"Vv=3.5; // Valley voltage in V\n", +"Iv=10*10^-3; // Valley current in A\n", +"f=60; // Source frequency in Hz\n", +"tg=50*10^-6; // width of triggering pulse in seconds\n", +"C=0.5*10^-6; // Assumption for circuit Capacitance in mu-F\n", +"Vd=0.5; // Fixed value of Vb in V\n", +"\n", +"// Calculations\n", +"Vp=(eta*Vs)+Vd;\n", +"Rlow=(Vs-Vp)/Ip; \n", +"Rup=(Vs-Vv)/Iv;\n", +"tou=1/f;\n", +"R=(tou/C)*(1/log(1/(1-eta))); \n", +"Rb1=tg/C; \n", +"Rb2=10^4/(eta*Vs); \n", +"\n", +"printf('(a)The value of Base-1 Resistance of UJT is %0.2f ohm \n',Rb1);\n", +"printf('(b)The value of Base-2 Resistance of UJT is %0.2f ohm \n',Rb2);\n", +"printf('(c)Circuit resistance of the arrangement is %0.2e ohm \n',R);\n", +"\n", +"// Results\n", +"// (a) The value of Base-1 Resistance of UJT is 100 ohm\n", +"// (b) The value of Base-2 Resistance of UJT is 654 ohm\n", +"// (c) Circuit resistance of the arrangement is 46.7 K-ohm" + ] + } +, +{ + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Example 8.11: To_determine_Emitter_source_voltage_of_UJT.sce" + ] + }, + { +"cell_type": "code", + "execution_count": null, + "metadata": { + "collapsed": true + }, + "outputs": [], +"source": [ +"// To determine Emitter source voltage of UJT\n", +"// Basic Electronics\n", +"// By Debashis De\n", +"// First Edition, 2010\n", +"// Dorling Kindersley Pvt. Ltd. India\n", +"// Example 8-11 in page 391\n", +"\n", +"clear; clc; close;\n", +"\n", +"// Given Data\n", +"Re=1*10^3; // Emitter Resistance of UJT in ohm\n", +"Iv=5*10^-3; // Valley current of UJT in A\n", +"Vv=2; // Valley voltage of UJT in V\n", +"\n", +"// Calculations\n", +"Ve=Vv;\n", +"Ie=Iv; \n", +"Vee=(Ie*Re)+Ve;\n", +"\n", +"printf('The value of Emitter source voltage of UJT for turn-off is %0.2f V',Vee);\n", +"\n", +"// Results\n", +"// The value of Emitter source voltage of UJT for turn-off is 7 V" + ] + } +, +{ + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Example 8.1: Calculate_the_Gate_Source_Resistance.sce" + ] + }, + { +"cell_type": "code", + "execution_count": null, + "metadata": { + "collapsed": true + }, + "outputs": [], +"source": [ +"// Calculate the Gate Source Resistance\n", +"// Basic Electronics\n", +"// By Debashis De\n", +"// First Edition, 2010\n", +"// Dorling Kindersley Pvt. Ltd. India\n", +"// Example 8-1 in page 376\n", +"\n", +"clear; clc; close;\n", +"\n", +"// Given Data\n", +"P=0.5; // Value of Allowable Gate Power Dissipation in watt\n", +"Es=14; // Trigger Source Voltage in V\n", +"slope=130; // Slope of Gate-Cathode Characteristic line\n", +"\n", +"// Calculations\n", +"Ig=sqrt(P/slope); \n", +"Vg=slope*Ig;\n", +"Rs=(Es-Vg)/Ig; \n", +"\n", +"printf('(a)The value of Gate Resistance for the Circuit is %0.2e ohm \n',Rs);\n", +"printf('(b)The value of the Gate Voltage is %0.2e V \n',Vg);\n", +"printf('(c)The value of the Gate Current is %0.2e A \n',Ig);\n", +"\n", +"// Results\n", +"// (a) The value of Gate Resistance for the Circuit is 95.3 ohm\n", +"// (b) The value of the Gate Voltage is 8.06 V\n", +"// (c) The value of the Gate Current is 62 mA" + ] + } +, +{ + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Example 8.2: Firing_angle_of_Thyristor.sce" + ] + }, + { +"cell_type": "code", + "execution_count": null, + "metadata": { + "collapsed": true + }, + "outputs": [], +"source": [ +"// Firing angle of Thyristor\n", +"// Basic Electronics\n", +"// By Debashis De\n", +"// First Edition, 2010\n", +"// Dorling Kindersley Pvt. Ltd. India\n", +"// Example 8-2 in page 377\n", +"\n", +"clear; clc; close;\n", +"\n", +"// Given Data\n", +"Il=50^10*-3; // Latching current of the Thyristor in mA\n", +"t=50^10*-6; // Duration of firing pulse in second\n", +"Es=50; // DC voltage of the circuit in V\n", +"R=10; // Resistance of the circuit in ohm\n", +"L=0.25; // Inductance of the circuit in H\n", +"e=2.718282; // Constant of calculation\n", +"\n", +"// Calculations\n", +"tou=0.025; \n", +"i=(Es/R)*(1-exp((-(50*10^-6))/tou));\n", +"printf('(a) i = %0.3e A\n',i); \n", +"\n", +"if(i