// Example 4.2: Design of given circuit to obtain I_D=0.4mA and V_D=0.5V // NMOS transistor is operating in saturation region I_D=0.4*10^-3; // (A) V_D=0.5; // (V) V_t=0.7; // (V) uC_n=100*10^-6; // (A/V^2) L=1*10^-6; // (m) W=32*10^-6; // (m) V_SS=-2.5; // (V) V_DD=2.5; // (V) V_OV=sqrt(I_D*2*L/(uC_n*W)); V_GS=V_t+V_OV; disp(V_GS,"V_t (V)") V_S=-1.2; // (V) R_S=(V_S-V_SS)/I_D; disp(R_S,"R_S (ohm)") V_D=0.5; // (V) R_D=(V_DD-V_D)/I_D; disp(R_D,"R_D (ohm)")