kT = 26*10^-3; //in eV
q = 1.6*10^-19;
ni = 1.5*10^10;
eps0 = 8.85*10^-14; //in F/m
eps = 11.9*eps0;
eps1 = 3.9*eps0;
Na = 2*10^16;
dox = 500*10^-8;
Vsb = 1;
phiF = kT*log(Na/ni);
disp(phiF,"The Fermi level position (in V) for the device = ")
Cox = eps1/dox;
disp(Cox,"The oxide capacitance (in F/cm2) = ")
dVt = (2*q*eps*Na)^0.5/Cox*((2*phiF+1)^0.5 - (2*phiF)^0.5);
disp(dVt,"The change in the threshold voltage (in V) = ")