// Scilab Code Ex6.12: Page-203 (2006) clc; clear; k = 1.38e-023; // Boltzmann constant, J/mol/K e = 1.6e-019; // Energy equivalent of 1 eV, J/eV T = 300; // Room temperature of the material, K K_Si = 11.7; // Dielectric constant of Si K_Ge = 15.8; // Dielectric constant of Ge m = 9.1e-031; // Mass of an electron, kg m_eff = 0.2; // Effective masses of the electron in both Si and Ge, kg E_ion_Si = 13.6*m_eff/K_Si^2; // Donor ionization energy of Si, eV E_ion_Ge = 13.6*m_eff/K_Ge^2; // Donor ionization energy of Ge, eV E = k*T/e; // Energy available for electrons at 300 K, eV printf("\nThe donor ionization energy of Si = %6.4f eV", E_ion_Si); printf("\nThe donor ionization energy of Ge = %6.4f eV", E_ion_Ge); printf("\nThe energy available for electrons at 300 K = %5.3f eV", E); // Result // The donor ionization energy of Si = 0.0199 eV // The donor ionization energy of Ge = 0.0109 eV // The energy available for electrons at 300 K = 0.026 eV