From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001
From: priyanka
Date: Wed, 24 Jun 2015 15:03:17 +0530
Subject: initial commit / add all books

---
 339/CH6/EX6.9/ex6_9.sce | 40 ++++++++++++++++++++++++++++++++++++++++
 1 file changed, 40 insertions(+)
 create mode 100755 339/CH6/EX6.9/ex6_9.sce

(limited to '339/CH6/EX6.9/ex6_9.sce')

diff --git a/339/CH6/EX6.9/ex6_9.sce b/339/CH6/EX6.9/ex6_9.sce
new file mode 100755
index 000000000..91a34b8fe
--- /dev/null
+++ b/339/CH6/EX6.9/ex6_9.sce
@@ -0,0 +1,40 @@
+//define problem parameters
+Nd=1e16*1e6;
+d=0.75e-6;
+W=10e-6;
+L=2e-6;
+eps_r=12;
+Vd=0.8;
+mu_n=8500e-4;
+Vgs=0:-0.01:-4;
+
+//define physical constants
+q=1.60218e-19;// electron charge
+eps0=8.85e-12;// permittivity of free space
+
+eps=eps_r*eps0;
+
+//pinch-off voltage
+Vp=q*Nd*d^2/(2*eps)
+
+//threshold voltage
+Vt0=Vd-Vp
+
+//conductivity of the channel
+sigma=q*mu_n*Nd
+
+//Channel conductance
+G0=q*sigma*Nd*W*d/L
+
+//saturation current using the exact formula
+Id_sat=G0*(Vp/3-(Vd-Vgs)+2/(3*sqrt(Vp))*(Vd-Vgs).^(3/2)).*(1-(Vgs<Vt0));
+Idss=Id_sat(1)
+
+//saturation current using the quadratic law approximation
+Id_sat_square=Idss*(1-Vgs/Vt0)^2;
+
+plot(Vgs,Id_sat,Vgs,Id_sat_square);
+legend('exact formula', 'quadratic approximation',2);
+title('FET saturation current as a function of the gate-source voltage');
+xlabel('Gate-source voltage V_{GS}, V');
+ylabel('Drain saturation current I_{DSat}, A');
-- 
cgit