From f35ea80659b6a49d1bb2ce1d7d002583f3f40947 Mon Sep 17 00:00:00 2001
From: prashantsinalkar
Date: Tue, 10 Oct 2017 12:38:01 +0530
Subject: updated the code

---
 284/CH10/EX10.10/ex_10.sce | 27 ++++++++++++++-------------
 284/CH10/EX10.6/ex_6.sce   | 35 ++++++++++++++++++-----------------
 284/CH10/EX10.7/ex_7.sce   | 34 +++++++++++++++++-----------------
 284/CH11/EX11.1/ex1.sce    | 24 +++++++++++++-----------
 284/CH11/EX11.3/ex3.sce    | 21 +++++++++++----------
 284/CH11/EX11.4/ex4.sce    | 30 ++++++++++++++++--------------
 284/CH11/EX11.5/ex_5.sce   | 40 ++++++++++++++++++++--------------------
 284/CH12/EX12.8/ex8.sce    | 38 +++++++++++++++++++-------------------
 284/CH13/EX13.4/ex4.sce    | 12 ++++++------
 284/CH13/EX13.7/ex7.sce    | 21 +++++++++++----------
 284/CH3/EX3.13/ex_13.sce   | 21 ++++++++++++---------
 284/CH6/EX6.3/ex_3.sce     | 24 +++++++++++++-----------
 284/CH6/EX6.5/ex_5.sce     | 28 +++++++++++++++-------------
 284/CH7/EX7.2/ex_2.sce     | 27 ++++++++++++++-------------
 284/CH8/EX8.1/ex_1.sce     | 26 ++++++++++++++------------
 284/CH8/EX8.5/ex_5.sce     | 45 +++++++++++++++++++++++----------------------
 16 files changed, 236 insertions(+), 217 deletions(-)

(limited to '284')

diff --git a/284/CH10/EX10.10/ex_10.sce b/284/CH10/EX10.10/ex_10.sce
index 3d45afa3e..87bc3ca89 100755
--- a/284/CH10/EX10.10/ex_10.sce
+++ b/284/CH10/EX10.10/ex_10.sce
@@ -1,13 +1,14 @@
-// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
-//Caption_Substrate bias effects
-//Ex_10//page 478
-T=300
-Na=3*10^16
-tox=500*10^-8
-VSB=1
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_fp=0.0259*log(Na/ni)
-eps_ox=3.9*8.85*10^-14
-Cox=eps_ox/tox
-delVT=(2*e*eps*Na)^0.5*((2*phi_fp+VSB)^0.5-(2*phi_fp)^0.5)/Cox
-printf('The change in threshold voltage is %1.2fV',delVT)
+// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
+//Caption_Substrate bias effects
+//Ex_10//page 478
+e = 1.6*10^-19;
+T=300
+Na=3*10^16
+tox=500*10^-8
+VSB=1
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_fp=0.0259*log(Na/ni)
+eps_ox=3.9*8.85*10^-14
+Cox=eps_ox/tox
+delVT=(2*e*eps_ox*Na)^0.5*((2*phi_fp+VSB)^0.5-(2*phi_fp)^0.5)/Cox
+printf('The change in threshold voltage is %1.2fV',delVT)
\ No newline at end of file
diff --git a/284/CH10/EX10.6/ex_6.sce b/284/CH10/EX10.6/ex_6.sce
index 0bd83a43b..457a28921 100755
--- a/284/CH10/EX10.6/ex_6.sce
+++ b/284/CH10/EX10.6/ex_6.sce
@@ -1,17 +1,18 @@
-// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
-//Caption_Threshold voltage voltage
-//Ex_6//page 448
-tox=650*10^-8
-eps=11.7*8.85*10^-14
-eps_ox=3.9*8.85*10^-14
-Qss=10^10
-Vtp=-1
-Nd=2.5*10^14
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_tn=0.0259*log(Nd/ni)
-xdt=(4*eps*phi_tn/(e*Nd))^0.5
-QSD_MAX=e*Nd*xdt;
-phi_ms=-0.35
-Vtp2=(-QSD_MAX-Qss*e)*(tox/eps_ox)+phi_ms-2*phi_tn
-q=abs(Vtp2)==Vtp
-printf('Since Vtp2=Vtp, it is essentially equal to the desired result')
+// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
+//Caption_Threshold voltage voltage
+//Ex_6//page 448
+e = 1.6*10^-19;
+tox=650*10^-8
+eps=11.7*8.85*10^-14
+eps_ox=3.9*8.85*10^-14
+Qss=10^10
+Vtp=-1
+Nd=2.5*10^14
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_tn=0.0259*log(Nd/ni)
+xdt=(4*eps*phi_tn/(e*Nd))^0.5
+QSD_MAX=e*Nd*xdt;
+phi_ms=-0.35
+Vtp2=(-QSD_MAX-Qss*e)*(tox/eps_ox)+phi_ms-2*phi_tn
+q=abs(Vtp2)==Vtp
+printf('Since Vtp2=Vtp, it is essentially equal to the desired result')
\ No newline at end of file
diff --git a/284/CH10/EX10.7/ex_7.sce b/284/CH10/EX10.7/ex_7.sce
index 9fa60069d..61b870c43 100755
--- a/284/CH10/EX10.7/ex_7.sce
+++ b/284/CH10/EX10.7/ex_7.sce
@@ -1,17 +1,17 @@
-// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
-//Caption_Capacitance Voltage characteristics
-//Ex_7//page 455
-Na=10^16
-tox=550*10^-8     //oxide thickness
-eps=11.7*8.85*10^-14
-eps_ox=3.9*8.85*10^-14
-Cox=eps_ox/tox*10^9
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_fp=0.0259*log(Na/ni)
-xdt=(4*eps*phi_fp/(e*Na))^0.5
-Cmin=eps_ox/(tox+(eps_ox/eps)*xdt)*10^9
-r=Cmin/Cox
-CFB=eps_ox/(tox+(eps_ox/eps)*(0.0259*eps/(e*Na))^0.5) *10^9   //flat band capacitance
-r2=CFB/Cox
-printf('The value of oxide capacitance, minimum capacitance and flat band capacitance are %1.2f nF, %1.2f nF and %1.2f nF respectively',Cox,Cmin,CFB)
- 
\ No newline at end of file
+// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
+//Caption_Capacitance Voltage characteristics
+//Ex_7//page 455
+e = 1.6*10^-19;
+Na=10^16
+tox=550*10^-8     //oxide thickness
+eps=11.7*8.85*10^-14
+eps_ox=3.9*8.85*10^-14
+Cox=eps_ox/tox*10^9
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_fp=0.0259*log(Na/ni)
+xdt=(4*eps*phi_fp/(e*Na))^0.5
+Cmin=eps_ox/(tox+(eps_ox/eps)*xdt)*10^9
+r=Cmin/Cox
+CFB=eps_ox/(tox+(eps_ox/eps)*(0.0259*eps/(e*Na))^0.5) *10^9   //flat band capacitance
+r2=CFB/Cox
+printf('The value of oxide capacitance, minimum capacitance and flat band capacitance are %1.2f nF, %1.2f nF and %1.2f nF respectively',Cox,Cmin,CFB)
\ No newline at end of file
diff --git a/284/CH11/EX11.1/ex1.sce b/284/CH11/EX11.1/ex1.sce
index 0e5556add..53a65c8e2 100755
--- a/284/CH11/EX11.1/ex1.sce
+++ b/284/CH11/EX11.1/ex1.sce
@@ -1,11 +1,13 @@
-// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
-//Caption_Mobility variation
-//Ex_1//page 509
-T=300
-Na=3*10^16
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_fp=0.0259*log(Na/ni)
-xdt=(4*eps*phi_fp/(e*Na))^0.5
-QSD_MAX=e*Na*xdt;
-Eeff=1/eps*QSD_MAX
-printf('Effective electric field at threshold is %1.2f V/cm',Eeff)
+// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
+//Caption_Mobility variation
+//Ex_1//page 509
+eps=11.7*8.85*10^-14
+e=1.6*10^-19
+T=300
+Na=3*10^16
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_fp=0.0259*log(Na/ni)
+xdt=(4*eps*phi_fp/(e*Na))^0.5
+QSD_MAX=e*Na*xdt;
+Eeff=1/eps*QSD_MAX
+printf('Effective electric field at threshold is %1.2f V/cm',Eeff)
\ No newline at end of file
diff --git a/284/CH11/EX11.3/ex3.sce b/284/CH11/EX11.3/ex3.sce
index ab26815fa..779808339 100755
--- a/284/CH11/EX11.3/ex3.sce
+++ b/284/CH11/EX11.3/ex3.sce
@@ -1,11 +1,12 @@
-// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
-//Caption_Narrow channel effects
-//Ex_3//page 520
-Na=3*10^16
-tox=450*10^-8    //oxide thickness
-fi=%pi/2     //fitting parameter
-delVt=0.2
-Cox=7.67*10^-8    //oxide capacitance
-xdt=0.18*10^-4    
-W=10^4*e*Na*(fi*xdt^2)/(Cox*delVt)
+// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
+//Caption_Narrow channel effects
+//Ex_3//page 520
+e = 1.6*10^-19;
+Na=3*10^16
+tox=450*10^-8    //oxide thickness
+fi=%pi/2     //fitting parameter
+delVt=0.2
+Cox=7.67*10^-8    //oxide capacitance
+xdt=0.18*10^-4    
+W=10^4*e*Na*(fi*xdt^2)/(Cox*delVt)
 printf('The channel width that will limit the threshold voltage is %1.2f micrometer',W)
\ No newline at end of file
diff --git a/284/CH11/EX11.4/ex4.sce b/284/CH11/EX11.4/ex4.sce
index 475ba4b7d..28d62f6a6 100755
--- a/284/CH11/EX11.4/ex4.sce
+++ b/284/CH11/EX11.4/ex4.sce
@@ -1,14 +1,16 @@
-// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
-//Caption_Breakdown voltage
-//Ex_4//page 527
-Nd=10^19    //donor concentration
-Na=10^16    //acceptor concentration
-L=1.2*10^-4     //channel length
-ni=1.5*10^10     //intrinsic carrier concentration
-Vbi=0.0259*log(Na*Nd/ni^2)
-xdo=(2*eps*Vbi/(e*Na))^0.5   //zero biased source-substrate pn junction width
-//xd=(2*eps*(VbiVDS)/(e*Na))^0.5   //reverse biased drain substrate pn junction width
-xd=L-xdo   //at punch through
-VbiVDS=xd^2*e*Na/(2*eps)    //Vbi+VDS
-VDS=VbiVDS-Vbi
-printf('The punch through voltage is %1.1f V',VDS)
+// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
+//Caption_Breakdown voltage
+//Ex_4//page 527
+eps=11.7*8.85*10^-14
+e=1.6*10^-19;
+Nd=10^19    //donor concentration
+Na=10^16    //acceptor concentration
+L=1.2*10^-4     //channel length
+ni=1.5*10^10     //intrinsic carrier concentration
+Vbi=0.0259*log(Na*Nd/ni^2)
+xdo=(2*eps*Vbi/(e*Na))^0.5   //zero biased source-substrate pn junction width
+//xd=(2*eps*(VbiVDS)/(e*Na))^0.5   //reverse biased drain substrate pn junction width
+xd=L-xdo   //at punch through
+VbiVDS=xd^2*e*Na/(2*eps)    //Vbi+VDS
+VDS=VbiVDS-Vbi
+printf('The punch through voltage is %1.1f V',VDS)
\ No newline at end of file
diff --git a/284/CH11/EX11.5/ex_5.sce b/284/CH11/EX11.5/ex_5.sce
index 4405168c9..0f0dd3f7b 100755
--- a/284/CH11/EX11.5/ex_5.sce
+++ b/284/CH11/EX11.5/ex_5.sce
@@ -1,20 +1,20 @@
-// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
-//Caption_Lightly doped drain transistor
-//Ex_5//page 531
-tox=500*10^-8
-VFBO=-1.25     //initial flat band voltage
-e=1.6*10^-19
-eps_ox=3.9*8.85*10^-14
-ni=1.5*10^10     //intrinsic carrier concentration
-VT=0.70
-Na=5*10^15
-phi_fpo=0.0259*log(Na/ni)
-xdto=(4*eps*phi_fpo/(e*Na))^0.5
-Cox=eps_ox/tox
-VTO=VFBO+2*phi_fpo+(e*Na*xdto)/Cox
-x=VT-VTO
-Dt=Cox*x/e    //implant dose
-xt=0.15*10^-4    //depth to which uniform implant extends
-Nsa=Dt/xt
-Ns=Nsa+Na
-printf('The required implant dose to achieve the desired threshold voltage is %1.2f per cm^2',Dt)
+// Chapter 11_ Metal-Oxide-Semiconductor Field Effect Transistor:Additional Concepts
+//Caption_Lightly doped drain transistor
+//Ex_5//page 531
+tox=500*10^-8
+VFBO=-1.25     //initial flat band voltage
+e=1.6*10^-19
+eps_ox=3.9*8.85*10^-14
+ni=1.5*10^10     //intrinsic carrier concentration
+VT=0.70
+Na=5*10^15
+phi_fpo=0.0259*log(Na/ni)
+xdto=(4*eps_ox*phi_fpo/(e*Na))^0.5
+Cox=eps_ox/tox
+VTO=VFBO+2*phi_fpo+(e*Na*xdto)/Cox
+x=VT-VTO
+Dt=Cox*x/e    //implant dose
+xt=0.15*10^-4    //depth to which uniform implant extends
+Nsa=Dt/xt
+Ns=Nsa+Na
+printf('The required implant dose to achieve the desired threshold voltage is %1.2f per cm^2',Dt)
\ No newline at end of file
diff --git a/284/CH12/EX12.8/ex8.sce b/284/CH12/EX12.8/ex8.sce
index c313f06da..7885266d1 100755
--- a/284/CH12/EX12.8/ex8.sce
+++ b/284/CH12/EX12.8/ex8.sce
@@ -1,19 +1,19 @@
-// Chapter 12_The junction field effect transistor
-//Caption_The MESFET-Channel length modulation
-//Ex_8//page 573
-Nd=3*10^15
-eps=8.85*10^-14*11.7
-L=10
-ID1=4
-VDSsat=0  //assume
-VDS1=VDSsat+2
-VDS2=VDSsat+2.5
-
-delL2=10^4*(2*eps*(VDS2-VDSsat)/(e*Nd))^0.5   //change in length
-delL1=10^4*(2*eps*(VDS1-VDSsat)/(e*Nd))^0.5   //change in length
-//drain currents are
-ID22=ID1*(L/(L-0.5*delL2))
-ID11=ID1*(L/(L-0.5*delL1))
-rds=(VDS2-VDS1)/(ID22-ID11)
-printf('The small signal output resistance at the drain terminal due to channel length modulation effects is %1.1f kohm',rds)
-
+// Chapter 12_The junction field effect transistor
+//Caption_The MESFET-Channel length modulation
+//Ex_8//page 573
+Nd=3*10^15
+eps=8.85*10^-14*11.7
+L=10;
+e = 1.6*10^-19;
+ID1=4
+VDSsat=0  //assume
+VDS1=VDSsat+2
+VDS2=VDSsat+2.5
+
+delL2=10^4*(2*eps*(VDS2-VDSsat)/(e*Nd))^0.5   //change in length
+delL1=10^4*(2*eps*(VDS1-VDSsat)/(e*Nd))^0.5   //change in length
+//drain currents are
+ID22=ID1*(L/(L-0.5*delL2))
+ID11=ID1*(L/(L-0.5*delL1))
+rds=(VDS2-VDS1)/(ID22-ID11)
+printf('The small signal output resistance at the drain terminal due to channel length modulation effects is %1.1f kohm',rds)
\ No newline at end of file
diff --git a/284/CH13/EX13.4/ex4.sce b/284/CH13/EX13.4/ex4.sce
index c35409336..b63e40d14 100755
--- a/284/CH13/EX13.4/ex4.sce
+++ b/284/CH13/EX13.4/ex4.sce
@@ -1,7 +1,7 @@
-// Chapter 13_Optical Devices
-//Caption_Solar concentration
-//Ex_4//page 605
-JL==150*10^-3    //PHOTOCURRENT DENSITY
-Js=3.6*10^-11   //reverse saturation current density
-Voc=0.0259*log(1+JL/Js)
+// Chapter 13_Optical Devices
+//Caption_Solar concentration
+//Ex_4//page 605
+JL=150*10^-3    //PHOTOCURRENT DENSITY
+Js=3.6*10^-11   //reverse saturation current density
+Voc=0.0259*log(1+JL/Js)
 printf('Open circuit voltage when solar concentration is used is %1.3f V',Voc)
\ No newline at end of file
diff --git a/284/CH13/EX13.7/ex7.sce b/284/CH13/EX13.7/ex7.sce
index 6d3a97e1b..2909d12af 100755
--- a/284/CH13/EX13.7/ex7.sce
+++ b/284/CH13/EX13.7/ex7.sce
@@ -1,10 +1,11 @@
-// Chapter 13_Optical Devices
-//Caption_PIN Photodiode
-//Ex_7//page 618
-W=20*10^-4   //intrinsic region width
-phio=10^17    //photon flux
-alpha=10^3    //absorption coefficient
-GL1=alpha*phio   //generation rate of electron hole pair at the front region
-GL2=GL1*exp(-alpha*W)
-JL=1000*e*phio*(1-exp(-alpha*W))     //photocurrent density
-printf('The photocurrent density in PIN photodiode is %1.1f mA/cm^2  ',JL)
+// Chapter 13_Optical Devices
+//Caption_PIN Photodiode
+//Ex_7//page 618
+e = 1.6*10^-19;
+W=20*10^-4   //intrinsic region width
+phio=10^17    //photon flux
+alpha=10^3    //absorption coefficient
+GL1=alpha*phio   //generation rate of electron hole pair at the front region
+GL2=GL1*exp(-alpha*W)
+JL=1000*e*phio*(1-exp(-alpha*W))     //photocurrent density
+printf('The photocurrent density in PIN photodiode is %1.1f mA/cm^2  ',JL)
\ No newline at end of file
diff --git a/284/CH3/EX3.13/ex_13.sce b/284/CH3/EX3.13/ex_13.sce
index ea6191d36..c45fefecd 100755
--- a/284/CH3/EX3.13/ex_13.sce
+++ b/284/CH3/EX3.13/ex_13.sce
@@ -1,9 +1,12 @@
-// Chapter 3_The Semiconductor in Equilibrium
-//Caption_Position of Fermi Energy level
-//Ex_13//page 116
-T=300    //temperature in kelvin
-Na=10^16   // acceptor carrier impurity in per cm cube
-Ef=0.20   //Fermi energy is Ef eV below the conduction band edge
-Nc=2.8*(10^19)
-Nd=Na+(Nc*exp(-Ef/0.0259))
-printf('The require donor impurity concentration is %fd per cm cube',Nd)
\ No newline at end of file
+// Chapter 3_The Semiconductor in Equilibrium
+//Caption_Position of Fermi Energy level
+//Ex_14//page 121
+T=300   //temperature in kelvin
+Ef=0.20;
+kT=0.0259
+ni=1.5*(10^10)  //intrinsic carrier concentration
+Efa=3*kT    //Ef-Ea=3kT
+Eav=0.045
+Efif=Ef/2-(Eav)-(Efa)    //The position of fermi level at the maximum doping
+Na=exp(Efif/kT)*ni
+printf('Maximum doping is %3.2f d per cm cube',Na)
\ No newline at end of file
diff --git a/284/CH6/EX6.3/ex_3.sce b/284/CH6/EX6.3/ex_3.sce
index 0c63d7842..bd8ce1396 100755
--- a/284/CH6/EX6.3/ex_3.sce
+++ b/284/CH6/EX6.3/ex_3.sce
@@ -1,12 +1,14 @@
-// Chapter 6_The pn junction
-//Caption_Space charge width
-//Ex_3//page 227
-Na=10^16   //acceptor ion concentration
-T=300   //temperature in kelvin
-Nd=10^15
-ni=1.5*(10^10)   //intrinsic ion concentration
-Vr=5    //Reverse applied voltage
-Vbi=0.635
-V=Vr+Vbi
-W=(2*eps*V/e*(Na+Nd)/(Na*Nd))^0.5
+// Chapter 6_The pn junction
+//Caption_Space charge width
+//Ex_3//page 227
+eps=11.7*8.85*(10^-14);
+e=1.6*(10^-19);
+Na=10^16   //acceptor ion concentration
+T=300   //temperature in kelvin
+Nd=10^15
+ni=1.5*(10^10)   //intrinsic ion concentration
+Vr=5    //Reverse applied voltage
+Vbi=0.635
+V=Vr+Vbi
+W=(2*eps*V/e*(Na+Nd)/(Na*Nd))^0.5
 printf('The space charge width is %f cm ',W)
\ No newline at end of file
diff --git a/284/CH6/EX6.5/ex_5.sce b/284/CH6/EX6.5/ex_5.sce
index 474bb22d1..20dfa6b5d 100755
--- a/284/CH6/EX6.5/ex_5.sce
+++ b/284/CH6/EX6.5/ex_5.sce
@@ -1,14 +1,16 @@
-// Chapter 6_The pn junction
-//Caption_Junction capacitance
-//Ex_5//page 230
-Na=10^16   //acceptor ion concentration
-T=300   //temperature in kelvin
-Nd=10^15
-ni=1.5*(10^10)   //intrinsic ion concentration
-Vr=5    //Reverse applied voltage
-Vbi=0.635
-V=Vr+Vbi
-C=(e*eps*Na*Nd/(2*(V)*(Na+Nd)))^0.5
-A=10^-4   //Area of the pn junction
-Ca=A*C*10^12
+// Chapter 6_The pn junction
+//Caption_Junction capacitance
+//Ex_5//page 230
+eps=11.7*8.85*(10^-14);
+e=1.6*(10^-19);
+Na=10^16   //acceptor ion concentration
+T=300   //temperature in kelvin
+Nd=10^15
+ni=1.5*(10^10)   //intrinsic ion concentration
+Vr=5    //Reverse applied voltage
+Vbi=0.635
+V=Vr+Vbi
+C=(e*eps*Na*Nd/(2*(V)*(Na+Nd)))^0.5
+A=10^-4   //Area of the pn junction
+Ca=A*C*10^12
 printf('The junction capacitance for the given semiconductor is %1.3f pF',Ca)
\ No newline at end of file
diff --git a/284/CH7/EX7.2/ex_2.sce b/284/CH7/EX7.2/ex_2.sce
index 9ec93a934..715749372 100755
--- a/284/CH7/EX7.2/ex_2.sce
+++ b/284/CH7/EX7.2/ex_2.sce
@@ -1,13 +1,14 @@
-// Chapter 7_The pn junction Diode
-//Caption_pn Junction current
-//Ex_2//page 258
-Na=10^16    //acceptor impurity
-Nd=10^16    // donor impurity
-ni=1.5*10^10     //intrinsic concentration
-Dn=25
-Dp=10
-tau_po=5*10^-7
-tau_no=5*10^-7
-epsr=11.7
-Js=e*ni^2*((1/Na*(Dn/tau_no)^0.5)+(1/Nd)*(Dp/tau_po)^0.5)*10^9
-printf('Ideal reverse satureation current density is %f nA/cm',Js)
+// Chapter 7_The pn junction Diode
+//Caption_pn Junction current
+//Ex_2//page 258
+e = 1.6*10^-19;
+Na=10^16    //acceptor impurity
+Nd=10^16    // donor impurity
+ni=1.5*10^10     //intrinsic concentration
+Dn=25
+Dp=10
+tau_po=5*10^-7
+tau_no=5*10^-7
+epsr=11.7
+Js=e*ni^2*((1/Na*(Dn/tau_no)^0.5)+(1/Nd)*(Dp/tau_po)^0.5)*10^9
+printf('Ideal reverse saturation current density is %f nA/cm',Js)
\ No newline at end of file
diff --git a/284/CH8/EX8.1/ex_1.sce b/284/CH8/EX8.1/ex_1.sce
index a564c8681..2b4144341 100755
--- a/284/CH8/EX8.1/ex_1.sce
+++ b/284/CH8/EX8.1/ex_1.sce
@@ -1,13 +1,15 @@
-// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions
-//Caption_Shottky barrier diode
-//Ex_1//page 308
-T=300    //temperature in kelvin
-Nd=10^16    //donor impurity
-phi_m=4.55    //metal work function for tungsten
-xi=4.01      //electron affinity for silicon
-phi_bo=phi_m-xi
-phi_n=0.0259*log(2.8*10^19/Nd)
-Vbi=phi_bo-phi_n
-xn=(2*eps*Vbi/(e*Nd))^0.5     //space charge width at zero bias
-Emax=e*Nd*xn/eps    //maximum electric field
+// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions
+//Caption_Shottky barrier diode
+//Ex_1//page 308
+eps=13.1*8.85*10^-14;
+e = 1.6*10^-19;
+T=300    //temperature in kelvin
+Nd=10^16    //donor impurity
+phi_m=4.55    //metal work function for tungsten
+xi=4.01      //electron affinity for silicon
+phi_bo=phi_m-xi
+phi_n=0.0259*log(2.8*10^19/Nd)
+Vbi=phi_bo-phi_n
+xn=(2*eps*Vbi/(e*Nd))^0.5     //space charge width at zero bias
+Emax=e*Nd*xn/eps    //maximum electric field
 printf('Theoritical barrier height is %f V, built-in potential barrier is %f V and maximium electric field is %f V/cm', phi_bo,phi_n,Emax)
\ No newline at end of file
diff --git a/284/CH8/EX8.5/ex_5.sce b/284/CH8/EX8.5/ex_5.sce
index adf372723..01a4252f9 100755
--- a/284/CH8/EX8.5/ex_5.sce
+++ b/284/CH8/EX8.5/ex_5.sce
@@ -1,23 +1,24 @@
-// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions
-//Caption_Comparison of the schottky barrier diode and the pn junction diode
-//Ex_5/page 319
-e_phi_bn=0.67
-A=114     //effective richardson constant
-T=300
-Jst=A*T^2*exp(-e_phi_bn/0.0259)
-//if we neglect the barrier lowering effect, we have for the schottky barrier diode
-//for a pn junction
-Na=10^18
-Nd=10^16
-Dp=10
-Dn=25
-tau_po=10^-7
-tau_no=10^-7
-Lp=(Dp*tau_po)^0.5
-Ln=(Dn*tau_no)^0.5
-pno=2.25*10^4
-npo=2.25*10^2
-//the ideal reverse saturation current density of the pn junction diode can be determined as
-Js=e*Dn*npo/Ln+(e*Dp*pno/Lp)
-J=10^9*(Js+5.7*10^-13)
+// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions
+//Caption_Comparison of the schottky barrier diode and the pn junction diode
+//Ex_5/page 319
+e = 1.6*10^-19;
+e_phi_bn=0.67
+A=114     //effective richardson constant
+T=300
+Jst=A*T^2*exp(-e_phi_bn/0.0259)
+//if we neglect the barrier lowering effect, we have for the schottky barrier diode
+//for a pn junction
+Na=10^18
+Nd=10^16
+Dp=10
+Dn=25
+tau_po=10^-7
+tau_no=10^-7
+Lp=(Dp*tau_po)^0.5
+Ln=(Dn*tau_no)^0.5
+pno=2.25*10^4
+npo=2.25*10^2
+//the ideal reverse saturation current density of the pn junction diode can be determined as
+Js=e*Dn*npo/Ln+(e*Dp*pno/Lp)
+J=10^9*(Js+5.7*10^-13)
 printf('Reverse saturation current density for schottky baarier diode is %f A/cm^2 and for pn junction is %f nA/cm^2',Jst,J)
\ No newline at end of file
-- 
cgit