From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001
From: priyanka
Date: Wed, 24 Jun 2015 15:03:17 +0530
Subject: initial commit / add all books

---
 284/CH12/EX12.10/ex10.sce | 15 +++++++++++++++
 1 file changed, 15 insertions(+)
 create mode 100755 284/CH12/EX12.10/ex10.sce

(limited to '284/CH12/EX12.10/ex10.sce')

diff --git a/284/CH12/EX12.10/ex10.sce b/284/CH12/EX12.10/ex10.sce
new file mode 100755
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--- /dev/null
+++ b/284/CH12/EX12.10/ex10.sce
@@ -0,0 +1,15 @@
+// Chapter 12_The junction field effect transistor
+//Caption_High electron mobility transistor
+//Ex_10//page 585
+Nd=10^18
+d=20*10^-8
+dd=500*10^-8   //thickness
+phi_B=0.85
+q=1.6*10^-19
+VG=0
+epsn=12.2  //relative dielectric constant
+Vp2=q*Nd*dd^2/(2*epsn*8.85*10^-14)   //a parameter
+x=0.22    //x=del Ec/q
+Voff=phi_B-x-Vp2     //threshold voltage
+ns=(VG-Voff)*epsn*8.85*10^-14/(q*(dd+d+80*10^-8))
+printf('The two dimensional electron concentration is %1.2f cm^-2',ns)
\ No newline at end of file
-- 
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