From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001 From: priyanka Date: Wed, 24 Jun 2015 15:03:17 +0530 Subject: initial commit / add all books --- 181/CH1/EX1.27/example1_27.sce | 34 ++++++++++++++++++++++++++++++++++ 181/CH1/EX1.27/example1_27.txt | 6 ++++++ 2 files changed, 40 insertions(+) create mode 100755 181/CH1/EX1.27/example1_27.sce create mode 100755 181/CH1/EX1.27/example1_27.txt (limited to '181/CH1/EX1.27') diff --git a/181/CH1/EX1.27/example1_27.sce b/181/CH1/EX1.27/example1_27.sce new file mode 100755 index 000000000..d523d56d9 --- /dev/null +++ b/181/CH1/EX1.27/example1_27.sce @@ -0,0 +1,34 @@ +// Concentration of holes and electrons +// Basic Electronics +// By Debashis De +// First Edition, 2010 +// Dorling Kindersley Pvt. Ltd. India +// Example 1-27 in page 52 + +clear; clc; close; + +// Data given +sigma=100; // Conductivity of p-type germanium +e=1.6*10^-19; // Charge on an electron in eV +mu_p=1800; // Mobility of holes in cm^2/Vs +ni=2.5*10^13; // Number of intrinsic atoms in germanium +mu_n=1300; // Mobility of electrons in cm^2/Vs +sigma1=0.1; // Conductivity in n-type silicon in /ohm-cm +ni1=1.5*10^10; // Number of intrinsic atoms in silicon +P_p=3.47*10^17; // Constant of calculation + +// Calculation +printf("For Germanium:\n"); +p_0=sigma/(e*mu_p); +n_0=(ni^2)/P_p; +printf("(a)Concentration of holes is %0.2e cm^-3\n",p_0); +printf("(b)Concentration of electrons is %0.2e m^-3\n",n_0); +printf("For Silicon:\n"); +n_0=sigma1/(e*mu_n); +p_0=(ni1^2)/(4.81*10^14); +printf("(c)Concentration of electrons is %0.2e cm^-3\n",n_0); +printf("(d)Concentration of holes is %0.2e m^-3",p_0); + +// Result +// (a) For Ge,Hole conc. = 3.47*10^17 cm^-3, Electron conc. = 1.8*10^15 m^-3 +// (b) For Si,Hole conc. = 4.68*10^5 cm^-3, Electron conc. = 4.81*10^14 cm^-3 \ No newline at end of file diff --git a/181/CH1/EX1.27/example1_27.txt b/181/CH1/EX1.27/example1_27.txt new file mode 100755 index 000000000..e2994aa08 --- /dev/null +++ b/181/CH1/EX1.27/example1_27.txt @@ -0,0 +1,6 @@ + For Germanium: +(a)Concentration of holes is 3.47e+017 cm^-3 +(b)Concentration of electrons is 1.80e+009 m^-3 +For Silicon: +(c)Concentration of electrons is 4.81e+014 cm^-3 +(d)Concentration of holes is 4.68e+005 m^-3 \ No newline at end of file -- cgit