1 files changed, 35 insertions, 0 deletions
diff --git a/3866/CH2/EX2.12/Ex2_12.sce b/3866/CH2/EX2.12/Ex2_12.sce
new file mode 100644
index 000000000..d051356b8
--- /dev/null
+++ b/3866/CH2/EX2.12/Ex2_12.sce
@@ -0,0 +1,35 @@
+clear; close; clc;
+
+disp('a)');
+k=1.38*(10^(-23));//boltzmann constant
+t=300;//room temperature
+q=1.6*(10^(-19));
+Na=3*(10^17);//in cm^(-3) 
+na1=3*(10^23);//in m^(-3)
+Nd=10^20;//in cm^(-3)
+Ni=1.45*(10^10);
+esi=11.7*8.85*(10^(-12));
+FIb=(k*t*log((Na*Nd)/(Ni*Ni)))/q;
+Cjb=((esi*q*na1)/(2*FIb))^(0.5);
+disp(FIb,'Built in junction potential(in volts):');
+disp(Cjb,'capacitance per length(farad/(m^2)):');//answer vary due to round off error
+
+disp('b)');
+y=0.3;//in micrometer
+xi=0.05;//in micrometer
+w=0.4;//in micrometer
+Cjb=1.6;//in (fF/micrometer^2) from 2_12a
+FIb=1;//in volts from 2_12a
+Vj1=0; 
+Vj2=-1.2;
+Cj1=(Cjb*w*(y+xi));
+Cj2=(Cjb*w*(y+xi))/((1-(Vj2/FIb))^0.5);
+disp(Cj1,'junction capacitance for Vj=0(in fF)=');
+disp(Cj2,'junction capacitance for Vj=-1.2v(in fF)=');
+
+disp('c)');
+v2=0;
+v1=-1.2;//in volts
+Keq=(-2)*sqrt(FIb)*(sqrt(FIb-v2)-sqrt(FIb-v1))/(v2-v1);
+Cj=Keq*Cjb*w*(y+xi);
+disp(Cj,'junction capacitance(in fF)=');