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diff --git a/3428/CH19/EX12.19.6/Ex12_19_6.sce b/3428/CH19/EX12.19.6/Ex12_19_6.sce
index e2356d188..f5c0ddc98 100644
--- a/3428/CH19/EX12.19.6/Ex12_19_6.sce
+++ b/3428/CH19/EX12.19.6/Ex12_19_6.sce
@@ -1,10 +1,10 @@
//Section-12,Example-6,Page no.-SS.60
//To calculate the no. of charge carriers and the conductivty of the doped material.
clc;
-a=5.431*10^-8
-u_e=1900
-e=1.6*10^-19
-V=a^3
-N_D=(8/V)/10^6
+a=5.431*10^-8 //cm
+u_e=1900 //cm^2V^-1sec^-1
+e=1.6*10^-19 //coulombs
+V=a^3 //cm^3
+N_D=(8/V)/10^6 //cm^3
C_n=e*N_D*u_e
disp(C_n,'Conductivity of P-doped Si(N- type semiconductor)(ohm^-1cm^-1)')