diff options
Diffstat (limited to '339/CH6/EX6.4')
-rwxr-xr-x | 339/CH6/EX6.4/ex6_4.sce | 37 |
1 files changed, 20 insertions, 17 deletions
diff --git a/339/CH6/EX6.4/ex6_4.sce b/339/CH6/EX6.4/ex6_4.sce index 437073e4f..c0d37eaed 100755 --- a/339/CH6/EX6.4/ex6_4.sce +++ b/339/CH6/EX6.4/ex6_4.sce @@ -1,18 +1,21 @@ -//doping concentrations
-Nc=2.8*10^19;
-Nd=1*10^16;
-term=Nc/Nd;
-k=1.38*10^-23; //Boltzman's constant
-q=1.6*10^-19; //charge
-Vc=(k*T)*log(term)/q;
-Vm=5.1; //workfunction
-X=4.05; //affinity
-Vd=(Vm-X)-Vc; //Barrier Voltage
-Epsilon=11.9*8.854*10^-12;
-ds=sqrt((2*Epsilon*Vd)/(q*Nd));
-A=1*10^-4; //cross-sectional area
-Cj=(A*Epsilon)/(ds); //junction capacitance
-disp("Volts",Vc,"Conduction Band potential");
-disp("Volts",Vd,"Built in Barrier Voltage");
-disp("metre",ds,"Space Charge Width");
+clc +clear +T=300; +//doping concentrations +Nc=2.8*10^19; +Nd=1*10^16; +term=Nc/Nd; +k=1.38*10^-23; //Boltzman's constant +q=1.6*10^-19; //charge +Vc=(k*T)*log(term)/q; +Vm=5.1; //workfunction +X=4.05; //affinity +Vd=(Vm-X)-Vc; //Barrier Voltage +Epsilon=11.9*8.854*10^-12; +ds=sqrt((2*Epsilon*Vd)/(q*Nd)); +A=1*10^-4; //cross-sectional area +Cj=(A*Epsilon)/(ds); //junction capacitance +disp("Volts",Vc,"Conduction Band potential"); +disp("Volts",Vd,"Built in Barrier Voltage"); +disp("metre",ds,"Space Charge Width"); disp("Farads",Cj,"Junction Capacitance");
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