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-rwxr-xr-x25/CH11/EX11.10/11_10.sce33
1 files changed, 18 insertions, 15 deletions
diff --git a/25/CH11/EX11.10/11_10.sce b/25/CH11/EX11.10/11_10.sce
index 0a4a183e7..004b50055 100755
--- a/25/CH11/EX11.10/11_10.sce
+++ b/25/CH11/EX11.10/11_10.sce
@@ -1,16 +1,19 @@
-//example:11.10,page no.-637.
-// program to design a transistor oscillator at 4 GHZ using a GaAs FET in common gate configuration.
-s11=2.18*expm(%i*(-35)*%pi/180);
-s21=2.75*expm(%i*(96)*%pi/180);
-s12=1.26*expm(%i*(18)*%pi/180);
-s22=0.52*expm(%i*(155)*%pi/180);// all are s parameter that are applicable for transistor in common gate configuration with aseries inductor.
-delta=s12*s21-s11*s22;
-Ct=conj(s22-delta*conj(s11));
-Rt=abs((s12*s21)/(abs(s22)^2-abs(delta)^2))
-taot=0.59*expm(%i*(-104)*%pi/180);
-taoin=s11+(s12*s21*taot)/(1-s22*taot);
-[mag_taoin,theta_taoin]=polar(taoin)
-Zin=((1+taoin)/(1-taoin))*Zo;
-Zl=-(real(Zin)/3)-(%i*imag(Zin));
-disp([mag_taoin,theta_taoin])
+//example:11.10,page no.-637.
+// program to design a transistor oscillator at 4 GHZ using a GaAs FET in common gate configuration.
+clear
+clc
+Zo = 50.199554 - 0.0089893*%i;
+s11=2.18*expm(%i*(-35)*%pi/180);
+s21=2.75*expm(%i*(96)*%pi/180);
+s12=1.26*expm(%i*(18)*%pi/180);
+s22=0.52*expm(%i*(155)*%pi/180);// all are s parameter that are applicable for transistor in common gate configuration with aseries inductor.
+delta=s12*s21-s11*s22;
+Ct=conj(s22-delta*conj(s11));
+Rt=abs((s12*s21)/(abs(s22)^2-abs(delta)^2))
+taot=0.59*expm(%i*(-104)*%pi/180);
+taoin=s11+(s12*s21*taot)/(1-s22*taot);
+[mag_taoin,theta_taoin]=polar(taoin)
+Zin=((1+taoin)/(1-taoin))*Zo;
+Zl=-(real(Zin)/3)-(%i*imag(Zin));
+disp([mag_taoin,theta_taoin])
disp(Zl,'the load impedence will be = ') \ No newline at end of file