initial commit / add all books

8 files changed, 126 insertions, 0 deletions

diff --git a/2885/CH5/EX5.1/ex5_1.sce b/2885/CH5/EX5.1/ex5_1.sce
new file mode 100755
index 000000000..af004ab0d
--- /dev/null
+++ b/2885/CH5/EX5.1/ex5_1.sce
@@ -0,0 +1,12 @@
+//Calculate saturation voltage and saturation current

+clear;

+clc;

+//soltion

+//given

+Vp=-4//V          //pinch off voltage

+Idss=12*10^-3;//A      //drain to source current with gate shorted

+Vgs=-2;//V             //gate to source voltage

+Vds=Vgs-Vp;

+Id=Idss*(Vds/Vp)^2;

+printf("Saturation Voltage is %.0f V\n",Vds);

+printf("Saturation current is %.0f mA",Id*10^3);

diff --git a/2885/CH5/EX5.2/ex5_2.sce b/2885/CH5/EX5.2/ex5_2.sce
new file mode 100755
index 000000000..cffe4f06e
--- /dev/null
+++ b/2885/CH5/EX5.2/ex5_2.sce
@@ -0,0 +1,20 @@
+//Find the value of drain current

+clear;

+clc;

+//soltion

+//given

+Vgso=-5;//V          //gate to source cut off voltage

+Idss=20*10^-3;//A     //drain to source current with gate shorted

+

+//At vgs = -2 V

+vgs=-2;//V        input voltage

+id=Idss*(1-(vgs/Vgso))^2;          //Schockley's equation

+printf("Drain current is (At vgs = -2 V) %.1f mA\n",id*10^3);

+

+//At vgs = -4 V

+vgs=-4;//V        input voltage

+id=Idss*(1-(vgs/Vgso))^2;          //Schockley's equation

+printf("Drain current is (At vgs = -4 V) %.1f mA\n",id*10^3);

+

+//At vgs = -8 V

+printf("Drain current is 0 A (At vgs = -8 V) because gate is biased beyond cut off ");

diff --git a/2885/CH5/EX5.3/ex5_3.sce b/2885/CH5/EX5.3/ex5_3.sce
new file mode 100755
index 000000000..3f513c49f
--- /dev/null
+++ b/2885/CH5/EX5.3/ex5_3.sce
@@ -0,0 +1,14 @@
+//Calculate Vgs and Vds saturation

+clear;

+clc;

+//soltion

+//given

+Vp=5//V          //pinch off voltage

+Idss=-15*10^-3;//A      //drain to source current with gate shorted

+Id=-3*10^-3;//A         //saturation current

+Vgs=Vp*(1-sqrt(Id/Idss));

+Vds=Vgs-Vp;

+printf("The gate to source voltage (Vgs) is %.3f V\n",Vgs);

+printf("The saturation voltage is Vds(sat)= %.3f V",Vds);

+

+// THe value of Vgs = 2.115V and Vds= -2.885V in book because of the calculation error

diff --git a/2885/CH5/EX5.4/ex5_4.sce b/2885/CH5/EX5.4/ex5_4.sce
new file mode 100755
index 000000000..c41a12b5b
--- /dev/null
+++ b/2885/CH5/EX5.4/ex5_4.sce
@@ -0,0 +1,18 @@
+//Calculate drain current Id for N channel

+clear;

+clc;

+//soltion

+//given

+Vp=5//V          //pinch off voltage

+Idss=18*10^-3;//A     //drain to source current with gate shorted

+

+//For Vgs= - 3 V

+Vgs=-3;//V

+Id=Idss*(1-(Vgs/(-Vp)))^2;

+printf("The drain current Id(For Vgs= -3V) = %.2f mA\n",Id*10^3);

+

+//For Vgs= 2.5 V

+Vgs=2.5;//V

+Id=Idss*(1-(Vgs/(-Vp)))^2;

+printf("The drain current Id(For Vgs= 2.5V) = %.1f mA",Id*10^3);

+

diff --git a/2885/CH5/EX5.5/ex5_5.sce b/2885/CH5/EX5.5/ex5_5.sce
new file mode 100755
index 000000000..034c5d93e
--- /dev/null
+++ b/2885/CH5/EX5.5/ex5_5.sce
@@ -0,0 +1,17 @@
+//Calculate drain current Id for P channel

+clear;

+clc;

+//soltion

+//given

+Vp=-5//V          //pinch off voltage

+Idss=18*10^-3;//A     //drain to source current with gate shorted

+

+//For Vgs= -3V

+Vgs=-3;//V

+Id=Idss*(1-(Vgs/(-Vp)))^2;

+printf("The drain current Id (For Vgs= -3V) = %.2f mA\n",Id*10^3);

+

+//For Vgs= 2.5V

+Vgs=2.5;//V

+Id=Idss*(1-(Vgs/(-Vp)))^2;

+printf("The drain current Id (For Vgs= 2.5V) = %.1f mA",Id*10^3);

diff --git a/2885/CH5/EX5.6/ex5_6.sce b/2885/CH5/EX5.6/ex5_6.sce
new file mode 100755
index 000000000..759ef70a1
--- /dev/null
+++ b/2885/CH5/EX5.6/ex5_6.sce
@@ -0,0 +1,15 @@
+//Find the value of drain current

+clear;

+clc;

+//soltion

+//given

+Vt=2;//V      //threshold voltage

+K=0.25*10^-3;// A/V^2      //conductivity parameter

+Vgs=3;//V    //gate supply

+Vds=2;//V      //saturation voltage

+Vdsm=Vgs-Vt;        //minimum voltage required to pinch off

+

+// Vds > Vdsm therefore the device is in saturation region

+

+Id=K*(Vgs-Vt)^2;

+printf("The drain current is %.2f mA",Id*1000);

diff --git a/2885/CH5/EX5.7/ex5_7.sce b/2885/CH5/EX5.7/ex5_7.sce
new file mode 100755
index 000000000..f4716bda1
--- /dev/null
+++ b/2885/CH5/EX5.7/ex5_7.sce
@@ -0,0 +1,21 @@
+//Find the value of Id

+clear;

+clc;

+//soltion

+//given

+Vt=1.5;//V      //threshold voltage

+Id=2*10^-3;//A

+Vgs=3;//V    //gate supply

+Vds=5;//V      //saturation voltage

+Vdsm=Vgs-Vt;        //minimum voltage required to pinch off

+

+// Vds > Vdsm therefore the device is in saturation region

+

+// Calculating K

+K=Id/((Vgs-Vt)^2);       // A/V^2      //conductivity parameter

+

+//Calculating Id for Vgs= 5 V and Vds= 6 V

+Vgs=5;//V    //gate supply

+Vds=6;//V      //saturation voltage

+Id=K*((Vgs-Vt)^2);

+printf("The drain current is %.2f mA",Id*1000);

diff --git a/2885/CH5/EX5.8/ex5_8.sce b/2885/CH5/EX5.8/ex5_8.sce
new file mode 100755
index 000000000..b83f65c95
--- /dev/null
+++ b/2885/CH5/EX5.8/ex5_8.sce
@@ -0,0 +1,9 @@
+//Calculate the dynamic drain resistance

+clear;

+clc;

+//soltion

+//given

+gm=200*10^-6;//S          trans conductance

+u=80;//         amplification factor

+rd=u/gm;

+printf("The dynamic drain resistance is %.0f kΩ",rd/1000);