{ "metadata": { "name": "", "signature": "sha256:2422fd711b2fd56d40e4219a033361f9b209ac35916fbe15f9fd192288113f4c" }, "nbformat": 3, "nbformat_minor": 0, "worksheets": [ { "cells": [ { "cell_type": "heading", "level": 1, "metadata": {}, "source": [ "Chapter 9:Integrated Circuit Fabrication" ] }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ "Example 9.2,Page number 470" ] }, { "cell_type": "code", "collapsed": false, "input": [ "#Variable declaration\n", "t=1 #thickness(mil) \n", "e=1.6*10**-19 #charge on electron(C)\n", "Pp=10**17 #concentration of phosphorous(atoms/cm^3)\n", "Bn=5*10**16 #boron concentration(atoms/cm^3)\n", "un=.135 #mobility(m^2/Vs)\n", "\n", "#Calculations\n", "n=(Pp-Bn)*10**6 #net concentration(atoms/cm^3)\n", "g=e*un*n #conductivity()\n", "rho=10**6/(g*25) #resistivity(ohm mil)\n", "Rs=rho/t #sheet resistance(ohm mil^2)\n", "\n", "#Results\n", "print\"Sheet resistance is\",round(Rs),\"ohm(mil**2)\"" ], "language": "python", "metadata": {}, "outputs": [ { "output_type": "stream", "stream": "stdout", "text": [ "Sheet resistance is 37.0 ohm(mil**2)\n" ] } ], "prompt_number": 9 }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ "Example 9.3,Page number 471" ] }, { "cell_type": "code", "collapsed": false, "input": [ "#Variable declaration\n", "R=20*10**3 #resistance of resistor(ohms)\n", "w=25 #width(um)\n", "Rs=200 #sheet resistance(ohm/square)\n", "R1=5*10**3 #resistance(ohms)\n", "\n", "#Calculations\n", "#Part a\n", "l=(R*w)/Rs #length required to fabricate 20 kohms(um)\n", "\n", "#Part b\n", "L=25 #length of resistor of 5 k ohms(um)\n", "w1=(Rs*L)/R1 #width required to fabricate 5 kohms(um)\n", "#Results\n", "print\"length required to fabricate 20 kohms resistor is\",l,\"um\"\n", "print\"width required to fabricate 5 kohms resistor is\",w1,\"um\"" ], "language": "python", "metadata": {}, "outputs": [ { "output_type": "stream", "stream": "stdout", "text": [ "length required to fabricate 20 kohms resistor is 2500 um\n", "width required to fabricate 5 kohms resistor is 1 um\n" ] } ], "prompt_number": 2 }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ "Example 9.4,Page number 471" ] }, { "cell_type": "code", "collapsed": false, "input": [ "#Variable declaration\n", "C=0.4*10**-12 #capacitance(pF/um^2)\n", "A=10**-12 #area of film(m^2)\n", "d=400*10**-10 #thickness of SiO2(amstrong)\n", "Eo=8.849*10**-12 #absolute electrical permitivity of free space\n", "\n", "#Calculations\n", "Er=(C*d)/(Eo*A) #relative dielectric constant\n", "\n", "#Results\n", "print\"relative dielectric constant of SiO2 is\",round(Er),\"(Solution given in the textbook is incorrect)\"" ], "language": "python", "metadata": {}, "outputs": [ { "output_type": "stream", "stream": "stdout", "text": [ "relative dielectric constant of SiO2 is 1808.0 (Solution given in the textbook is incorrect)\n" ] } ], "prompt_number": 2 }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ "Example 9.5,Page number 471" ] }, { "cell_type": "code", "collapsed": false, "input": [ "#Variable declaration\n", "C=250*10**-12 #capacitance(pF)\n", "d=500*10**-10 #thickness of SiO2 layer(amstrong)\n", "Eo=8.849*10**-12 #absolute electrical permitivity of free space\n", "Er=3.5 #relative dielectric constant\n", "\n", "#Calculations\n", "A=(C*d)/(Eo*Er) #chip area(um^2)\n", "\n", "#Results\n", "print\"chip area needed for a 250 pF MOS capacitor\",round(A/1e-7,2),\"(um)^2(Solution given in the textbook is incorrect)\"" ], "language": "python", "metadata": {}, "outputs": [ { "output_type": "stream", "stream": "stdout", "text": [ "chip area needed for a 250 pF MOS capacitor 4.04 (um)^2(Solution given in the textbook is incorrect)\n" ] } ], "prompt_number": 8 } ], "metadata": {} } ] }