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diff --git a/sample_notebooks/ajinkyakhair/chapter2.ipynb b/sample_notebooks/ajinkyakhair/chapter2.ipynb new file mode 100755 index 00000000..8b221e49 --- /dev/null +++ b/sample_notebooks/ajinkyakhair/chapter2.ipynb @@ -0,0 +1,240 @@ +{ + "metadata": { + "celltoolbar": "Raw Cell Format", + "name": "", + "signature": "sha256:4fe36e3e0da1a77ee9793bbcdad9ed8d44455b05327e70b42ad389ca8fb3e239" + }, + "nbformat": 3, + "nbformat_minor": 0, + "worksheets": [ + { + "cells": [ + { + "cell_type": "heading", + "level": 1, + "metadata": {}, + "source": [ + "Chapter 2: Semiconductor Physics" + ] + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.1,Page number 2-47" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "ro=1.72*10**-8 #resistivity of Cu\n", + "s=1/ro #conductivity of Cu\n", + "n=10.41*10**28 #no of electron per unit volume\n", + "e=1.6*10**-19 #charge on electron\n", + "\n", + "u=s/(n*e)\n", + "print\"mobility of electron in Cu =\",round(u,4),\"m**2/volt-sec\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "mobility of electron in Cu = 0.0035 m**2/volt-sec\n" + ] + } + ], + "prompt_number": 2 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.2,Page number 2-47" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "m=63.5 #atomic weight\n", + "u=43.3 #mobility of electron\n", + "e=1.6*10**-19 #charge on electron\n", + "N=6.02*10**23 #Avogadro's number\n", + "d=8.96 #density\n", + "\n", + "Ad=N*d/m #Atomic density\n", + "n=1*Ad\n", + "\n", + "ro=1/(n*e*u)\n", + "\n", + "print\"Resistivity of Cu =\",\"{0:.3e}\".format(ro),\"ohm-cm\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "Resistivity of Cu = 1.699e-06 ohm-cm\n" + ] + } + ], + "prompt_number": 4 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.3,Page number 2-47" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "e=1.6*10**-19 #charge on electron\n", + "ne=2.5*10**19 #density of carriers\n", + "nh=ne #for intrinsic semiconductor\n", + "ue=0.39 #mobility of electron\n", + "uh=0.19 #mobility of hole\n", + "\n", + "s=ne*e*ue+nh*e*uh #conductivity of Ge\n", + "ro=1/s #resistivity of Ge\n", + "\n", + "print\"Resistivity of Ge =\",round(ro,4),\"ohm-m\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "Resistivity of Ge = 0.431 ohm-m\n" + ] + } + ], + "prompt_number": 6 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.6,Page number 2-49" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "c=5*10**28 #concentration of Si atoms\n", + "e=1.6*10**-19 #charge on electron\n", + "u=0.048 #mobility of hole\n", + "s=4.4*10**-4 #conductivity of Si\n", + "\n", + "#since millionth Si atom is replaced by an indium atom\n", + "\n", + "n=c*10**-6\n", + "sp=u*e*n #conductivity of resultant\n", + "\n", + "print\"conductivity =\",sp,\"mho/m\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "conductivity = 384.0 mho/m\n" + ] + } + ], + "prompt_number": 10 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.7,Page number 2-49" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "m=28.1 #atomic weight of Si\n", + "e=1.6*10**-19 #charge on electron\n", + "N=6.02*10**26 #Avogadro's number\n", + "d=2.4*10**3 #density of Si\n", + "p=0.25 #resistivity\n", + "\n", + "#no. of Si atom/m**3\n", + "Ad=N*d/m #Atomic density\n", + "\n", + "#impurity level is 0.01 ppm i.e. 1 atom in every 10**8 atoms of Si\n", + "n=Ad/10**8 #no of impurity atoms\n", + "\n", + "#since each impurity produce 1 hole\n", + "nh=n\n", + "print\"1) hole concentration =\",\"{0:.3e}\".format(n),\"holes/m**3\"\n", + "up=1/(e*p*nh)\n", + "print\"2) mobility =\",round(up,4),\"m**2/volt.sec\"\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "1) hole concentration = 5.142e+20 holes/m**3\n", + "2) mobility = 0.0486 m**2/volt.sec\n" + ] + } + ], + "prompt_number": 12 + }, + { + "cell_type": "code", + "collapsed": false, + "input": [], + "language": "python", + "metadata": {}, + "outputs": [] + } + ], + "metadata": {} + } + ] +}
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