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diff --git a/sample_notebooks/DurgasriInnamuri/Chapter_3_Semoconductor_Devices_Fundamentals.ipynb b/sample_notebooks/DurgasriInnamuri/Chapter_3_Semoconductor_Devices_Fundamentals.ipynb new file mode 100755 index 00000000..ade5b7fd --- /dev/null +++ b/sample_notebooks/DurgasriInnamuri/Chapter_3_Semoconductor_Devices_Fundamentals.ipynb @@ -0,0 +1,223 @@ +{ + "cells": [ + { + "cell_type": "markdown", + "metadata": {}, + "source": [ + "# Chapter 3 Semoconductor Devices Fundamentals" + ] + }, + { + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Exa 3.2 page no:35" + ] + }, + { + "cell_type": "code", + "execution_count": 1, + "metadata": { + "collapsed": false + }, + "outputs": [ + { + "name": "stdout", + "output_type": "stream", + "text": [ + "resistivity of the si doped with n−dopant is : \n", + "0.089 ohm−cm \n" + ] + } + ], + "source": [ + "def resistivity(u,n): #n:doped concentration =10**17 atoms/cubic cm, u: mobility of electrons =700square cm/v−sec .\n", + " q=1.6*10**-19 #q: charge\n", + " Res=1/(q*u*n)# since P is neglegible . \n", + " print \"resistivity of the si doped with n−dopant is : \"\n", + " print \"%0.3f ohm−cm \"%Res \n", + "resistivity(10**17,700)\n", + "# after executing calling resitivity ( u=700 and n =10ˆ17)i .e. , resistivity (10ˆ17 ,700) ;" + ] + }, + { + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Exa 3.3 page no:35" + ] + }, + { + "cell_type": "code", + "execution_count": 2, + "metadata": { + "collapsed": false + }, + "outputs": [ + { + "name": "stdout", + "output_type": "stream", + "text": [ + "resistivity of intrinsic Ge is : \n", + "2595245510.225 ohm−cm \n" + ] + } + ], + "source": [ + "def resistivity(un,np): # un: electron concentration , up: hole concentration\n", + " q=1.6*10**-19 #in coulumb \n", + " ni=2.5*10*13 # concentration in cmˆ−3 \n", + " Res=1/(q*ni*un*np) # since n=p=ni \n", + " print \"resistivity of intrinsic Ge is : \"\n", + " print \"%0.3f ohm−cm \"%Res \n", + "resistivity(3900,1900)" + ] + }, + { + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Exa 3.4 page no:37" + ] + }, + { + "cell_type": "code", + "execution_count": 3, + "metadata": { + "collapsed": false + }, + "outputs": [ + { + "name": "stdout", + "output_type": "stream", + "text": [ + "hole concentrartion at 300K is : \n", + "2250.000000 per cubic cm \n" + ] + } + ], + "source": [ + "def holeconcentration(ni,Nd): # Nd: donar concentration ; since , Nd>>ni , so Nd=n=10ˆ17 atoms/cmˆ3.\n", + " p=ni**2/Nd\n", + " print \"hole concentrartion at 300K is : \"\n", + " print \"%f per cubic cm \"%p\n", + "holeconcentration(1.5*10**10,10**17);" + ] + }, + { + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Exa 3.5 page no:39" + ] + }, + { + "cell_type": "code", + "execution_count": 4, + "metadata": { + "collapsed": false + }, + "outputs": [ + { + "name": "stdout", + "output_type": "stream", + "text": [ + "resistivity of the copper is : \n", + "2.29779411765e-08 ohm−meter\n" + ] + } + ], + "source": [ + "q=1.6*10**-19;\n", + "n=8.5*10**28;\n", + "u=3.2*10**-3;\n", + "p=1/(n*q*u);\n", + "print \"resistivity of the copper is : \"\n", + "print p,\" ohm−meter\"\n", + "# 2.298D−08 means 2.298∗10ˆ −8" + ] + }, + { + "cell_type": "markdown", + "metadata": {}, + "source": [ + "## Exa 3.6 page no:41" + ] + }, + { + "cell_type": "code", + "execution_count": 5, + "metadata": { + "collapsed": false + }, + "outputs": [ + { + "name": "stdout", + "output_type": "stream", + "text": [ + "Cu is: 0.0570814666846 pF\n", + "Ccs is: 0.282102806737 pF\n", + "gm is : 7.7519379845 mA/V\n", + "C1 is: 3.32558139535 pF\n", + "R1 is: 25.8 kilo ohm\n", + "R0 is 645.0 kilo Ohm \n", + "Ru is: 1290.0 Mega Ohm \n" + ] + } + ], + "source": [ + "from math import sqrt\n", + "\n", + "Cuo=0.25; # collector −base depletion region capacitance in pico Farad(pF) for zero bias\n", + "Ccso=1.5 ; # collector −substrate junction capacitance in pico Farad(pF) for zero bias\n", + "q=1.6*10**-19 ; # electron charge in coulomb\n", + "Ic=0.2 ; #collector current in ampere(A)\n", + "k=8.6*10**-5; #in eV/K, where 1eV=1.6∗10ˆ−19\n", + "T=300; # absolute temperature in kelvin (K)\n", + "Vcb=10 ; #forward bias on the junction in volt(v)\n", + "Vcs=15 ; # collector −substrate bias in volt (V)\n", + "Cje=1 ; #depletion region capacitance in pico Farad(pF)\n", + "Bo=200; #small signal current gain\n", + "Tf=0.3; #transit time in forward direction in nano seconds (nS)\n", + "n=2*10**-4; # proportionality constant for Ro and gm\n", + "Vo=0.55; # bias voltage in volt (V)\n", + "Cu=Cuo/sqrt(1+(Vcb/Vo));# collector −base capacitance\n", + "print \"Cu is: \",Cu,\" pF\"\n", + "Ccs=Ccso/sqrt(1+(Vcs/Vo)); # capacitance collector −substrate\n", + "print \"Ccs is: \",Ccs,\"pF\"\n", + "gm=q*Ic/(k*T*1.6*10**-19);# since k is in eV so converting it in Coulomb/Kelvin\n", + "print \"gm is :\",gm,\"mA/V\"# transconductance of the bipolar transistor here\n", + "Cb=Tf*gm;# diffusion capacitance in pico Farad(pF)\n", + "C1=Cb+Cje;#small signal capacitance of bipolar transistor\n", + "print \"C1 is: \",C1,\"pF\"\n", + "R1=Bo/gm;# small signal input resistance of bipolar transistor\n", + "print \"R1 is: \",R1,\" kilo ohm\"\n", + "Ro=1/(n*gm);#small signal output resistance\n", + "print \"R0 is \",Ro,\" kilo Ohm \"\n", + "Ru=10*Bo*Ro/10**3;# collector −base resistance\n", + "print \"Ru is: \",Ru,\"Mega Ohm \"" + ] + } + ], + "metadata": { + "kernelspec": { + "display_name": "Python 2", + "language": "python", + "name": "python2" + }, + "language_info": { + "codemirror_mode": { + "name": "ipython", + "version": 2 + }, + "file_extension": ".py", + "mimetype": "text/x-python", + "name": "python", + "nbconvert_exporter": "python", + "pygments_lexer": "ipython2", + "version": "2.7.10" + } + }, + "nbformat": 4, + "nbformat_minor": 0 +} |