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diff --git a/Electronic_Principles_/Chapter_2_New.ipynb b/Electronic_Principles_/Chapter_2_New.ipynb new file mode 100644 index 00000000..cf7eaae1 --- /dev/null +++ b/Electronic_Principles_/Chapter_2_New.ipynb @@ -0,0 +1,177 @@ +{
+ "metadata": {
+ "name": ""
+ },
+ "nbformat": 3,
+ "nbformat_minor": 0,
+ "worksheets": [
+ {
+ "cells": [
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "CHAPTER 2 SEMICONDUCTORS"
+ ]
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 2-5, Page 49"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Example 2.5.py\n",
+ "#A barrier potential of 0.7V at an ambient temperature of 25 deg C,\n",
+ "#Find arrier potential of a silicon diode when the junction temperature is 100 deg C. At 0 deg C.\n",
+ "\n",
+ "#Variable declaration\n",
+ "Tj=100 #junction temperature 1(C)\n",
+ "Vb=0.7 #Barrier potential(V)\n",
+ "Tamb=25 #Ambient temperature(C)\n",
+ "T1=0 #junction temperature 2(C)\n",
+ "\n",
+ "#Calculation\n",
+ "Vd=-0.002*(Tj-Tamb) #Change in barrier potential(V)\n",
+ "Vbn=Vb+Vd #Barrier potential(V)\n",
+ "Vd1=-0.002*(T1-Tamb) #Change in barrier potential(V)\n",
+ "Vb1n=Vb+Vd1 #Barrier potential(V)\n",
+ "\n",
+ "#Result\n",
+ "print 'Change in barrier potential = Vd =',Vd,'V'\n",
+ "print 'Brrier potential = Vbn =',Vbn,'V'\n",
+ "print 'For junction temperature 0 C'\n",
+ "print 'Change in barrier potential = Vd1 =',Vd1,'V'\n",
+ "print 'New barrier potential = Vb1n =',Vb1n,'V'"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "Change in barrier potential = Vd = -0.15 V\n",
+ "Brrier potential = Vbn = 0.55 V\n",
+ "For junction temperature 0 C\n",
+ "Change in barrier potential = Vd1 = 0.05 V\n",
+ "New barrier potential = Vb1n = 0.75 V\n"
+ ]
+ }
+ ],
+ "prompt_number": 2
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 2-6, Page 51"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Example 2.6.py\n",
+ "#A silicon diode has a saturation current of 5 nA at 25 deg C. What is the saturation current at 100 deg C?\n",
+ "\n",
+ "\n",
+ "#Variable declaration\n",
+ "T2=100 #Temperature(C)\n",
+ "T1=25 #Temperature(C)\n",
+ "Isat1=5 #Current(nA)\n",
+ "\n",
+ "#Calculation\n",
+ "Td=T2-T1 #Temperature change(C)\n",
+ "Is1=(2**7)*Isat1 #Current(nA)\n",
+ "Is2=(1.07**5)*Is1 #Current(nA)\n",
+ "\n",
+ "#Result\n",
+ "print 'Change in temperature = Td = T2-T1 =',Td,'C'\n",
+ "print 'For first 70 C change seven doublings are there.'\n",
+ "print 'Is1 = (2^7)*Isat1 =',Is1,'nA'\n",
+ "print 'For additional 5 C, 7% per C'\n",
+ "print 'Is2 = ',round(Is2,2),'nA'"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "Change in temperature = Td = T2-T1 = 75 C\n",
+ "For first 70 C change seven doublings are there.\n",
+ "Is1 = (2^7)*Isat1 = 640 nA\n",
+ "For additional 5 C, 7% per C\n",
+ "Is2 = 897.63 nA\n"
+ ]
+ }
+ ],
+ "prompt_number": 10
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 2-7, Page 52"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Example 2.7.py\n",
+ "#surface-leakage current is 2nA for a reverse voltage of 25 V, \n",
+ "#find surface leakage current for a reverse voltage of 35V.\n",
+ "\n",
+ "#Variable declaration\n",
+ "Isl=2*(10**-9) #surface leakage current(nA)\n",
+ "Vr=25 #Reverse voltage(V)\n",
+ "Vr1=35 #Reverse voltage(V)\n",
+ "\n",
+ "#Calculation\n",
+ "Rsl=Vr/Isl #surface leakage reistance(Ohm)\n",
+ "Isl1=(Vr1/Rsl)*(10**9) #surface leakage current(nA)\n",
+ "\n",
+ "#Result\n",
+ "print 'surface-leakage reistance Rsl = Vr/Isl =',Rsl*10**-6,'MOhm'\n",
+ "print 'for Vr1 = 35 V,'\n",
+ "print 'surface-leakage reistance Isl1 = Vr1/Rsl =',Isl1,'nA'"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "surface-leakage reistance Rsl = Vr/Isl = 12500.0 MOhm\n",
+ "for Vr1 = 35 V,\n",
+ "surface-leakage reistance Isl1 = Vr1/Rsl = 2.8 nA\n"
+ ]
+ }
+ ],
+ "prompt_number": 17
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [],
+ "language": "python",
+ "metadata": {},
+ "outputs": []
+ }
+ ],
+ "metadata": {}
+ }
+ ]
+}
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